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Semiconductor Device Manufacturing: Process > Forming Bipolar Transistor By Formation Or Alteration Of Semiconductive Active Regions > Self-aligned > Dopant Implantation Or Diffusion > Simultaneous Introduction Of Plural Dopants > Plural Doping Steps Plural Doping StepsPlural Doping Steps patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077720 - Manufacturing method for an integrated semiconductor structure and corresponding integrated semiconductor structure The present invention provides a manufacturing method for an integrated semiconductor structure and a corresponding integrated semiconductor structure. The manufacturing method comprises the steps of: providing an integrated circuit substrate having a main surface; providing a dielectric layer on said main surface; providing a via in said dielectric layer, said ... 03/01/07 - 20070048959 - Registration mark within an overlap of dopant regions A first mark, in a double-well integrated circuit technology, is formed by a first etching of a first mask layer on top of an ONO stack. After a first well is doped, a second etching occurs at the first etching sites in the uppermost layer of oxide of the ONO ... 02/22/07 - 20070042559 - Formation of nitrogen containing dielectric layers having a uniform nitrogen distribution therein using a high temperature chemical treatment The present invention provides a method for manufacturing a gate dielectric, a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit. The method for manufacturing the gate dielectric, without limitation, may include forming a nitrided dielectric layer (520) over a substrate (310), the nitrided dielectric ... 01/04/07 - 20070004162 - Capacitor structure for a logic process A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing ... 07/13/06 - 20060154431 - Method of fabricating a silicon-on-insulator device with a channel stop A fabrication process for a silicon-on-insulator (SOI) device includes defining an active region in an 501 substrate, doping the entire active region with an impurity of a given conductive type, masking a main part of the active region, and doping the peripheral parts of the active region at least two ... ### FreshPatents.com Support |