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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Including Passive Device (e.g., Resistor, Capacitor, Etc.) > Capacitor > Planar Capacitor Planar CapacitorPlanar Capacitor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/22/07 - 20070066012 - Semiconductor device and method for fabricating the same A semiconductor device comprises a capacitor formed by sequentially stacking a lower electrode, a capacitor insulating film, and an upper electrode over a substrate. The capacitor insulating film is made of Hf oxide or Zr oxide, and between the lower electrode and the capacitor insulating film, a first barrier film ... 02/08/07 - 20070032015 - Semiconductor device and manufacturing method of the same To provide a semiconductor device capable of improving accuracy in finishing a hole in which a conductive plug right under a capacitor, and a manufacturing method of such a semiconductor device comprising the following steps: a step of forming first and second conductive plugs 32a, 32b in first and second ... 02/01/07 - 20070026603 - Methods for fabricating dynamic random access memory cells having laterally offset storage nodes DRAM cells include a common drain region in an integrated circuit substrate and first and second source regions in the integrated circuit substrate, a respective one of which is laterally offset from the common drain region along respective first and second opposite directions. First and second storage nodes are provided ... 01/18/07 - 20070015330 - Metal/semiconductor/metal (msm) back-to-back schottky diode A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold voltage, breakdown voltage, and on/off current ratio. The method is ... 01/18/07 - 20070015329 - Metal/znox/metal current limiter A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method comprises: providing a substrate; forming an MSM bottom electrode overlying the substrate; forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range ... 01/18/07 - 20070015328 - Msm binary switch memory device A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top ... 12/07/06 - 20060275979 - Semiconductor integrated circuit including a dram and an analog circuit A semiconductor device including an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part ... 10/19/06 - 20060234442 - Semiconductor device and method of fabricating the same According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, ... 08/03/06 - 20060172488 - Semiconductor device manufacturing method The invention is to prevent dielectric breakdown of a capacitor in a semiconductor device having the capacitor and a MOS transistor formed on a same semiconductor substrate. A SiO2 film that is to be a gate insulation film of a high voltage MOS transistor is formed on a whole surface ... 08/03/06 - 20060172487 - High density fet with self-aligned source atop the trench A method for manufacturing a power semiconductor device which includes forming a semiconductor region such as a polysilicon layer or epitaxially grown silicon over a region implanted with source implants and applying heat in a thermal step to cause the source implants to diffuse into the semiconductor region. ... 07/20/06 - 20060160300 - Storage capacitor and method of manufacturing a storage capacitor A storage capacitor suitable for use in a DRAM cell, as well as to a method of manufacturing such a storage capacitor is disclosed. The storage capacitor is formed at least partially above a semiconductor substrate surface. The invention also includes a memory array employing the storage capacitor. ... 07/20/06 - 20060160299 - Single mask mim capacitor and resistor with in trench copper drift barrier The formation of a MIM (metal insulator metal) capacitor (164) and concurrent formation of a resistor (166) is disclosed. A copper diffusion barrier (124) is formed over a copper deposition (110) that serves as a bottom electrode (170) of the capacitor (164). The copper diffusion barrier (124) mitigates unwanted diffusion ... 06/29/06 - 20060141704 - Manufacturing method of semiconductor device A method of manufacturing a semiconductor device including forming a gate oxide layer, a first conductive layer, a capacitor dielectric layer, and a second conductive layer on a semiconductor substrate. The method also includes patterning the first and second conductive layers, the gate oxide layer, and the field oxide layer ... 06/29/06 - 20060141703 - Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two electrode layers and then reducing the ions of conductive nanoparticles into ... 06/29/06 - 20060141702 - Method for depositing titanium oxide layer and method for fabricating capacitor by using the same Disclosed are a method for depositing a titanium oxide (TiO2) layer and a method for fabricating a capacitor by using the same. The method for forming the TiO2 layer includes the steps of: a) adsorbing titanium hydride (TiH2) on a wafer loaded into a chamber by supplying TiH2 to the ... 05/11/06 - 20060099760 - Storage capacitors for semiconductor devices and methods of forming the same Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to ... 04/13/06 - 20060079050 - Capacitor structure Structures including a capacitor dielectric material disposed on the surface of an electrode suitable for use in forming capacitors are disclosed. Methods of forming such structures are also disclosed. ... 03/09/06 - 20060051917 - Capacitive element and method of manufacturing the same A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The ... 02/23/06 - 20060040445 - Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be ... 02/09/06 - 20060030100 - Semiconductor device and method for fabricating the same A semiconductor device comprises: a lower contact electrode 1; an adhesion improving layer 3 formed on the lower contact electrode 1; and a capacitor including a lower electrode 4 in a projected structure formed on the adhesion improving layer 3, a capacitor dielectric film 5 formed on the lower electrode ... 01/12/06 - 20060008980 - Zero cost non-volatile memory cell with write and erase features A memory device includes a coupling capacitor and a field-effect transistor. The coupling capacitor is formed from (1) a first dopant region in a second dopant region on a substrate, (2) a gate dielectric atop the first dopant region, and (3) a first gate conductor atop the gate dielectric. The ... 01/05/06 - 20060003526 - Integrated circuit arrangement comprising a capacitor, and production method An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the ... 10/13/05 - 20050227433 - Methods of forming capacitor constructions The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and ... 09/15/05 - 20050202629 - Method and structure for non-single-polycrystalline capacitor in an integrated circuit A method of forming a non-single-crystalline capacitor in an integrated circuit. It includes the steps of forming a first non-single-crystalline layer on a gate dielectric layer of a substrate of an integrated circuit. Next, a capacitor dielectric layer is formed on the first non-single-crystalline layer, and a second non-single-crystalline layer ... 06/30/05 - 20050142733 - Thin film capacitor and its manufacture method A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal ... 06/16/05 - 20050130369 - Semiconductor device having metal-insulator-metal capacitor and method for fabricating the same In a semiconductor device including a metal-insulator-metal (MIM) capacitor and a method for fabricating the same, a first metal layer and a dielectric film are sequentially formed on an insulating layer. The dielectric film is patterned, wherein a remaining portion is incorporated into the MIM capacitor, and a second metal ... 06/09/05 - 20050124112 - Asymmetric-area memory cell An asymmetric-area memory cell, and a fabrication method for forming an asymmetric-area memory cell, are provided. The method comprises: forming a bottom electrode having an area; forming a CMR memory film overlying the bottom electrode, having an asymmetric area; and, forming a top electrode having an area, less than the ... ### FreshPatents.com Support |