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Semiconductor Device Manufacturing: Process > Voltage Variable Capacitance Device Manufacture (e.g., Varactor, Etc.) Voltage Variable Capacitance Device Manufacture (e.g., Varactor, Etc.)Voltage Variable Capacitance Device Manufacture (e.g., Varactor, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072384 - Plastically deformable irreversible storage medium and method of producing one such medium The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localised ... 02/09/06 - 20060030114 - Method for forming junction varactor and apparatus thereof A method for forming a junction varactor and apparatus thereof are disclosed. The method includes: forming at least one deep N-well in a P-type substrate; forming a P-well in the deep N-well; forming at least one n+ region in the P-well; and performing a contact process to couple the n+ ... 11/03/05 - 20050245038 - Novel varactors for cmos and bicmos technologies Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a substrate having a collector region of a first conductivity type atop a ... 10/27/05 - 20050239260 - Compensated linearity voltage-control-capacitor device by standard cmos process Apparatus and method of providing a CMOS varactor device having improved linearity. At least two differential varactor elements are connected in parallel. Each of the differential elements includes first, second and third doped regions in a well. A first gate controls the first and second regions and a second gate ... 10/06/05 - 20050221571 - Dual metal schottky diode An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a ... 08/18/05 - 20050181572 - Method for acoustically isolating an acoustic resonator from a substrate A method for acoustically isolating an acoustic resonator comprises: providing a substrate; forming a porous region in the substrate; forming the acoustic resonator on the porous region; and removing the porous region from the substrate. The removing forms a cavity that separates a portion of the acoustic resonator from the ... 07/07/05 - 20050148149 - Method of manufacturing variable capacitance diode and variable capacitance diode In a method of manufacturing a variable capacitance diode according to the present invention, a mask is formed on a semiconductor substrate of a first conductive type having a low impurity concentration, a semiconductor region of the first conductive type having an intermediate impurity concentration is formed on the semiconductor ... ### FreshPatents.com Support |