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Semiconductor Device Manufacturing: Process > Making Passive Device (e.g., Resistor, Capacitor, Etc.) Making Passive Device (e.g., Resistor, Capacitor, Etc.)Making Passive Device (e.g., Resistor, Capacitor, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087512 - Substrate embedded with passive device A method for manufacturing a substrate embedded with a passive device, comprising the steps of (a) molding the passive device and (b) mounting the molded passive device in a cavity formed on the substrate, is disclosed. The substrate embedded with a passive device and the manufacturing method thereof in accordance ... 02/15/07 - 20070037358 - Apparatus for etching a glass substrate An apparatus for etching a glass substrate includes a container for receiving an etching solution and at least two rollers disposed in the container. The at least two rollers may face with each other. The glass substrate is inserted between the at least two rollers, and the glass substrate is ... 02/08/07 - 20070032031 - Method for conducting electric activation of electric double layer capacitors An object of the present invention is to provide a method for conducting electric activation of an electric double layer capacitor, the method making it possible to increase the electrostatic capacitance and to decrease the internal resistance. The method is for conducting electric activation of an electric double layer capacitor ... 02/08/07 - 20070032030 - Method for high performance inductor fabrication using a triple damascene process with copper beol A method of forming a high performance inductor comprises providing a substrate; forming a plurality of wiring levels over the substrate, wherein each of the wiring levels comprise a dielectric layer; forming a first trench having a first depth in a first dielectric layer on a first wiring level; forming ... 02/01/07 - 20070026623 - Method for producing electrochemical capacitor electrode A method is provided for optimizing the physical characteristics of a coating solution for a polarizable electrode layer formed on a collector. A first step is carried out to prepare a coating solution that includes porous particles, a fluorine-based binder, a good solvent that dissolves said fluorine-based binder, and a ... 02/01/07 - 20070026622 - Method for producing solid electrolytic capacitor The invention provides a method for producing a solid electrolytic capacitor reliable with good LC value after mounting, wherein a solid electrolytic capacitor element comprises an anode body composed of a material containing at least one selected from a group consisting of an earth-acid metal, an alloy comprising an earth-acid ... 01/25/07 - 20070020869 - Method for manufacturing capacitor for semiconductor device Disclosed is a method for manufacturing a capacitor in a semiconductor device. A method consistent with the present invention includes forming a lower electrode on a semiconductor substrate; forming a first interlevel dielectric layer on an entire surface of the semiconductor substrate, covering the lower electrode; selectively removing the first ... 01/18/07 - 20070015335 - Production method for antenna and production device for antenna The free-space-wiring (3) is fabricated using a CVD process by irradiating a beam based on three-dimensional positional data as well as an irradiation position, an irradiation direction and irradiation time of the beam prestored in a computer-controlled drawing device (9) to utilize a beam excitation reaction. ... 01/11/07 - 20070010063 - Method for manufacturing capacitor A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least ... 12/28/06 - 20060292813 - Electronic component and method for manufacturing the same Electrode layers (1, 2) are arranged on both sides of a dielectric layer (3) facing each other so as to configure a capacitor. Lead electrodes (4, 5) are formed in the electrode layers (1, 2). A penetrating electrode (6) that is insulated from the electrode layers (1, 2) is formed. ... 12/28/06 - 20060292812 - Integrated circuit devices including insulating support layers and related methods and structures An integrated circuit device may include a substrate, a plurality of storage electrode landing pads on the substrate, and a plurality of storage electrodes. Each of the plurality of storage electrodes may be on a portion of a respective one of the plurality of storage electrode landing pads. In addition, ... 12/28/06 - 20060292811 - Method for forming a capacitor in a semiconductor and a capacitor using the same Disclosed is a capacitor and method for forming a capacitor in a semiconductor. The method includes the steps of: (a forming a lower electrode pattern on a silicon semiconductor substrate; (b etching a portion of the lower electrode pattern to a predetermined depth to form a step in the lower ... 12/28/06 - 20060292810 - Method of manufacturing a capacitor In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound ... 12/21/06 - 20060286761 - Wet electrolytic capacitors A wet electrolytic capacitor that includes an anode, cathode, and a liquid electrolyte disposed therebetween is provided. The cathode contains a metal oxide coating, such as NbO2, in conjunction with other optional coatings to impart improved properties to the capacitor. ... 12/21/06 - 20060286760 - Electrode for an electrical component, component with the electrode, and manufacturing method for the electrode and the component An electrical component, which contains an electrode with an electrically conductive body having a dielectric surface. An amorphous layer comprising SiO2, having a specific surface area of approximately 50 to 500 m2/g, is arranged on the body. An electrically conductive coating is arranged on the amorphous layer. A solid electrolyte ... 11/30/06 - 20060270175 - Method for manufacturing antenna and method for manufacturing semiconductor device The present invention provides an antenna with low resistance and a semiconductor device having an antenna whose communication distance is improved. A fluid containing conductive particles is applied over an object. After curing the fluid containing the conductive particles, the fluid is irradiated with a laser to form an antenna. ... 