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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Including Passive Device (e.g., Resistor, Capacitor, Etc.) > Capacitor CapacitorCapacitor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077700 - Capacitance process using passivation film scheme In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a substrate. Under the first embodiment of the invention, a layer of etch stop material, serving as ... 03/29/07 - 20070072362 - Solid electrolytic capacitor, fabrication method thereof, and coupling agent utilizing in the same A solid electrolytic capacitor, fabrication method, and coupling agent utilized in the same. The capacitor includes a valve metal layer, an oxide dielectric layer on at least a part of the surface of the valve metal layer, a coupling layer having a molecular chain with a first end bonding to ... 03/29/07 - 20070072361 - Method of reducing current leakage in a metal insulator metal semiconductor capacitor and semiconductor capacitor thereof A method for reducing leakage current in a semiconductor capacitor. The method includes providing a top plate for collecting charge, providing a bottom plate for collecting an opposing charge to the top plate, providing a dielectric layer for insulation between the top plate and the bottom plate, providing a top ... 03/15/07 - 20070059879 - Pixel structure and fabricating method thereof A pixel structure is provided, which includes a substrate, a thin film transistor (TFT), a capacitor, a protection layer and a pixel electrode. The substrate has an active device region and a capacitor region and a plurality of openings are formed within the capacitor region. Besides, the TFT is disposed ... 02/15/07 - 20070037345 - Memory cell array and memory cell A method of forming a memory cell array including a plurality of memory cells includes patterning isolation trenches on a semiconductor substrate and filling with an insulating material to define active area lines. In particular, the isolation trenches are patterned as straight lines, resulting in the active area lines being ... 02/01/07 - 20070026601 - Dram constructions and electronic systems The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The ... 01/25/07 - 20070020843 - Method of producing a chip-type solid electrolytic capacitor A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The capacitor elements are bonded to each other by a bonding agent such as a solder or a conductive adhesive. The cathode terminal is provided with ... 01/04/07 - 20070004125 - Semiconductor device and manufacturing method thereof It is an object of the present invention to provide a semiconductor device in which a barrier property is improved; a compact size, a thin shape, and lightweight are achieved; and flexibility is provided. By providing a stacked body including a plurality of transistors in a space between a pair ... 11/30/06 - 20060270146 - Contact structure for a stack dram storage capacitor A method for fabricating a contact structure for a stack storage capacitor includes forming the contact structure in a node contact region with contact openings, an insulating liner and a conductive filling material prior to the patterning of bit lines. ... 11/30/06 - 20060270145 - Capacitive array A capacitive array comprising at least two capacitive entities, comprising a substrate layer. The substrate layer comprises a comb comprising at least four substantially identical teeth, and, for each capacitive entity, a set of fingers comprising one or more interlinked fingers. At least two sets of fingers comprise a different ... 11/23/06 - 20060263974 - Methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in dram, and methods of forming dram memory cell The invention includes methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cells. In one implementation, a method of electrically interconnecting different elevation conductive ... 11/16/06 - 20060258084 - Vertical transistors Vertical transistors for memory cells, such as 4F2 memory cells, are disclosed. The memory cells use digit line connections formed within the isolation trench to connect the digit line with the lower active area. Vertical transistor pillars can be formed from epitaxial silicon or etched from bulk silicon. Memory cells ... 11/09/06 - 20060252199 - Gate of a semiconductor device and method for forming the same Disclosed herein is a method for forming a gate structure in a semiconductor device. The method comprises forming a SiGe film on a predetermined region of a silicon substrate corresponding to a bit-line node portion where a bit-line junction is formed, growing a silicon film over the silicon substrate having ... 09/21/06 - 20060211194 - Methods of reducing floating body effect Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion region and the accompanying electrostatic potential created. In a preferred embodiment, a word line is recessed into ... 