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Semiconductor Device Manufacturing: Process > Making Passive Device (e.g., Resistor, Capacitor, Etc.) > Stacked Capacitor Stacked CapacitorStacked Capacitor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077721 - Semiconductor device and manufacturing method therefor A semiconductor device comprising a capacitive element which is provided above the semiconductor substrate and which has a capacitive insulation film held between an upper electrode and a lower electrode, a conductor for upper electrode which is connected to the upper electrode, a side-wall adsorbent member which covers a side ... 03/29/07 - 20070072385 - Electrical open/short contact alignment structure for active region vs. gate region An apparatus and method are disclosed for measuring alignment of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias or misalignment. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low ... 03/15/07 - 20070059895 - Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in ... 03/08/07 - 20070054462 - Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes ... 03/01/07 - 20070048964 - Three dimensional scaffold and method of fabricating the same A three dimensional scaffold having a three dimensional structure is easily fabricated by employing a lithography process used in a semiconductor manufacturing process. A method of fabricating the same is also disclosed have a conformational structure. In the method of fabricating a three dimensional scaffold having the conformational structure according ... 03/01/07 - 20070048963 - Method of manufacturing semiconductor device Provided is a method of manufacturing a semiconductor device including the steps of: forming a first insulating film on a silicon substrate; forming a capacitor in which a lower electrode, a capacitor dielectric film configured of ferroelectric material, and an upper electrode are laminated in this order on the first ... 03/01/07 - 20070048962 - Tan integrated circuit (ic) capacitor formation Formation of a capacitor as part of an integrated circuit (IC) fabrication process is disclosed. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a ... 02/08/07 - 20070032035 - Container capacitor structure and method of formation thereof Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available ... 02/01/07 - 20070026626 - Integrated decoupling capacitor process The present invention discloses a fabrication process for integrated high dielectric constant capacitors for circuit decoupling. The top electrode is protected against the re-deposition of material from the bottom electrode during the patterning process of the bottom electrode, thus provides better capacitor yield against the shortage of top and bottom ... 02/01/07 - 20070026625 - Method of fabricating metal-insulator-metal capacitor In one embodiment, a method of fabricating a MIM capacitor includes forming an interlayer insulating layer having a contact plug on a semiconductor substrate, forming an etch stop layer on the interlayer insulating layer, and forming a mold layer having an opening exposing the contact plug on the etch stop ... 02/01/07 - 20070026624 - Process of producing activated carbon for electrode of electric double layer capacitor A process for producing an activated carbon for an electrode of an electric double-layer capacitor, includes a step of subjecting a carbonized material to an alkali activating treatment, wherein the carbonized material has an average true specific gravity of 1.450 to 1.650 and a variation of the true specific gravities ... 01/18/07 - 20070015337 - Semiconductor device and method for fabricating the same A semiconductor device includes a lower electrode having a bend in its cross-section,FIG a capacitor dielectric film of a ferroelectric deposited on the top face of the lower electrode and an upper electrode deposited on the top face of the capacitor dielectric film. The upper electrode is deposited by chemical ... 01/18/07 - 20070015336 - Method of making a multi-electrode double layer capacitor having hermetic electrolyte seal A long life double layer capacitor and method of making the same including a case and a first terminal with an electrically insulating hermitic seal interposed between the first terminal and the case. A first current collector foil is electrically coupled to an interior portion of the first terminal and ... 01/11/07 - 20070010066 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device is disclosed, which comprises the steps of (i) forming a circuit element on a semiconductor substrate, (ii) forming a dielectric that covers the circuit element, (iii) forming a first electrode on the dielectric, (iv) forming a ferroelectric film on the first electrode, (v) ... 01/04/07 - 20070004166 - Method for fabricating capacitor of semiconductor device Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a ... 12/28/06 - 20060292817 - Methods of processing semiconductor structures and methods of forming capacitors for semiconductor devices using the same In a method of processing a semiconductor structure and a method of forming a capacitor for a semiconductor device using the same, a semiconductor structure may be cleaned using a cleaning solution having a surface tension lower than that of water. The semiconductor structure may be dried in an isopropyl ... 