REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Formation Of Electrically Isolated Lateral Semiconductive Structure > Total Dielectric Isolation Total Dielectric IsolationTotal Dielectric Isolation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/28/06 - 20060292818 - Method for making a semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer A method for making a semiconductor device may include forming an insulating layer on a substrate, and forming a semiconductor layer on the insulating layer on a side thereof opposite the substrate. The method may further include forming a superlattice on the semiconductor layer on a side thereof opposite the ... 08/31/06 - 20060194408 - Process and circuit for manufacturing electronic semiconductor devices in a soi substrate A process for manufacturing an electronic semiconductor device, wherein a SOI wafer is provided, formed by a bottom layer of semiconductor material, an insulating layer, and a top layer of semiconductor material, stacked on top of one another; alignment marks are formed in the top layer; an implanted buried region ... 12/29/05 - 20050287760 - Method for fabricating high aspect ratio mems device with integrated circuit on the same substrate using post-cmos process The invention discloses a novel flexible, modular fabrication method for integrated high aspect ratio single crystal silicon microstructures designed and manufactured in a post conventional CMOS process (Post-CMOS). The method involves the standard circuits formation, the electrical isolation trenched etching and refilling, backside etching, interconnection formation, and structure releasing. Further, ... 12/22/05 - 20050282349 - Method for forming device isolation film of semiconductor device A method for forming device isolation film of semiconductor device is provided, the method including forming a pad oxide film, a pad nitride film, and an oxide film for device isolation on a semiconductor substrate, etching a predetermined region of the oxide film for device isolation, the pad nitride film, ... 08/04/05 - 20050170604 - Method for forming a semiconductor device with local semiconductor-on-insulator (soi) A semiconductor on insulator transistor is formed beginning with a bulk silicon substrate. An active region is defined in the substrate and an oxygen-rich silicon layer that is monocrystalline is formed on a top surface of the active region. On this oxygen-rich silicon layer is grown an epitaxial layer of ... 06/23/05 - 20050136611 - Manufacturing device for buried insulating layer type single crystal silicon carbide substrate Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a ... ### FreshPatents.com Support |