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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Junction Gate (e.g., Jfet, Sit, Etc.) Having Junction Gate (e.g., Jfet, Sit, Etc.)Having Junction Gate (e.g., Jfet, Sit, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072352 - Insulated gate field effect transistor and manufacturing method thereof A separation hole is provided in the center of the gate electrode. Accordingly, it is possible to suppress a drastic increase in feedback capacitance Crss in the case where drain-source voltage VDS is decreased and the width of the depletion layer is narrowed. Thus, high-frequency switching characteristics are improved. Moreover, ... 11/30/06 - 20060270132 - Manufacturing process and structure of power junction field effect transistor A manufacturing process and a power junction field-effect transistor (JFET) are provided. The basic concept of the present invention is to allow the current to flow vertically from the drain region on the bottom side to the source region on the topside of the device. By regulating the voltage applied ... 11/16/06 - 20060258071 - Methods of forming field effect transistors A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material and the semiconductive material. The space comprises an outermost portion and a portion immediately adjacent thereto. The outermost portion has ... 09/28/06 - 20060216879 - Method for manufacturing junction semiconductor device A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, ... 02/23/06 - 20060040437 - Methods of forming field effect transistors A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material and the semiconductive material. The space comprises an outermost portion and a portion immediately adjacent thereto. The outermost portion has ... ### FreshPatents.com Support |