12/28/06 - 20060292816 - Semiconductor device and method for fabricating the same A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess and having a second recess, a capacitor insulating ... 12/14/06 - 20060281278 - Integrated thin-film capacitor with etch-stop layer, process of making same, and packages containing same A thin-film capacitor assembly includes a first metal bottom electrode, a dielectric layer, a second metal etch-stop layer, and a subsequent metal top electrode. The first metal bottom electrode is in contact with the dielectric layer. The second metal etch-stop layer is in contact with the dielectric layer. The subsequent ... 12/07/06 - 20060275997 - Method for forming capacitor in semiconductor device Upon a deep-hole capacitor fabrication, a hole is formed in an insulator layer, and then a film of a conductive material is formed on the insulator layer and on the whole inner surface of the hole. The film and the insulator layer are exposed to a chemical-mechanical polishing process to ... 12/07/06 - 20060275996 - Mounting device for a capacitor A mounting device for mounting a capacitor on a connector element includes a hollow body defining a continuous through-hole that axially penetrates the body for receiving and mounting the capacitor. The body has a lower region defining a lower through-hole portion with a dimension. The body further has a middle ... 12/07/06 - 20060275995 - Semiconductor integrated circuit device and design method thereof A semiconductor integrated circuit device which is formed on an area comprises a first storage node which is formed on a first area having a first conductive type of the area, the first storage node having a first level, a second storage node which is formed on a second area ... 11/23/06 - 20060263999 - Semiconductor capacitor structure and method to form same A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls ... 11/23/06 - 20060263998 - Semiconductor capacitor structure and method to form same A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls ... 11/23/06 - 20060263997 - Semiconductor capacitor structure and method to form same A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls ... 11/23/06 - 20060263996 - Semiconductor capacitor structure and method to form same A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls ... 11/23/06 - 20060263995 - Semiconductor capacitor structure and method to form same A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls ... 11/16/06 - 20060258114 - Semiconductor device and method of manufacturing the same There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the insulating film, etching the second conductive film and the dielectric film into a first pattern shape by using a first mask, ... 11/16/06 - 20060258113 - Capacitor structure A capacitor structure and method of forming it are described. In particular, a high-K dielectric oxide is provided as the capacitor dielectric. The high-K dielectric is deposited in a series of thin layers and oxidized in a series of oxidation steps, as opposed to a depositing a single thick layer. ... 11/16/06 - 20060258112 - Semiconductor device having a cylindrical capacitor A DRAM device has a stacked capacitor including a first capacitor section received in a thick insulation film and a second capacitor section overlying the first capacitor section. A portion of the bottom electrode in the second capacitor section has a thickness larger than the thickness of another portion of ... 11/16/06 - 20060258111 - Process for producing an integrated circuit comprising a capacitor An integrated circuit is produced to include interconnection levels each incorporating a metallization level covered with an insulating material. The integrated circuit includes at least one capacitor possessing at least one part lying within a single interconnection level. The capacitor is produced before the interconnection level is produced. The covering ... 11/09/06 - 20060252224 - Methods of forming pluralities of capacitors, and integrated circuitry A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is ... 11/09/06 - 20060252223 - Method for forming ferroelectric capacitor, ferroelectric capacitor and electronic device A method for forming a ferroelectric capacitor includes the steps of (a) forming a first conductive layer above a base substrate, (b) forming, on the first conductive layer, a ferroelectric layer containing a ferroelectric material having oxygen, (c) forming a second conductive layer on the ferroelectric layer, (d) forming a ... 11/02/06 - 20060246678 - Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on ... 11/02/06 - 20060246677 - Methods of forming spaced conductive regions, and methods of forming capacitor constructions The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The construction also includes openings extending through the first electrically conductive material and into the semiconductor substrate. A second electrically conductive material is formed within ... 10/19/06 - 20060234466 - Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and at least three high-k dielectric layers interposed between the lower electrode and the upper electrode. The at least three ... 