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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Including Diode Including DiodeIncluding Diode patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072360 - Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, ... 11/16/06 - 20060258081 - Method of forming a trench structure having one or more diodes embedded therein adjacent a pn junction A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending in the semiconductor region adjacent at least one of the P-type and N-type regions is formed. At least ... 11/02/06 - 20060246653 - High-performance one-transistor memory cell One aspect of this disclosure relates to a memory cell. In various embodiments, the memory cell includes an access transistor having a floating node, and a diode connected between the floating node and a diode reference potential line. The diode includes an anode, a cathode, and an intrinsic region between ... 06/08/06 - 20060121670 - Memory device having a semiconducting polymer film A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer ... 04/20/06 - 20060084221 - Semiconductor diode and method therefor In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate. ... 04/06/06 - 20060073657 - Junction diode comprising varying semiconductor compositions The invention provides for a junction diode including a heavily doped first region having a first conductivity type, a second lightly doped or intrinsic region having a second conductivity type, and a third heavily doped region having a second conductivity type. The junction diode comprises more than one semiconductor or ... 01/19/06 - 20060014342 - Method of manufacturing a semiconductor component A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth semiconductor region (140, 340) above the third semiconductor region, a fifth semiconductor region (150, 350) above ... 01/12/06 - 20060008975 - Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The ... 10/20/05 - 20050233517 - Semiconductor device and method for manufacturing same There is provided a technique for obtaining improved maximum allowed value for the antenna ratio while inhibiting the damage on the gate insulating film of the MOSFET. A semiconductor device having a configuration that comprises a silicon substrate, a contact interlayer film, a first interconnect interlayer film, a first via ... ### FreshPatents.com Support |