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Semiconductor Device Manufacturing: Process > Forming Bipolar Transistor By Formation Or Alteration Of Semiconductive Active Regions > Having Heterojunction Having HeterojunctionHaving Heterojunction patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054460 - System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop A method and resulting etch-stop layer comprising a silicon-germanium layer and a dopant layer within the silicon-germanium layer. The silicon-germanium layer is comprised of less than about 70% germanium and contains one or more dopant elements selected from the group consisting of boron and carbon. The dopant layer has one ... 03/01/07 - 20070048956 - Interrupted deposition process for selective deposition of si-containing films A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while ... 11/09/06 - 20060252216 - Methods to improve the sige heterojunction bipolar device performance Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a noble gas, or mixtures thereof into at least a collector. The species-rich dopant ... 10/05/06 - 20060223274 - Semiconductor device and manufacturing method thereof In general, this disclosure describes a semiconductor device that exhibits an increased resistance and reduced leakage current in a reverse-biased state, and a method for manufacturing such a semiconductor device. For example, in one embodiment, the increased resistance in the reverse-biased state is obtained by introducing either a P+ or ... 06/08/06 - 20060121682 - Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such as a GaN based layer, is on the ... 05/18/06 - 20060105532 - Integrated circuit and method for manufacturing an integrated circuit on a chip An integrated circuit and method for manufacturing an integrated circuit on a chip is provided, whereby a first bipolar transistor has a first collector region of a first conductivity type and a second bipolar transistor has a second collector region of the first conductivity type. The method includes the steps ... 03/30/06 - 20060068557 - Semiconductor device and method for fabricating the same On an insulation layer 12 formed on a silicon substrate 10, there are formed in an NMOS transistor region 16 an NMOS transistor 14 comprising a silicon layer 34, a lattice-relaxed silicon germanium layer 22 formed on the silicon layer 34, a tensile-strained silicon layer 24 formed on the silicon ... 02/23/06 - 20060040453 - Bipolar transistor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a second side of the collector region, ... 02/09/06 - 20060030113 - Heterojunction bipolar transistor and method for fabricating the same The following layers are successively formed on a heavily-doped n-type first subcollector layer: a heavily-doped n-type second subcollector layer made of a material having a small band gap; an i-type or a lightly-doped n-type collector layer; a heavily-doped p-type base layer; an n-type emitter layer made of a material having ... 11/24/05 - 20050260820 - Method of manufacturing a semiconductor integrated circuit device having a trench A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in ... 09/08/05 - 20050196931 - Self-aligned lateral heterojunction bipolar transistor A lateral heterojunction bipolar transistor (HBT), comprising a semiconductor substrate having having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an ... 08/18/05 - 20050181569 - Semiconductor device and manufacturing method thereof A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8a formed in a base extraction electrode 5B of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation film 9 extends so as to protrude from a surface opposite to a semiconductor substrate 1 ... 06/30/05 - 20050142788 - Mosfet performance improvement using deformation in soi structure A method for manufacturing a semiconductor device is provided. The method includes forming a semiconductor layer on a substrate. The first region of the substrate is expanded to push up the first portion of the semiconductor layer, thereby applying tensile stress to the first portion. The second region of the ... ### FreshPatents.com Support |