10/19/06 - 20060234465 - Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors In one aspect, the invention includes a method of forming a material comprising tungsten and nitrogen, comprising: a) providing a substrate; b) depositing a layer comprising tungsten and nitrogen over the substrate; and c) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a ... 09/28/06 - 20060216901 - Metal-insulator-metal (mim) capacitor structure and methods of fabricating same A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer extending along a channel defined between a pair of legs that define portions of the MIM capacitor structure. Each of the legs ... 09/21/06 - 20060211212 - Capacitive element, semiconductor device, and method of manufacturing the capacitive element A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating ... 08/10/06 - 20060177988 - Semiconductor fabrication processes Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide ... 08/10/06 - 20060177987 - Methods for forming thin oxide layers on semiconductor wafers An oxide layer on a silicon wafer may be removed by applying a process chemical such as hydrofluoric acid to the wafer. This will typically remove substantially all of the existing oxide layer, leaving a bare silicon surface. A high quality self-terminating chemical oxide layer may then be grown on ... 07/13/06 - 20060154437 - Capacitor for semiconductor device and fabricating method thereof A capacitor for a semiconductor device includes a first inter metal dielectric layer is disposed on a substrate. A first electrode is disposed on the first inter metal dielectric layer. A second electrode partially overlaps the first electrode. A first dielectric layer is disposed between the first and second electrodes. ... 07/13/06 - 20060154436 - Metal-insulator-metal capacitor and a fabricating method thereof The present invention disclosed herein is a semiconductor capacitor and a method for fabricating the same. A semiconductor capacitor with multitiered metal oxide layers, including at least one metal oxide layer, wherein oxygen ions are implanted therein using a rapid thermal oxidation process in the presence of oxygen gars. Consequently, ... 07/13/06 - 20060154435 - Method of fabricating trench isolation for trench-capacitor dram devices A method of fabricating trench isolation for trench-capacitor DRAM devices. After the formation of deep trench capacitors, an isolation trench is etched into a substrate. The isolation trench is initially filled with a first insulating layer, which is then recessed into the isolation trench to a depth that is lower ... 07/06/06 - 20060148193 - Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium ... 07/06/06 - 20060148192 - Damascene mim capacitor structure with self-aligned oxidation fabrication process A self aligned MIM capacitor structure and method for forming the same, the method including forming a metal filled damascene having an exposed surface in a dielectric insulating layer; forming a metal precursor layer on the exposed surface; carrying out a process on the metal precursor layer selected from the ... 07/06/06 - 20060148191 - Self aligning electrode and method of making the same Electrodes are constructed with pressure-bonding techniques that simplify alignment of various electrode components during lamination. In an exemplary embodiment, a current collector is made from aluminum foil that has been roughed or pitted on both surfaces. The surfaces of the current collector can be further treated to enhance adhesion properties ... 06/29/06 - 20060141736 - Method for fabricating capacitor of semiconductor memory device using amorphous carbon A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the inter-layer insulation layer; forming a stack structure formed by stacking a first protective barrier layer and a sacrificial layer on the inter-layer ... 06/22/06 - 20060134880 - Methods of manufacturing a metal-insulator-metal capacitor Methods of manufacturing a metal-insulator-metal capacitor are provided. An illustrated method includes: forming a lower metal electrode layer pattern in a metal-insulator-metal capacitor region and a lower metal line layer pattern in a metal line region above an insulating layer above a semiconductor substrate; forming an intermetal insulating layer covering ... 06/08/06 - 20060121685 - Semiconductor device and method of fabricating the same A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H2 attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor performance. The position of a semiconductor substrate mounted on and secured to a substrate support ... 06/01/06 - 20060115954 - Methods of manufacturing a capacitor and a semiconductor device In methods of manufacturing a capacitor and a semiconductor device, a mold layer is formed on a substrate having a contact plug. The mold layer includes an opening exposing the contact plug. A conductive layer is formed on the contact plug, an inner sidewall of the opening and the mold ... 06/01/06 - 20060115953 - Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps of: forming a storage electrode on a semiconductor substrate; forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode; and ... 