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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Schottky Gate (e.g., Mesfet, Hemt, Etc.) > Self-aligned Self-alignedSelf-aligned patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/21/06 - 20060286728 - Method for forming recess gate of semiconductor device A method for forming a recess gate of a semiconductor device secures a sufficient overlap margin between a recess gate region and a gate electrode to prevent a phenomenon resulting from mis-alignment when a recess gate electrode is formed, thereby improving process defects and minimizing Vt movement between cells. ... 11/17/05 - 20050255641 - Semiconductor device and method of manufacturing the same It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard mask. A gate electrode (3) is formed by etching using a hard ... 11/10/05 - 20050250268 - Method of fabricating semiconductor device An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the ... ### FreshPatents.com Support |