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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Junction Gate (e.g., Jfet, Sit, Etc.) > Specified Crystallographic Orientation Specified Crystallographic OrientationSpecified Crystallographic Orientation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/28/06 - 20060292770 - Cmos on soi substrates with hybrid crystal orientations Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the steps of forming an SOI silicon epitaxy layer after the step of forming shallow trench isolation regions. The preferred sequence allows hybrid SOI CMOS ... 01/12/06 - 20060008958 - Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer A CMOS integrated circuit includes a substrate having an NMOS region with a P-well and a PMOS region with an N-well. A shallow trench isolation (STI) region is formed between the NMOS and PMOS regions and a composite silicon layer comprising a strained SiGe layer is formed over said P ... ### FreshPatents.com Support |