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Semiconductor Device Manufacturing: Process > Formation Of Electrically Isolated Lateral Semiconductive Structure > Grooved And Refilled With Deposited Dielectric Material > Combined With Formation Of Recessed Oxide By Localized Oxidation > Recessed Oxide Laterally Extending From Groove Recessed Oxide Laterally Extending From GrooveRecessed Oxide Laterally Extending From Groove patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087523 - Recessed shallow trench isolation In some embodiments, a memory integrated circuit has different shallow trench isolation structures in the memory circuitry of the memory integrated circuit and the control circuitry of the memory integrated circuit. The isolation dielectric fills the trenches of the shallow trench isolation structures to different degrees. In some embodiments, a ... ### FreshPatents.com Support |