|
FREE patent keyword monitoring and additional FREE benefits. |
|
|
Semiconductor Device Manufacturing: Process > Making Passive Device (e.g., Resistor, Capacitor, Etc.) > Resistor > Deposited Thin Film Resistor Deposited Thin Film ResistorDeposited Thin Film Resistor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/27/06 - 20060088974 - Method of affecting rram characteristics by doping pcmo thin films A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer. ... 10/13/05 - 20050227449 - Method for manufacturing self-compensating resistors within an integrated circuit A method for manufacturing a self-compensating resistor within an integrated circuit is disclosed. The self-compensating resistor includes a first resistor and a second resistor. The first resistor having a first resistance value is initially formed, and then the second resistor having a second resistance value is subsequently formed. The second ... 08/25/05 - 20050186751 - Method and structure for controlling surface properties of dielectric layers in a thin film component for improved trimming A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise ... 06/16/05 - 20050130384 - Method for manufacturing resistor of a semiconductor device The present invention discloses a method for manufacturing a resistor of a semiconductor device. In the manufacture of a resistor made of polysilicon, a polysilicon film of a fine grain structure is formed on the top of a semiconductor substrate at a temperature of more than 700° C., or a ... 06/16/05 - 20050130383 - Silicide resistor in beol layer of semiconductor device and method A suicide resistor for inclusion in a BEOL layer, and a method of forming the same that provides few additional manufacturing steps. The method allows formation of a passive resistor during BEOL processing without high temperature anneals that would damage other BEOL wiring structures. In particular, the method includes forming ... ### FreshPatents.com Support |