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Semiconductor Device Manufacturing: Process > Making Passive Device (e.g., Resistor, Capacitor, Etc.) > Stacked Capacitor > Having Contacts Formed By Selective Growth Or Deposition Having Contacts Formed By Selective Growth Or DepositionHaving Contacts Formed By Selective Growth Or Deposition patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/02/06 - 20060246679 - Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an ... 07/27/06 - 20060166456 - Semiconductor device and manufacturing method thereof A semiconductor layer in which a primary part of a FinFET is formed, i.e., a fin has a shape which is long in a direction x and short in a direction y. A width of the fin in the direction y changes on three stages. First, in a channel area ... 02/23/06 - 20060040461 - Method of forming a capacitor The present invention relates to a method for fabricating a capacitor employing ALD-TiN as an upper electrode and being suitable for preventing a deterioration of a leakage current property which uses an ALD-TiN as an upper electrode. The method for fabricating the capacitor includes: forming a lower electrode on a ... 06/16/05 - 20050130385 - Method of manufacturing a capacitor having improved capacitance and method of manufacturing a semiconductor device including the capacitor A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication. ... ### FreshPatents.com Support |