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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.) > Specified Crystallographic Orientation Specified Crystallographic OrientationSpecified Crystallographic Orientation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/25/07 - 20070020836 - Method for manufacturing thin film transistor substrate A method for manufacturing a TFT substrate includes forming a gate metal layer on an insulating substrate, forming a photo-sensitive layer pattern on the gate metal layer, forming a gate wiring by etching the gate metal layer using the photo-sensitive layer pattern, exposing the gate wiring by stripping the photo-sensitive ... 12/07/06 - 20060275971 - Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first ... 08/24/06 - 20060189058 - Fin type field effect transistors and methods of manufacturing the same A fin type field effect transistor includes a semiconductor substrate, an active fin, a first hard mask layer pattern, a gate insulation layer pattern, a first conductive layer pattern, and source/drain regions. The active fin includes a semiconductor material and is formed on the substrate and extends in a direction ... 07/06/06 - 20060148154 - Semiconductor devices having faceted channels and methods of fabricating such devices Disclosed are processes and techniques for fabricating semiconductor substrates for the manufacture of semiconductor devices, particularly CMOS devices, that include selectively formed, high quality single crystal or monocrystalline surface regions exhibiting different crystal orientations. At least one of the surface regions will incorporate at least one faceted epitaxial semiconductor structure ... 03/02/06 - 20060046366 - Method and apparatus for mobility enhancement in a semiconductor device A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region (18) is formed over a substrate that is bi-axially stressed. Source (30) and drain (32) regions are formed over the substrate. The source and drain regions provide ... 02/02/06 - 20060024876 - Methods, systems and structures for forming improved transistors A method (100) of forming a transistor includes forming a gate structure (106, 108) over a semiconductor body and forming recesses (112) substantially aligned to the gate structure in the semiconductor body. Carbon-doped silicon is then epitaxially grown (114) in the recesses, followed by forming sidewall spacers (118) over lateral ... 01/05/06 - 20060003510 - Technique for transferring strain into a semiconductor region A dislocation region is formed by implanting a light inert species, such as hydrogen, to a specified depth and with a high concentration, and by heat treating the inert species to create “nano” bubbles, which enable a certain mechanical decoupling to underlying device regions, thereby allowing a more efficient creation ... 12/22/05 - 20050282324 - Semiconductor device containing distorted silicon layer formed on silicon germanium layer A semiconductor device includes a silicon germanium layer, a silicon layer and a silicide layer. The silicon germanium layer is formed on a semicon-ductor substrate. The silicon layer is formed on the silicon germanium layer. The silicide layer is formed in a surface region of the silicon layer. A germanium ... 10/13/05 - 20050227425 - Method for fabricating semiconductor devices using strained silicon bearing material A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate has an overlying film of material with a second lattice ... 10/06/05 - 20050221549 - Semiconductor laser device A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that covers an end face ... 08/04/05 - 20050170577 - Strained silicon layer fabrication with reduced dislocation defect density A strained silicon layer fabrication employs a substrate having successively formed thereover: (1) a first silicon-germanium alloy material layer; (2) a first silicon layer; (3) a second silicon-germanium alloy material layer; and (4) a second silicon layer. Within the fabrication each of the first silicon-germanium alloy layer and the second ... ### FreshPatents.com Support |