05/25/06 - 20060110889 - Method for fabricating a mim capacitor having increased capacitance density and related structure According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a layer of silicon nitride on the first interconnect layer. The layer of silicon nitride is deposited ... 05/18/06 - 20060105538 - Method for forming semiconductor device capable of preventing bunker defect Disclosed is a method for preventing a bunker defect generation on a lower portion of a cylinder type metal bottom electrode. The method includes the steps of: forming an etch stop layer on a bottom structure with a conductive region and an insulation region; forming a capacitor insulation layer on ... 05/18/06 - 20060105537 - Method for forming storage electrode of semiconductor device A method for forming a storage electrode of a semiconductor device is provided, the method including forming an oxide film on a lower insulating layer disposed on a semiconductor substrate, forming a hard mask silicide layer pattern defining a strode electrode region on the oxide film, subjecting the hard mask ... 05/11/06 - 20060099769 - Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a storage electrode consisting of TiN is formed on a semiconductor substrate. Then, a first HfO2 thin film, an HfxAlyOz ... 05/04/06 - 20060094199 - Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz thin films are deposited on a storage electrode to form an HfxAlyOz dielectric film and a plate electrode is ... 04/06/06 - 20060073670 - Method of manufacturing a semiconductor device In one embodiment, first and second multi-layer pattern structures are formed over first and second regions of a substrate, respectively. The first and second multi-layer pattern structures include first and second support layer patterns, respectively. The first and second multi-layer pattern structures define first and second openings, respectively. The first ... 03/30/06 - 20060068560 - Bst integration using thin buffer layer grown directly onto sio2/si substrate A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength ... 03/02/06 - 20060046421 - Method for manufacturing semiconductor device In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas. The ... 03/02/06 - 20060046420 - Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on ... 02/02/06 - 20060024907 - Method of forming a capacitor A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0.20 micron. The container openings respectively have at least three peripheral corner areas which are each rounded. The container forming layer is plasma etched through ... 02/02/06 - 20060024906 - Semiconductor device and a method of manufacturing the same The present invention provides a semiconductor device, having: a semiconductor substrate; a first electrode formed over the semiconductor substrate; a first insulation film covering the first electrode and having an aperture for exposing a part of the first electrode; a first conductive film formed on a part of the first ... 02/02/06 - 20060024905 - Metal capacitor stacked with a mos capacitor to provide increased capacitance density An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive ... 01/05/06 - 20060003539 - Method for fabricating capacitor in semiconductor memory device Disclosed is a method for fabricating a capacitor in a semiconductor memory device. The method includes the steps of: sequentially forming a first insulation layer and a first etch stop layer on a substrate; forming a plurality of contact holes by etching the first insulation layer and the first etch ... 01/05/06 - 20060003538 - Method of forming capacitor of semiconductor device Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: forming a bottom electrode on a semiconductor substrate with a ... 12/22/05 - 20050282348 - Method of manufacturing thin film capacitor A first electrode layer having protrusions and depressions on its surface are formed on a lower insulating layer on a semiconductor substrate, and a sacrificial layer is formed on the first electrode layer with a material that is reflowable when heated. After reflowing the sacrificial layer by heat treatment, the ... 12/08/05 - 20050272219 - Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and the dielectric ... 11/24/05 - 20050260823 - Methods and apparatus for forming rhodium-containing layers A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect ... 11/17/05 - 20050255664 - Method of forming a metal-insulator-metal capacitor A method of forming a capacitor includes sequentially forming a barrier layer, a second dielectric layer, and a conductive layer on a surface of a first dielectric layer and conductors in the first dielectric layer, performing an etching process to remove portions of the barrier layer, the second dielectric layer, ... 11/17/05 - 20050255663 - Semiconductor device and method of manufacturing the same A semiconductor device according to the present invention comprises a capacitor including a lower electrode, a dielectric material, and an upper electrode. The device further comprises a first protective film which contacts the upper electrode to constitute a columnar structure of films formed by a sputtering process and a second ... 10/06/05 - 20050221575 - Novel method to fabricate high reliable metal capacitor within copper back-end process A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A ... 