11/09/06 - 20060252218 - Method for fabricating a mim capacitor high-k dielectric for increased capacitance density and related structure According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a high-k dielectric layer comprising AlNX (aluminum nitride) on the first interconnect layer. The method further includes ... 11/02/06 - 20060246675 - Methods of forming capacitor constructions comprising perovskite-type dielectric materials The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The ... 11/02/06 - 20060246674 - Passive element chip and manufacturing method thereof, and highly integrated module and manufacturing method thereof A passive element chip permits a reduced size and a higher packaging density to be achieved. The passive element chip has a substrate, a plurality of passive elements formed by metal wires on the substrate, and electrodes for electrically connecting the plurality of passive elements to an external source. The ... 09/14/06 - 20060205170 - Methods of forming self-healing metal-insulator-metal (mim) structures and related devices Methods of forming metal-insulator-metal structures may include providing a first conductive electrode on a substrate, forming a dielectric layer on the first conductive electrode, and forming a second conductive electrode on the dielectric layer so that the dielectric layer is between the first and second conductive electrodes. In addition, a ... 08/31/06 - 20060194402 - Chip resistor The invention relates to a method of making a chip resistor using a material substrate for which are set a plurality of first cutting lines extending in a first direction and a plurality of second cutting lines extending in a second direction perpendicular to the first direction. The method includes ... 08/24/06 - 20060189089 - Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over ... 08/03/06 - 20060172504 - Fabrication process for increased capacitance in an embedded dram memory An embedded memory system includes an array of dynamic random access memory (DRAM) cells, which are isolated with deep trench isolation, and logic transistors, which are isolated with shallow trench isolation. Each DRAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a ... 07/27/06 - 20060166454 - Low tolerance polysilicon resistor for low temperature silicide processing Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS) processing utilizing low temperature silicidation are provided. In some embodiments, the Si-containing layer is implanted with a high dose of ions prior to activation. ... 07/20/06 - 20060160319 - Method of fabricating a capacitor by using a metallic deposit in an interconnection dielectric layer of an integrated circuit A manufacturing process for a capacitor in an interconnection layer includes the following stages: Deposit of a first metallic layer (21); Deposit of a first insulator layer (31) on the first metallic layer (21); Deposit of a second metallic layer (41) on the first insulator layer (31); Formation of an ... 06/22/06 - 20060134875 - Method of forming storage node of capacitor A method of forming a storage node of a capacitor includes defining a cell region and a peripheral circuit region in a semiconductor substrate. An interlayer insulating layer is formed on the semiconductor substrate of the cell region and the peripheral circuit region. Buried contact plugs are formed to penetrate ... 06/15/06 - 20060128108 - Method for forming a titanium nitride layer and method for forming a lower electrode of a mim capacitor using the titanium nitride layer A method is provided for forming a titanium nitride layer in a metal-insulator-metal (MIM) capacitor. The deposition of a titanium nitride layer is carried out by means of an MOCVD method using a metallo-organic material as a source gas, followed by a rapid thermal process (RTP) at a high temperature. ... 06/01/06 - 20060115951 - Capacitor having an anodic metal oxide substrate A structure and method including an anodic metal oxide substrate used to form a capacitor are described herein. ... 06/01/06 - 20060115950 - Methods of fabricating trench type capacitors including protective layers for electrodes and capacitors so formed A method of forming a capacitor can include forming a protective layer on a metal layer in a trench in an insulating layer and outside thereof. A surface of the protective layer and the metal layer beneath can be planarized using a chemical mechanical polishing (CMP) process to expose a ... 05/11/06 - 20060099768 - Method of manufacturing a capacitor A method of manufacturing a stack capacitance type capacitor is provided, which prevents the problem that the capacitor cannot be formed because a lower electrode collapses with the external wall thereof exposed in forming the lower electrode of the capacitor in a deep hole formed in silicon oxide, and removing ... 04/27/06 - 20060088972 - Electrode for electrolytic capacitor, electrolytic capacitor, and manufacturing method therefor An electrode for electrolytic capacitors having a large capacitance and having excellent tan δ, heat resistance, humidity resistance and stability. An electrolytic capacitor using the electrode. An electrode obtained by attaching a compound having a siloxane bond onto the surface of an electrode body comprising a valve-acting metal having formed ... 04/27/06 - 20060088971 - Integrated inductor and method of fabrication An inductor structure comprised of a magnetic section and a single turn solenoid. The single turn solenoid to contain within a portion of the magnetic section and circumscribed by the magnetic section. ... 04/20/06 - 20060084237 - Solid electrolytic capacitor and method of manufacturing the same A solid electrolytic capacitor using a conductive polymer compound as a solid electrolyte includes an anode body, a dielectric oxide coating formed on a surface of the anode body, a first conductive polymer compound layer formed on a portion of the dielectric oxide coating, a silane coupling agent treatment layer ... 04/20/06 - 20060084236 - Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement A plasma-enhanced chemical vapor deposition process for depositing relatively high dielectric constant silicon nitride or oxynitride to form an MIM capacitor is described. The flow rate ratios for the silicon nitride layer are: silane-to-ammonia between 1:20 and 6:5 and silane-to-nitrogen flow between 1:40 and 3:5. A pressure in the process ... 