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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Radiation Or Energy Treatment Modifying Properties Of Semiconductor Regions Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.) Radiation Or Energy Treatment Modifying Properties Of Semiconductor Regions Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.)Radiation Or Energy Treatment Modifying Properties Of Semiconductor Regions Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/01/07 - 20070048954 - Method for etching and apparatus for etching A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to ... 02/22/07 - 20070042557 - Data download to imager chip using image sensor as a receptor An imaging device having a CMOS photosensor array for capturing images is described in which the array is also used to input programming and/or data used to control the imaging operations. The data-input can be based upon variations in light color, value, intensity, and patterning, or any combinations of the ... 02/01/07 - 20070026620 - Method of fabricating semiconductor device A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined semiconductor layers 2 to 9 containing at least an active layer ... 02/01/07 - 20070026619 - Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin ... 12/28/06 - 20060292808 - Absorber layer for dsa processing A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising ... 10/19/06 - 20060234458 - Dual wavelength thermal flux laser anneal A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer ... 08/03/06 - 20060172503 - Methods of forming silicide Methods of fully siliciding semiconductive materials of semiconductor devices are disclosed. A preferred embodiment comprises depositing an alloy comprised of a first metal and a second metal over a semiconductive material. The device is heated, causing atoms of the semiconductive material to move towards and bond to the atoms of ... 07/06/06 - 20060148186 - Method and apparatus for manufacturing gallium nitride based single crystal substrate A method and apparatus for manufacturing a nitride based single crystal substrate. The method includes placing a preliminary substrate on a susceptor installed in a reaction chamber; growing a nitride single crystal layer on the preliminary substrate; and irradiating a laser beam to separate the nitride single crystal layer from ... 04/13/06 - 20060079062 - Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a ... 01/05/06 - 20060003535 - Apparatus and method for controlling diffusion A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of dopant elements. Selection of a plurality of dopant elements includes selecting a first dopant element with a first atomic radius larger than a host ... 10/20/05 - 20050233533 - Semiconductor device having multiple work functions and method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a first transistor (120) located over a semiconductor substrate (110), wherein the first transistor (120) has a metal gate electrode (135) ... 10/06/05 - 20050221569 - Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial temperature gradient centered on a tip of a concave. This forms a crystal grain in the concave tip, which grows ... 09/15/05 - 20050202644 - Method for fabricating metal gate structures Methods of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising source/drain and gate regions, wherein the gate region comprises a metal layer disposed on a gate dielectric layer, and then laser annealing the substrate. ... 06/09/05 - 20050124129 - Method of fabrication of silicon-gate mis transistor Disclosed is a method for manufacturing a semiconductor device, the method includes forming an insulator layer on a crystalline silicon substrate; forming selectively a silicon layer on the insulator layer, the silicon layer being lower in degree of crystallinity relative to the substrate; implanting impurity ions to surfaces of the ... ### FreshPatents.com Support |