09/15/05 - 20050202647 - Process for creating metal-insulator-metal devices A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create ... 09/15/05 - 20050202646 - Method for edge sealing barrier films An edge-sealed, encapsulated environmentally sensitive device. The device includes at least one initial barrier stack, an environmentally sensitive device, and at least one additional barrier stack. The barrier stacks include at least one decoupling layer and at least one barrier layer. The environmentally sensitive device is sealed between the at ... 09/01/05 - 20050191820 - Method for making improved bottom electrodes for metal-insulator-metal crown capacitors A method for making crown-shaped capacitors with uniform capacitance from the center to the edge of the DRAM device is achieved. The uniform capacitance is achieved using a two-step planarization process or a uniformly deposited CVD sacrificial layer. After forming a first conducting layer in openings in an insulator, a ... 09/01/05 - 20050191819 - Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions are described. In one embodiment, a capacitor storage node is formed having an uppermost surface and an overlying insulative material over the uppermost surface. Subsequently, a capacitor dielectric functioning region is formed discrete from ... 08/25/05 - 20050186752 - Capacitor and its manufacturing method, and semiconductor device A method is provided for manufacturing a capacitor including the steps of forming a lower electrode on a substrate, forming an insulation film formed of a perovskite type metal oxide on the lower electrode, and forming an upper electrode on the insulation film. The step of forming the insulation film ... 08/11/05 - 20050176212 - Mems device and method of forming mems device A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS ... 08/04/05 - 20050170602 - Semiconductor device, method for manufacturing the same, circuit substrate, electro-optical apparatus, and electronic equipment A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a ... 08/04/05 - 20050170601 - Methods of forming dielectric structures and capacitors A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at ... 08/04/05 - 20050170600 - Three-dimensional semiconductor package, and spacer chip used therein In a three-dimensional semiconductor package, a logic-circuit chip has a plurality of top electrode terminals formed on a top surface thereof, and a spacer chip is mounted on the logic-circuit chip. The spacer chip has a plurality of bottom electrode terminals formed on a bottom surface thereof, and a plurality ... 08/04/05 - 20050170599 - Multiple stacked capacitors formed within an opening with thick capacitor dielectric For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes within the opening. The stacked capacitors are formed with the lower electrodes within the opening by depositing a capacitor dielectric ... 08/04/05 - 20050170598 - Silicided amorphous polysilicon - metal capacitor A silicided amorphous polysilicon-metal capacitor is formed using a standard process except that the exposed surface of the polycrystalline silicon is transformed into amorphous polysilicon before the silicidation of the polysilicon layer to form the bottom plate of the capacitive element. Transforming the polycrystalline silicon to amorphous polysilicon at the ... 07/14/05 - 20050153517 - Modifying u-shaped window spacers to receive internal blinds or other hardware Devices and methods are employed to convert an open, U-shaped flex-type window spacer to provide a surface for mounting an interior blind or other hardware. Such existing spacers have a generally U-shaped cross section and a groove with a width facing into a sealed cavity between panes of glass and ... 06/09/05 - 20050124132 - Self-aligned mim capacitor process for embedded dram A semiconductor device includes a group of capacitors and a trench. Each capacitor includes a first conductive material layer, a dielectric layer, and a second conductive material layer. The dielectric layer is located between the first and second conductive material layers. The first conductive material layer coats an inside surface ... 06/02/05 - 20050118780 - High k artificial lattices for capacitor applications to use in cu or al beol An improved and new process of fabricating high dielectric constant MIM capacitors. These high dielectric constant MIM capacitor met all of the stringent requirements needed for both for both RF and analog circuit applications. For the high dielectric constant MIM capacitor, the metal is comprised of copper electrodes in a ... 06/02/05 - 20050118779 - Method for fabricating semiconductor device A method for fabricating a semiconductor device capable of preventing an electric short between lower electrodes caused by leaning lower electrodes, or lifted lower electrodes and of securing a sufficient capacitance of a capacitor by increasing an effective capacitor area. The method includes the steps of: preparing a semi-finished semiconductor ... 06/02/05 - 20050118778 - Metal-insulator-metal (mim) capacitor and fabrication method for making the same A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. ... ### FreshPatents.com Support |