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Semiconductor Device Manufacturing: Process > Making Passive Device (e.g., Resistor, Capacitor, Etc.) > Trench Capacitor Trench CapacitorTrench Capacitor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054461 - Trench capacitor and method for manufacturing the same A structure of a trench capacitor and method for manufacturing the same. The method includes providing a substrate having a defined memory area and logic area, and performing an STI process to form at least one STI region on the memory area of the substrate and at least one STI ... 03/01/07 - 20070048961 - Semiconductor device and fabricating method thereof A semiconductor device and fabricating method thereof are provided. In the fabricating method, two trenches are formed in the substrate and, then the first dielectric layers is formed on the sidewalls of the trenches and a source/drain layer is formed in each trench. A second dielectric layer is formed on ... 02/08/07 - 20070032033 - Connecting structure and method for manufacturing the same A connecting structure connects a storage electrode of a trench capacitor and a selection transistor that are at least partially formed in a semiconductor substrate. The connecting structure includes a portion of an intermediate layer disposed adjacent to a surface of the storage electrode, and an electrically conducting material disposed ... 02/08/07 - 20070032032 - Connecting structure and method for manufacturing the same A method for manufacturing a surface strap connection between a trench capacitor and a selection transistor includes providing a masking material on a surface of a semiconductor substrate in areas where no trench capacitors have been formed. An undoped semiconductor layer having vertical and horizontal areas is applied. An oblique ... 12/28/06 - 20060292814 - Methods of forming integrated circuitry In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spacing layer is formed to be laterally thicker ... 12/07/06 - 20060275994 - Thin film transistor, liquid crystal display and manufacturing method thereof The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact ... 11/30/06 - 20060270177 - Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device. In such a method, a mold insulating layer is formed on an insulating interlayer provided with a storage node plug, and the mold insulating layer is etched to form a hole through which the storage node plug is ... 11/30/06 - 20060270176 - Method for forming a semiconductor device A method for forming a semiconductor device. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a ... 11/09/06 - 20060252221 - Methods of forming hafnium-containing materials The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to ... 11/09/06 - 20060252220 - Method for controlling the top width of a trench A method for controlling the top width of a trench. A conductive layer is formed on the trench over the substrate, forming an interlayer over a part thereof, above the conductive layer. A sacrifice layer is formed on the trench sidewall above the interlayer, and the interlayer is removed to ... 11/09/06 - 20060252219 - Method of manufacturing a superjunction device A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etched through the oxide layer forming mesas. The at least one ... 11/02/06 - 20060246676 - Semiconductor device and method of manufacturing the same An isolation insulation film is formed in an isolation trench in an upper portion of a silicon substrate. The isolation insulation film has an opening by which inner walls and bottom of the isolation trench are exposed. A lower diffusion layer serving as a lower electrode of capacitors of DRAM ... 10/19/06 - 20060234464 - Method for fabricating an integrated circuit comprising a three-dimensional capacitor A capacitor fabricated, within an integrated circuit, has at least two capacitive trenches extending within a dielectric material. A metal layer is produced which is embedded in the dielectric material. To form the capacitor, the dielectric material is etched, with etching stopped at the metal layer so as to form ... 10/19/06 - 20060234463 - Method for fabricating an electrical component An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the ... 09/21/06 - 20060211211 - Methods of forming pluralities of capacitors The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes comprise outer lateral sidewalls. The plurality of capacitor electrodes is supported at ... 08/24/06 - 20060189090 - Method for fabricating a metal-insulator-metal capacitor A method for fabricating a capacitor is disclosed. First, a dielectric layer is disposed on a semiconductor substrate. Next, at least one dual damascene opening and at least one capacitor opening are formed in the dielectric layer. Next, a first conductive layer is disposed on the surface of the dielectric ... 06/29/06 - 20060141731 - Method for forming shallow trench isolation in semiconductor device A method for forming shallow trench isolation in a semiconductor device. The method includes forming a pad oxide and a pad nitride on a semiconductor substrate in successive order, forming a trench in the substrate by etching the pad nitride, the pad oxide and the substrate, removing a portion of ... 06/01/06 - 20060115952 - Method for forming multilayer electrode capacitor A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connected to each other, and so ... 05/18/06 - 20060105536 - Trench capacitor with hybrid surface orientation substrate Methods of forming a deep trench capacitor memory device and logic devices on a single chip with hybrid surface orientation. The methods allow for fabrication of a system-on-chip (SoC) with enhanced performance including n-type complementary metal oxide semiconductor (CMOS) device SOI arrays and logic transistors on (100) surface orientation silicon, ... 04/13/06 - 20060079064 - Fabrication method for a trench capacitor having an insulation collar which on one side is electrically connected to a substrate via a buried contact, in particular for a semiconductor memory cell, and corresponding trench capacitor The present invention provides a fabrication method for a trench capacitor having an insulation collar (10; 10a, 10b) in a substrate (1), which on one side is electrically connected to the substrate (1) via a buried contact (15a, 15b), comprising the steps of: providing a trench (5) in the substrate ... 03/16/06 - 20060057814 - Fabricating a memory cell arrangement A method is described for fabricating a DRAM memory cell, which includes a trench capacitor and a select transistor. After the capacitor trench has been etched and optionally the first capacitor electrode has been produced, the trench is filled with a dummy filling. After the gate electrode and the first ... 03/02/06 - 20060046419 - Double-sided container capacitors using a sacrificial layer Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer ... 