04/06/06 - 20060073668 - Production method for electric double-layer capacitor A method of manufacturing electric double layer capacitors is disclosed. The method assumes a model in which solute is dissolved in solvent before preparing electrolyte, and estimates a withstanding voltage through a simulation. The electrolyte, of which withstanding voltage is expected to exceed a target value, is selectively prepared. The ... 03/09/06 - 20060051928 - Reaction vessel for producing capacitor element, production method for capacitor element, capacitor element and capacitor The present invention relates to a reaction vessel for producing a capacitor element, which is used for forming a semiconductor layer by means of energization on two or more electric conductors each having formed on the surface thereof a dielectric layer simultaneously, by immersing the electric conductors into an electrolyte ... 03/02/06 - 20060046417 - Metal foil for capacitor, solid electrolytic capactor using the foil and production methods of the foil and the capacitor A metal foil for capacitor element is produced through a process comprising steps of etching and then electrochemically forming a metal foil after making cut lines each in a shape of a capacitor element with at least a part of a portion predetermined to be an anode-leading-out-part left uncut. The ... 02/23/06 - 20060040457 - Methods of forming low leakage currents metal-insulator-metal (mim) capacitors and related mim capacitors Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower dielectric layer. The lower dielectric layer may be formed of dielectrics having larger energy band gap than that of ... 02/09/06 - 20060030115 - Integrated circuit devices including passive device shielding structures and methods of forming the same Integrated circuit devices include a semiconductor substrate and a flux line generating passive electronic element on the semiconductor substrate. A dummy gate structure is arranged on the semiconductor substrate in a region below the passive electronic element. The dummy gate includes a plurality of segments, each segment including a first ... 02/02/06 - 20060024900 - Interposer including at least one passive element at least partially defined by a recess formed therein, method of manufacture, system including same, and wafer-scale interposer An interposer for assembly with a semiconductor die and methods of manufacture are disclosed. The interposer may include at least one passive element at least partially defined by at least one recess formed in at least one dielectric layer of the interposer. The at least one recess may have dimensions ... 02/02/06 - 20060024899 - Metal insulator metal (mim) capacitor fabrication with sidewall spacers and aluminum cap (alcap) top electrode A method (10) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A sidewall spacer (156) is formed against an edge (137) of a layer of bottom electrode/copper diffusion barrier material (136), an ... 12/29/05 - 20050287755 - Capacitor assemblies A method for fabricating a capacitor arrangement which includes at least three electrodes is described. The capacitor arrangement is fabricated using a number of lithography methods that is smaller than the number of electrodes. A capacitor arrangement extending over more than two or more interlayers between metallization layers has a ... 12/08/05 - 20050272216 - Method of making a semiconductor device, and semiconductor device made thereby A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, ... 12/01/05 - 20050266650 - Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate ... 09/29/05 - 20050215023 - Electrochemical fabrication process for forming multilayer multimaterial microprobe structures Some embodiments of the invention are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that partially coats the surface of the probe. Other embodiments are directed to the electrochemical fabrication of microprobes which are formed from a core material and a ... 08/11/05 - 20050176209 - Embedded passive components The present invention embeds passive components within a multilayer substrate used for mounting integrated circuits and other electronic components to form an electronic module or circuit board. During construction of the multilayer substrate, passive components are attached to an inside surface of a metallic foil layer. The inside surface of ... 07/14/05 - 20050153515 - Resistor and method for fabricating the same An inexpensive fine resistor which do not require dimensional classifications of discrete substrates, eliminating a process of replacing a mask according to a dimensional ranking of each discrete substrate as in the prior art. The resistor includes discrete substrate made into pieces by dividing an insulated substrate sheet along a ... 07/07/05 - 20050148150 - memory element and its method of formation A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, ... 06/30/05 - 20050142793 - Method of manufactuing inductor in semiconductor device The present invention related to a method of manufacturing an inductor in a semiconductor device. A wire for an inductor is thickly formed by performing at least two damascene process in the same pattern of different patterns, thus reducing resistance and obtain a good Q (Quality) factor. Therefore, the present ... 06/23/05 - 20050136609 - Capacitor having an anodic metal oxide substrate In one embodiment, a structure and method including an anodic metal oxide substrate used to form a capacitor are described herein. ... 06/23/05 - 20050136608 - Capacitor having an anodic metal oxide substrate A structure and method including an anodic metal oxide substrate used to form a capacitor are described herein. ... 06/09/05 - 20050124131 - Method of forming an inductor with continuous metal deposition A method is described to fabricate RF inductor devices on a silicon substrate. Low-k or other dielectric material is deposited and patterned to form inductor lower plate trenches. Trenches are lined with barrier film such as TaN, filled with copper, and excess metal planarized using chemical mechanical polishing (CMP). Second ... 06/02/05 - 20050118773 - Method of producing an integrated capacitor and a memory field A capacitor for an integrated circuit with microstructure has a first and a second electrode separated by a dielectric layer. The dielectric layer is produced during the structuring of the first electrodes by an etching process. The dielectric layer comprises a polymer structure which is formed during the etching process, ... ### FreshPatents.com Support |