09/21/06 - 20060211193 - Capacitor element for solid electrolytic capacitor and method of making the same The capacitor element includes a porous chip body and an anode wire having an end portion embedded in the chip body. The chip body includes a surface provided with a dielectric film which in turn is formed with a solid electrolyte layer thereon. Further, the solid electrolyte layer is laminated ... 09/14/06 - 20060205142 - Methods of forming semiconductor constructions The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is ... 09/14/06 - 20060205141 - Method of fabricating semiconductor devices having buried contact plugs A method includes forming a lower dielectric layer on a semiconductor substrate, forming a bit line landing pad and a storage landing pad that penetrate the lower dielectric layer, covering the lower dielectric layer, the bit line landing pad, and the storage landing pad with an intermediate dielectric layer, forming ... 09/14/06 - 20060205140 - Integrated circuit capacitor having antireflective dielectric A capacitor (100) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor (100) has conductive top and bottom electrodes (140, 144) and a nonconductive capacitor dielectric (142). In one example, the dielectric (142) includes first and second thin dielectric layers (112, 114) that ... 09/07/06 - 20060199328 - Non-dispersive high density polysilicon capacitor utilizing amorphous silicon electrodes The present invention provides, in one aspect, a method of fabricating a capacitor 615, comprising forming a first electrode 610, placing a dielectric 515 over the first electrode, and locating a second electrode 510 over the dielectric wherein at least one of the first or second electrodes 610, 510 is ... 08/17/06 - 20060183280 - Metal-insulator-metal capacitors and methods of forming the same There are provided metal-insulator-metal (MIM) capacitors and methods of forming the same. The capacitors and the formation methods thereof provide a way of simplifying semiconductor fabrication processes, using component elements of the capacitor and insulating layers around the capacitor. To this end, lower and upper electrodes are sequentially stacked on ... 08/03/06 - 20060172484 - Method of forming a thin layer and method of manufacturing a flash memory device and a capacitor using the same In a method of forming a thin layer and a method of manufacturing a flash memory and a capacitor using the same, a first thin layer may be formed on a substrate, and the thin layer may include one of metal, metal nitride and a combination thereof. A binding inhibitor ... 07/27/06 - 20060166432 - Process for oxide cap formation in semiconductor manufacturing A process for forming a semiconductor device having an oxide beanie structure (an oxide cap overhanging an underlying portion of the device). An oxide layer is first provided covering that portion, with the layer having a top surface and a side surface. The top and side surfaces are then exposed ... 07/06/06 - 20060148168 - Process for fabricating dynamic random access memory A method of fabricating a dynamic random access memory is provided. A word line structure is formed on a substrate. A source region and a drain region are formed in the substrate on each side of the word line structure. Spacers are formed on the sidewalls of the word line ... 06/22/06 - 20060134855 - Method for fabricating capacitor of semiconductor device A method for forming a capacitor of a semiconductor device includes forming a first insulation layer having a storage node plug on a semiconductor substrate; forming an etch stop layer and a second insulation layer sequentially on the substrate having the first insulation layer; forming a hole exposing a portion ... 06/22/06 - 20060134854 - Capacitor of semiconductor device and method for forming the same In a method for forming a capacitor for use in a semiconductor device, a nitride film for stopping etching, a first mold oxide film, an insulating film, deposited on a substrate are etched to expose the respective storage node contacts and thereby to form a plurality of contact holes arrayed ... 06/15/06 - 20060128092 - Wafer bonded mos decoupling capacitor A technique for forming a MOS capacitor (100) that can be utilized as a decoupling capacitor is disclosed. The MOS capacitor (100) is formed separately from the particular circuit device (170) that it is to service. As such, the capacitor (100) and its fabrication process can be optimized in terms ... 03/23/06 - 20060063325 - Embedded capacitor structure in circuit board and method for fabricating the same An embedded capacitor structure in a circuit board and a method for fabricating the same are proposed. The circuit board is formed with a first circuit layer on at least one surface thereof, wherein the first circuit layer has at least one first electrode plate for the capacitor structure. Then, ... 