REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Making Passive Device (e.g., Resistor, Capacitor, Etc.) > Planar Capacitor Planar CapacitorPlanar Capacitor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/08/07 - 20070032034 - Method for manufacturing semiconductor storage device First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride ... 01/11/07 - 20070010065 - Method of making a capacitive substrate for use as part of a larger circuitized substrate, method of making said circuitized substrate and method of making an information handling system including said circuitized substrate A method of forming a capacitive substrate in which at least one capacitive dielectric layer of material is screen or ink jet printed onto a conductor and the substrate is thereafter processed further, including the addition of thru-holes to couple selected elements within the substrate to form at least two ... 01/11/07 - 20070010064 - Method of making a capacitive substrate using photoimageable dielectric for use as part of a larger circuitized substrate, method of making said circuitized substrate and method of making an information handling system including said circuitized substrate A method of forming a capacitive substrate in which at least one capacitive dielectric layer of material is screen or ink jet printed onto a conductor and the substrate is thereafter processed further, including the addition of thru-holes to couple selected elements within the substrate to form at least two ... 01/04/07 - 20070004165 - Embedded thin layer capacitor, layered structure, and fabrication method of the same The present invention relates to a thin layer capacitor including first and second metal electrode layers and a dielectric layer of BiZnNb-based amorphous metal oxide having a dielectric constant of at least 15, interposed between the metal layers, and a layered structure having the same. The layered structure includes a ... 01/04/07 - 20070004164 - Capacitor in semiconductor device and method of manufacturing the same The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formation of an alumina (Al2O3) film as ... 12/28/06 - 20060292815 - Mim capacitor in a semiconductor device and method therefor A MIM capacitor is formed over one or more metal interconnect layers in a semiconductor device. The capacitor has a lower plate electrode and an upper plate electrode. An insulator is formed between the plate electrodes. Prior to forming the first plate electrode a first insulating layer is deposited over ... 11/09/06 - 20060252222 - Method for fabricating a semiconductor component and semiconductor component In a method for fabricating a semiconductor component, a semiconductor substrate comprising a first surface is provided and a shaping matrix is applied to the first surface. The shaping matrix comprises at least one continuous depression arranged in such a way that contact regions in a region of the first ... 10/05/06 - 20060223276 - Mim capacitor structure and fabricating method thereof A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor opening is formed on the first dielectric layer, ... 08/17/06 - 20060183291 - Methods of forming capacitor structures The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in ... 07/13/06 - 20060154434 - Method of making an internal capacitive substrate for use in a circuitized substrate and method of making said circuitized substrate A method of forming a capacitive substrate in which first and second conductors are formed opposite a dielectric, with one of these electrically coupled to a thru-hole connection. Each functions as an electrode for the resulting capacitor. The substrate is then adapted for being incorporated within a larger structure to ... 07/13/06 - 20060154433 - Semiconductor device having mim element A semiconductor device having: a semiconductor substrate; a plurality of semiconductor elements formed in the semiconductor substrate; a metal wiring made of a first metal layer and formed above the semiconductor substrate; a lower electrode made of the first metal layer and formed above the semiconductor substrate; a dielectric film ... 06/29/06 - 20060141735 - Method for forming a mim capacitor in a semiconductor device In a method of forming a metal-insulator-metal (MIM) capacitor in a semiconductor device, after forming a capacitor insulation layer on a lower metal layer of the MIM capacitor, an upper electrode is formed by ion implantation into the capacitor insulation layer and silicidation, without a typical reactive ion etching process. ... 06/29/06 - 20060141734 - Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposition; forming an uneven surface in the polysilicon layer by etching ... 06/29/06 - 20060141733 - Capacitors having a horizontally folded dielectric layer and methods for manufacturing the same Capacitors having a horizontally folded dielectric layer and methods of manufacturing is the same are provided. An example method for manufacturing a capacitor includes forming a first insulating layer pattern above a substrate, forming a first silicon epitaxial growth layer above a region of the silicon substrate exposed by the ... 06/22/06 - 20060134879 - Methods of manufacturing a metal-insulator-metal capacitor Methods of manufacturing a metal-insulator-metal capacitor are provided. An illustrated method includes: forming a lower metal electrode layer pattern for a metal-insulator-metal capacitor and a lower metal line layer pattern for a metal line on a first insulating layer on a semiconductor substrate; forming a second insulating layer covering the ... 06/22/06 - 20060134878 - Method of fabricating metal-insulator-metal capacitor A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a semiconductor substrate having a region where the metal-insulator-metal capacitor is formed; forming an insulating film on the substrate; forming a sacrificial insulating film on the insulating film; forming a mask pattern having a plurality of openings on the sacrificial ... 06/15/06 - 20060128109 - Method of manufacturing a metal-insulator-metal capacitor The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory ... 04/13/06 - 20060079066 - Semiconductor device and method for fabricating the same A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the ... 04/13/06 - 20060079065 - Capacitor having reaction preventing layer and methods of forming the same The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of metal oxide or metal nitride is formed on the lower electrode. A nitridation process is performed to ... 03/23/06 - 20060063346 - Method of forming a layer and method of forming a capacitor of a semiconductor device having the same In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a reactant is provided onto the substrate to form a preliminary layer. Atoms in the preliminary layer are partially removed from the preliminary layer using plasma formed from an ... 02/02/06 - 20060024904 - Methods of forming capacitors A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0.20 micron. The container openings respectively have at least three peripheral corner areas which are each rounded. The container forming layer is plasma etched through ... 02/02/06 - 20060024903 - Methods of forming capacitors A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with ... 01/26/06 - 20060019461 - Methods of forming capacitors This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen comprising material on the first capacitor electrode material. The dielectric ... 01/26/06 - 20060019460 - Method of manufacturing a metal- insulator-metal capacitor The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory ... 01/19/06 - 20060014357 - Structure and method of making an enhanced surface area capacitor A method of making a capacitor structure having an enhanced plate surface area is provided. In such method, a mandrel is provided which has a major surface having an array of features including at least one of: a plurality of first features protruding upward or a plurality of second features ... 01/19/06 - 20060014356 - Metal-insulator-metal capacitor and method of fabricating same A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insultaing layer, a dielectric layer formed in the first opening, a conductive material deposited in the first and second ... 12/29/05 - 20050287758 - Method of fabricating capacitor in semiconductor device and semiconductor device using the same A method of fabricating a capacitor in a semiconductor device is provided. The method includes steps of depositing a metal layer for forming a lower electrode on a semiconductor substrate; forming, using an oxidation rate differential, an uneven structure in correspondence with a grain boundary of the metal layer; forming ... 09/22/05 - 20050208728 - Semiconductor component having an integrated capactiance structure and method for producing the same A semiconductor component has an insulating layer which is formed on a semiconductor substrate and in which a capacitance structure (K) is formed. The capacitance structure (K) has at least two metallization planes (1 to 7) which are arranged parallel to one another and are each connected to an electrical ... 07/28/05 - 20050164465 - Vertical capacitor apparatus, systems, and methods An apparatus and system, as well as fabrication methods therefor, may include a plurality of vertically-oriented plates separated by dielectric layers, wherein the vertically-oriented plates include a plurality of terminals coupled to a bottom side of the plates. ... 07/14/05 - 20050153516 - Method for etching upper metal of capacitator A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film of the capacitor includes the steps of forming a lower metal film, a lower ... ### FreshPatents.com Support |