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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Including Passive Device (e.g., Resistor, Capacitor, Etc.) > Capacitor > Having High Dielectric Constant Insulator (e.g., Ta2o5, Etc.) Having High Dielectric Constant Insulator (e.g., Ta2o5, Etc.)Having High Dielectric Constant Insulator (e.g., Ta2o5, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077701 - Method of forming a gate stack containing a gate dielectric layer having reduced metal content A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal ... 03/29/07 - 20070072364 - Method for fabricating transistor gate structures and gate dielectrics thereof Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may ... 03/29/07 - 20070072363 - Method for fabricating transistor gate structures and gate dielectrics thereof Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may ... 03/22/07 - 20070066009 - Sidewall image transfer (sit) technologies A structure fabrication method. The method comprises providing a structure which comprises (a) a to-be-etched layer, (b) a memory region, (c) a positioning region, (d) and a capping region on top of one another. Then, the positioning region is indented. Then, a conformal protective layer is formed on exposed-to-ambient surfaces ... 02/08/07 - 20070032013 - Methods of forming a metal oxide layer including zirconium oxide and methods of forming a capacitor for semiconductor devices including the same The present invention provides methods of forming a metal oxide layer and methods of forming a capacitor including the same. The methods of forming the metal oxide include forming a thin layer including a metal oxide, such as zirconium oxide, on a substrate and performing a post-treatment on the thin ... 12/21/06 - 20060286744 - Semiconductor device suitable for forming conductive film such as platinum with good coverage, and its manufacture A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface ... 11/30/06 - 20060270148 - Novel high-k dielectric materials and processes for manufacturing them High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell ... 11/30/06 - 20060270147 - Hafnium titanium oxide films Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. ... 11/16/06 - 20060258085 - Methods of forming capacitors This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen comprising material on the first capacitor electrode material. The dielectric ... 11/09/06 - 20060252200 - Semiconductor device and method of manufacturing thereof A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface ... 11/02/06 - 20060246655 - Memory of forming a coupling dielectric ta2o5 in a memory device A method of forming a coupling dielectric in a memory cell includes forming an oxide on a substrate, forming Ta2O5 on the oxide, oxidizing the Ta2O5 with rapid thermal process (RTP) at a temperature above the crystallization temperature for Ta2O5, forming a cell nitride on the oxidized Ta2O5, and forming ... 10/12/06 - 20060228855 - Capacitor with co-planar electrodes Methods and structures related to film capacitors are disclosed. The capacitors include electrodes in a side-by-side or laterally offset configuration instead of a usual stacked configuration. The side-by-side configuration allows the interposing of the dielectric layer between the capacitor electrodes to be formed without as stringent a fabrication environment as ... 09/28/06 - 20060216884 - Methd for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device capable of improving the film quality of a dielectric film. The method includes the steps of providing a semiconductor substrate having a storage node contact; forming a metal storage electrode on the substrate; forming a dielectric film using ... 09/21/06 - 20060211195 - Transistor device and methods of manufacture thereof Methods of forming transistor devices and structures thereof are disclosed. A first dielectric material is formed over a workpiece, and a second dielectric material is formed over the first dielectric material. The workpiece is annealed, causing a portion of the second dielectric material to combine with the first dielectric material ... 09/14/06 - 20060205143 - Dram with high k dielectric storage capacitor and method of making the same A memory cell is fabricated by forming a first capacitor electrode including silicon. A metal layer is formed in physical contact with the first capacitor electrode. The metal layer is formed from a material having a high affinity for oxygen and a melting point above about 1000° C. A layer ... 08/03/06 - 20060172485 - Systems and methods for forming metal oxides using alcohols A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds. ... 07/13/06 - 20060154417 - Semiconductor memory device The present invention is directed towards a method of manufacturing a semiconductor memory device arranged of a cross point memory array having memory elements provided between upper and lower electrodes for storage of data. The present invention comprises a lower electrode lines forming step of planarizing each of the lower ... 