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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Including Bipolar Transistor (i.e., Bimos) Including Bipolar Transistor (i.e., Bimos)Including Bipolar Transistor (i.e., Bimos) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072359 - Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the ... 03/01/07 - 20070048928 - Method in the fabrication of a monolithically integrated vertical device on an soi substrate A method in the fabrication of a monolithically integrated vertical device on an SOI substrate comprises the steps of providing an SOI substrate including, from bottom to top, a silicon bulk material, an insulating layer, and an monocrystalline silicon layer; forming an opening in the substrate, which extends into the ... 11/02/06 - 20060246652 - Method of forming a semiconductor device and structure therefor A method of forming a semiconductor device includes forming isolation trenches that are used to isolate some of the electrical elements such as transistors, diodes, capacitors, or resistors on a semiconductor die from other elements on the semiconductor die. ... 08/24/06 - 20060189067 - Power converter apparatus using silicon germanium bipolar transistor for power switching A power converter is composed of a switching circuit including a bipolar transistor for switching a DC power input. A SiGe heterobipolar transistor is used as the aforementioned bipolar transistor. The high speed switching characteristics of the SiGe heterobipolar transistor effectively reduces loss of the power converter. ... 08/04/05 - 20050170580 - Double polysilicon bipolar transistor A bipolar transistor, with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and spaced from the emitter structure. A dielectric ... ### FreshPatents.com Support |