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Semiconductor Device Manufacturing: Process > Forming Bipolar Transistor By Formation Or Alteration Of Semiconductive Active Regions > Self-aligned > Dopant Implantation Or Diffusion > Simultaneous Introduction Of Plural Dopants > Plural Doping Steps > Through Same Mask Opening

Through Same Mask Opening

Through Same Mask Opening patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

02/15/07 - 20070037357 - Method for removing photoresist using a thermal bake in the presence of hydrogen and a semiconductor device manufactured using the same
The present invention provides a method for removing photoresist, and a method for manufacturing a semiconductor device. The method for removing photoresist, without limitation, may include subjecting a photoresist layer (210) located over a substrate (110) to a thermal bake (410) in the presence of hydrogen, and then removing the ...

09/21/06 - 20060211210 - Material for selective deposition and etching
A method of selectively growing silicon carbide is provided. The method includes forming a mask including tantalum carbide that masks a portion of a substrate, and epitaxially growing a crystal including silicon carbide seeded by an exposed surface of the substrate. A method of selectively etching silicon carbide is also ...

07/27/06 - 20060166453 - Method and apparatus for forming patterned photosensitive material layer
A method for forming a patterned photosensitive material layer over a substrate is described. A photosensitive material layer is formed on a substrate and then exposed. The selected parameters of the photosensitive material layer or between the photosensitive material layer and the predetermined layer are measured for determining whether the ...

08/18/05 - 20050181571 - Method and apparatus for forming patterned photoresist layer
A method for forming a patterned photoresist layer aligned with a predetermined layer is described. A photoresist layer is formed on a substrate and then exposed. The overlay offset between the exposed portions of the photoresist layer and the predetermined layer is measured for determining whether the exposed portions of ...



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