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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Vertical Channel > V-gate > Totally Embedded In Semiconductive Layers Totally Embedded In Semiconductive LayersTotally Embedded In Semiconductive Layers patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/08/07 - 20070032020 - Structures and methods for forming shielded gate field effect transistors A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode in ... 12/21/06 - 20060286751 - Semiconductor device and method for manufacturing the same A semiconductor device includes: a semiconductor substrate; an element region having a semiconductor element including an impurity layer and a trench, wherein the impurity layer is disposed in the trench, and wherein the trench is disposed on a main surface of the substrate; and a field region disposed around the ... 06/08/06 - 20060121676 - Trench mis device with thick oxide layer in bottom of gate contact trench A trench MIS device includes a thick dielectric layer at the bottom of the trench. The thick dielectric layer can be formed by the deposition or thermal growth of a dielectric material, such as silicon dioxide, on the bottom portion of the trench. The thick dielectric layer, which reduces the ... ### FreshPatents.com Support |