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Semiconductor Device Manufacturing: Process > Formation Of Electrically Isolated Lateral Semiconductive Structure > Total Dielectric Isolation > Bonding Of Plural Semiconductive Substrates Bonding Of Plural Semiconductive SubstratesBonding Of Plural Semiconductive Substrates patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087514 - Soi substrate with selective oxide layer thickness control A method for forming a SOI substrate device having multiple buried oxide regions comprising the steps of; forming a thin buried oxide layer in a silicon-containing substrate, forming a mask with openings therein on the substrate, implanting oxygen into the substrate through the openings in the mask, forming a buried ... 01/25/07 - 20070020873 - Method of manufacturing composite wafer structure The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, ... 01/25/07 - 20070020872 - Process and apparatus for producing single crystal Disclosed are a production apparatus and a production process in which a thick and high-quality single crystal film can be formed on both sides of a colored substrate. Both single crystal growth surfaces of a colored substrate which has been fixed through a substrate holder within a reactor are substantially ... 09/28/06 - 20060216904 - Method of room temperature covalent bonding A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer ... 03/02/06 - 20060046423 - Trench wall in the ground and method for the production thereof The invention relates to a method for producing a trench wall in the ground and which is penetrated by an obstacle, lateral trench wall recesses being sunk on either side of the obstacle and below the obstacle is produced a lower trench wall recess by laterally pivoting in a soil-removing ... 12/01/05 - 20050266653 - Substrate manufacturing method In a substrate manufacturing method of manufacturing a bonded substrate stack by boding the bonding surfaces of the first and second substrates, a bonding surface having a hydrophobic region and a hydrophilic region is formed by partially processing at least one of the bonding surfaces of the first and second ... ### FreshPatents.com Support |