03/23/06 - 20060063324 - Method of manufacturing a semiconductor device In an embodiment, a simplified method of manufacturing a semiconductor device reduces a step between cell and peripheral areas. First and second openings are formed through a plurality of thin layers including a support layer on a substrate. A storage electrode and a guide ring are formed on sidewalls and ... 03/02/06 - 20060046381 - Methods of forming capacitor structures, methods of forming threshold voltage implant regions, and methods of implanting dopant into channel regions The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in ... 02/02/06 - 20060024882 - Method for manufacturing a semiconductor device having silicided regions The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device (100) , among other steps, includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) ... 01/26/06 - 20060019442 - Method of forming a capacitor A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed ... 01/12/06 - 20060008977 - Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry are described. In one embodiment, active areas are formed over a substrate, with one of the active areas having a width of less than one micron, and with some of ... 12/29/05 - 20050287737 - Method for forming storage node electrode of capacitor Disclosed is a method for forming a storage node electrode of a capacitor, capable of preventing wet chemicals from penetrating into an oxide layer. The method includes the steps of preparing a semiconductor substrate, forming a first oxide layer on the semiconductor substrate, forming conductive plugs for filling the first ... 12/22/05 - 20050282335 - Method for manufacturing a semiconductor device having polysilicon plugs A method for manufacturing a DRAM device on a silicon substrate includes: forming cell transistors in a memory cell area and other transistors in a peripheral circuit area; forming polysilicon plugs connected to diffused regions of the cell transistors and metallic plugs connected to diffused regions of the other transistors; ... 11/24/05 - 20050260811 - Low temperature method for metal deposition A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. ... 10/27/05 - 20050239243 - Methods of forming dram arrays The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the ... 10/06/05 - 20050221556 - Method of manufacturing semiconductor device A method of manufacturing semiconductor device comprising forms a first impurity diffusion region as a lower electrode of a capacitor in a first area of a semiconductor substrate by implanting impurities at a first dose; forms a second impurity diffusion region in a second area, at the end part of ... 10/06/05 - 20050221555 - Embedded capacitors using conductor filled vias Embedded capacitors and a method for manufacturing the embedded capacitors. The method can include the steps of forming at least one bore (115) in a dielectric substrate (100). The dielectric substrate can be mechanically punched or laser cut to form the bore. The bore can be filled with a conductive ... 09/29/05 - 20050215005 - Capacitor with stoichiometrically adjusted dielectric and method of fabricating same A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of ... 09/29/05 - 20050215004 - Method of forming mim capacitor electrodes A novel method for forming electrodes in the fabrication of an MIM (metal-insulator-metal) capacitor, is disclosed. The method improves MIM capacitor performance by preventing plasma-induced damage to a dielectric layer during deposition of a top electrode on the dielectric layer, as well as by reducing or preventing the formation of ... 09/22/05 - 20050208717 - Capacitor with enhanced performance and method of manufacture A decoupling capacitor is formed in a semiconductor substrate that includes a strained silicon layer. A substantially flat bottom electrode is formed in a portion of the strained silicon layer and a capacitor dielectric overlying the bottom electrode. A substantially flat top electrode overlies said capacitor dielectric. The top electrode ... 09/08/05 - 20050196916 - Semiconductor device and manufacturing process therefor An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be manufactured using an existing structure in a semiconductor device. There is provided a semiconductor device 100, comprising a semiconductor ... 07/07/05 - 20050148139 - Method of manufacturing semiconductor device A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film 9, 10 above a semiconductor substrate 1; forming a capacitor Q having a lower electrode 11a, a dielectric film 13a, and an upper electrode 14c on the first insulating film 9, 10; forming a ... 06/30/05 - 20050142731 - Lateral phase change memory and method therefor Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein ... 06/02/05 - 20050118760 - Semiconductor device precursor structures to a double-sided capacitor or a contact A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is formed along sidewalls of at least one opening in an insulating layer on a semiconductor wafer. A first conductive layer is then formed over ... ### FreshPatents.com Support |