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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Making Plural Insulated Gate Field Effect Transistors Of Differing Electrical Characteristics > Introducing A Dopant Into The Channel Region Of Selected Transistors Introducing A Dopant Into The Channel Region Of Selected TransistorsIntroducing A Dopant Into The Channel Region Of Selected Transistors patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/19/06 - 20060234455 - Structures and methods for forming a locally strained transistor Embodiments of the invention provide structures and methods for forming a strained MOS transistor. A preferred embodiment includes creating a compressive strain in a PMOS transistor for improving carrier mobility without the need for source/drain recess formation and SiGe epitaxy. Embodiments comprise forming a gate electrode on a silicon substrate, ... 09/21/06 - 20060211207 - Semiconductor processing methods of forming integrated circuitry Semiconductor processing methods of forming integrated circuitry are described. In one embodiment, memory circuitry and peripheral circuitry are formed over a substrate. The peripheral circuitry comprises first and second type MOS transistors. Second type halo implants are conducted into the first type MOS transistors in less than all of the ... ### FreshPatents.com Support |