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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Complementary Insulated Gate Field Effect Transistors (i.e., Cmos) > And Additional Electrical Device > Including Additional Vertical Channel Insulated Gate Field Effect Transistor Including Additional Vertical Channel Insulated Gate Field Effect TransistorIncluding Additional Vertical Channel Insulated Gate Field Effect Transistor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/07/06 - 20060275974 - Method of fabricating a bottle trench and a bottle trench capacitor A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent ... 08/24/06 - 20060189063 - Insulated gate power semiconductor devices A trench-gate semiconductor device (100) has a trench network (STR1), ITR1) surrounding a plurality of closed transistor cells (TCS). The trench network comprises segment trench regions (STR1) adjacent sides of the transistor cells (TCS) and intersection trench regions (ITR1) adjacent corners of the transistor cells. As shown in FIG. 16 ... 05/25/06 - 20060110875 - Trench lateral power mosfet and a method of manufacturing the same A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with ... 05/25/06 - 20060110874 - Method of forming source contact of flash memory device The present invention relates to a method of forming a source contact of a flash memory device. According to the present invention, the method includes the steps of forming a first interlayer insulating film on a semiconductor substrate in which first junction regions and second junction regions both of which ... ### FreshPatents.com Support |