02/09/06 - 20060030116 - Methods of fabricating integrated circuit capacitors using a dry etching process A method of fabricating an integrated circuit capacitor includes forming a first metal layer on a conductive plug in an interlayer insulating layer on a substrate. At least a portion of the first metal layer is silicided to form a metal silicide layer and a remaining first metal layer on ... 01/05/06 - 20060003537 - Methods for forming capacitor structures The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid ... 01/05/06 - 20060003536 - Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell The present invention provides a method for fabricating a trench capacitor with an insulation collar (10) in a substrate (1), which is electrically connected to the substrate (1) on one side via a buried contact, having the steps of: providing a trench (5) in the substrate (1) using a hard ... 12/08/05 - 20050272218 - Method of forming metal lower electrode of a capacitor and method of selectively etching a metal layer for the same A method of forming a cylindrical lower electrode of a capacitor in which metal is used as a lower electrode of a capacitor. A metal capping layer is used in order to protect the inner walls of the cylindrical metal lower electrode. A sacrificial insulating layer is patterned to form ... 12/08/05 - 20050272217 - Self-aligned metal electrode to eliminate native oxide effect for metal insulator semiconductor (mis) capacitor A method of forming a capacitor comprising the following steps. An inchoate capacitor is formed on a substrate within a capacitor area whereby portions of the substrate separate the inchoate capacitor from isolating shallow trench isolation (STI) structures. STIs. A first dielectric layer is formed over the structure. The first ... 11/03/05 - 20050245040 - Method for forming deep trench capacitor with liquid phase deposition oxide as collar oxide A method for forming a deep trench capacitor mainly utilizes a liquid phase deposition (LPD) oxide to form a collar oxide layer in the trench, followed by forming a conductive layer serving as an upper electrode of the deep trench capacitor, thereby avoiding collar oxide residue in the conductive layer ... 10/20/05 - 20050233538 - Integrated dynamic memory cell and method for fabricating it The present invention provides a method for fabricating a semiconductor structure having the steps of: providing a semiconductor substrate (1) made of silicon with a first hard mask layer (10; 10′) made of silicon oxide and an overlying second hard mask layer (15; 15′) made of silicon; providing a masking ... 10/06/05 - 20050221574 - Method for fabricating semiconductor device The present invention relates to a method for fabricating a semiconductor device with a capacitor by performing a plasma blanket etch-back process without employing a supplemental layer for isolating lower electrodes. The method includes the steps of: forming an insulation layer with a plurality of openings on a substrate to ... 10/06/05 - 20050221573 - Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is ... 09/22/05 - 20050208727 - Method of etching bottle trench and fabricating capacitor with same A method for forming a bottle trench. First, a substrate covered by a photoresist layer is rotated to a specific angle prior to performance of lithography, thereby forming a rectangular opening in the photoresist layer and exposing the substrate, in which edges of the rectangular opening are substantially parallel to ... 09/15/05 - 20050202645 - Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a substrate. Contact holes through which portions of the etch stop layer are exposed above plugs of the insulating ... 08/18/05 - 20050181573 - Thin-film capacitor device, mounting module for the same, and method for fabricating the same The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. ... 08/11/05 - 20050176211 - Semiconductor memory device, semiconductor device, and method for production thereof Disclosed are a semiconductor memory device, a semiconductor device, and a method for production thereof. The semiconductor memory device and semiconductor device do not need for a distance for alignment of lithography to make the contact hole with lithography to form the gate electrode. Hence the resulting devices have a ... 08/11/05 - 20050176210 - Fabrication of lean-free stacked capacitors For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support ... 07/28/05 - 20050164464 - Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition On a substrate surface, which has been patterned in the form of a relief, of a substrate, typically of a semiconductor wafer, a deposition process is used to provide a covering layer on process surfaces which are vertical or inclined with respect to the substrate surface. The covering layer is ... 07/21/05 - 20050158961 - Trench capacitor with buried strap A trench capacitor with improved strap is disclosed. The strap is located above the top surface of the capacitor. The top surface of the trench capacitor, which is formed by the top surfaces of the collar and storage plate, is planar. By locating the strap on a planar surface, the ... 06/30/05 - 20050142794 - Semiconductor device and method for fabricating the same A method creates semiconductor device in which a storage dielectric film and a storage electrode included in the capacitor is transferred from an inactive region of a semiconductor substrate to the active region thereof, i.e., into a device isolating trench such that the capacitor is prevented from unnecessarily occupying an ... 06/02/05 - 20050118777 - Trench capacitor structure and process for applying a covering layer and a mask for trench etching processes in semiconductor substrates A stress relief layer between a single-crystal semiconductor substrate and a deposited silicon nitride layer or pad nitride is formed from thermally produced silicon nitride. The stress relief layer made from thermally produced silicon nitride replaces a silicon dioxide layer or pad oxide which is customary at this location for ... 06/02/05 - 20050118776 - Method for fabricating a deep trench capacitor This invention pertains to a method for making a trench capacitor of DRAM devices. A single-sided spacer is situated on the sidewall of a recess at the top of the trench capacitor prior to the third polysilicon deposition and recess etching process. The single-sided spacer is formed on the second ... 06/02/05 - 20050118775 - Method for fabricating trench capacitors for integrated semiconductor memories In a method for fabricating trench capacitors, in particular for memory cells having at least one selection transistor for integrated semiconductor memories, a trench for the trench capacitor is formed. The trench has a lower trench region, in which the capacitor is disposed, and an upper trench region, in which ... ### FreshPatents.com Support |