06/29/06 - 20060141698 - Method of improved high k dielectric - polysilicon interface for cmos devices Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO) anneal of a polysilicon layer such as an HSG polysilicon capacitor electrode, at less than 800° C., is utilized to grow a thin oxide ... 06/22/06 - 20060134856 - Method for manufacturing capacitor of semiconductor element A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace ... 06/08/06 - 20060121671 - Semiconductor device and manufacturing process therefor There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MOxCyNz ... 04/06/06 - 20060073658 - Method for making a ferroelectric memory cell in a ferroelectric memory device, and a ferroelectric memory device In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of ... 01/12/06 - 20060008978 - Decoupling capacitor for high frequency noise immunity Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate, and a top plate layer disposed on ... 12/08/05 - 20050272200 - Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor ... 11/03/05 - 20050245023 - Semiconductor device and method of manufacturing the same A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains ... 10/13/05 - 20050227431 - Memory device with platinum-rhodium stack as an oxygen barrier The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium alloy deposited by metal organic chemical vapor deposition (MOCVD) in the presence of a reducer, such as hydrogen (H2) gas, and ... 09/29/05 - 20050215006 - Method for fabricating semiconductor device A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition ... 09/22/05 - 20050208719 - Semiconductor device and method of manufacturing the same A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and ... 09/22/05 - 20050208718 - Methods of forming a capacitor using an atomic layer deposition process Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure including a lower electrode. An ammonia (NH3) plasma is ... 09/15/05 - 20050202627 - Method for forming a dielectric layer in a semiconductor device The present invention provides a method for forming an improved dielectric layer for semiconductor devices such as gate structures and capacitors. The method utilizes a layer of (TaO)1-x(TiO)xN (x defined herein) as a substitute for SiO2, together with one or more additional procedures to minimize or prevent channel leakage and ... 09/08/05 - 20050196917 - Method for forming a (111) oriented bsto thin film layer for high dielectric constant capacitors A method for forming high capacitance crystalline dielectric layers with (111) texture is disclosed. In an exemplary embodiment, deposition of a plurality of nuclei is performed at a temperature in the range of about 430 to 460 degrees Celsius, followed by growth of a continuous BSTO dielectric layer at a ... 08/25/05 - 20050186727 - Simplified bottom electrode-barrier structure for making a ferroelectric capacitor stacked on a contact plug The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug. The bottom electrode stack is prepared by depositing a ... 07/28/05 - 20050164445 - System and method for integration of hfo2 and rtcvd poly-silicon A method for fabricating a portion of an integrated circuit on a semiconductor substrate. The method includes cleaning the surface of the substrate, and forming a thin insulate over the substrate. The method also includes depositing a high dielectric constant (high-k) material over the thin insulate, and then performing a ... 07/21/05 - 20050158944 - Mixed-mode process A mixed-mode process introduces a hard mask layer. Due to the introduced hard mask layer made of non-resist material formed over devices, performance of a formed capacitor is protected from effects of an implantation process such as source/drain implantation. A self-aligned silicide (salicide) process for a MOSFET transistor can also ... 06/23/05 - 20050136589 - Method for integrating high-k dielectrics in transistor devices Methods are disclosed that fabricating semiconductor devices with high-k dielectric layers. The invention removes portions of deposited high-k dielectric layers not below gates and covers exposed portions (e.g., sidewalls) of high-k dielectric layers during fabrication with an encapsulation layer, which mitigates defects in the high-k dielectric layers and contamination of ... 06/16/05 - 20050130368 - Capacitor and manufacturing method thereof, semiconductor device and substrate for a semiconductor device A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon. ... 06/09/05 - 20050124109 - Top surface roughness reduction of high-k dielectric materials using plasma based processes A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer. ... 06/02/05 - 20050118761 - Semiconductor constructions having crystalline dielectric layers The invention includes methods of forming capacitors and capacitor constructions. In one implementation, a method of forming a capacitor includes forming a first capacitor electrode. A first layer of a first capacitor dielectric material is formed over the first capacitor electrode. A second layer of the first capacitor dielectric material ... ### FreshPatents.com Support |