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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Including Passive Device (e.g., Resistor, Capacitor, Etc.) > Capacitor > And Additional Field Effect Transistor (e.g., Sense Or Access Transistor, Etc.) > Including Transistor Formed On Trench Sidewalls Including Transistor Formed On Trench SidewallsIncluding Transistor Formed On Trench Sidewalls patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/16/06 - 20060258087 - Methods of forming vertical transistor structures The invention includes methods in which an angled implant is utilized to self-align a source/drain region implant with the top edge of a gateline of a vertical transistor structure. The invention also includes methods in which an angled implant is utilized to implant dopant beneath the gateline of a vertical ... 11/16/06 - 20060258086 - Methods of forming vertical transistor structures The invention includes methods in which an angled implant is utilized to self-align a source/drain region implant with the top edge of a gateline of a vertical transistor structure. The invention also includes methods in which an angled implant is utilized to implant dopant beneath the gateline of a vertical ... 10/26/06 - 20060240613 - Methods of operating electrically alterable non-volatile memory cell A nonvolatile memory cell is provided. The memory cell includes a storage transistor and an injector in a well of an n-type conductivity. The well is formed in a semiconductor substrate of a p-type conductivity. The storage transistor comprises a source, a drain, a channel, and a charge storage region. ... ### FreshPatents.com Support |