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Semiconductor Device Manufacturing: Process > Formation Of Electrically Isolated Lateral Semiconductive Structure > Recessed Oxide By Localized Oxidation (i.e., Locos) > Dopant Addition

Dopant Addition

Dopant Addition patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/13/06 - 20060154441 - Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate
A method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate is provided. A patterned first dielectric layer is formed on a semiconductor substrate for being used as a first hard mask. A thermal oxidation process is performed to form field oxides on ...



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