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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Schottky Gate (e.g., Mesfet, Hemt, Etc.) > Plural Gate Electrodes (e.g., Dual Gate, Etc.) Plural Gate Electrodes (e.g., Dual Gate, Etc.)Plural Gate Electrodes (e.g., Dual Gate, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/22/07 - 20070065999 - Method for manufacturing semiconductor memory device using asymmetric junction ion implantation A method for manufacturing a semiconductor memory device using asymmetric junction ion implantation, including performing ion implantation for adjusting a threshold voltage to a semiconductor substrate, forming a gate stack on the semiconductor substrate to define a storage node junction region and a bit line junction region, implanting a first ... 03/23/06 - 20060063317 - Polysilicon conductor width measurement for 3-dimensional fets An apparatus and method is disclosed for determining polysilicon conductor width for 3-dimensional field effect transistors (FinFETs). Two or more resistors are constructed using a topology in which polysilicon conductors are formed over a plurality of silicon “fins”. A first resistor has a first line width. A second resistor has ... 12/08/05 - 20050272190 - Methods of fabricating fin field-effect transistors having silicide gate electrodes and related devices A method of fabricating a fin field-effect transistor includes forming a fin-shaped active region having first and second source/drain regions therein and a channel region therebetween vertically protruding from a semiconductor substrate, and forming a polysilicon gate electrode on sidewalls of the channel region. Opposing sidewalls of the polysilicon gate ... 09/29/05 - 20050214993 - Process for producing a field-effect transistor and transistor thus obtained A substrate supporting a portion of a semiconductor material is used to produce a field-effect transistor. A portion of a temporary material lies between the portion of semiconductor material and the substrate. A gate is formed, which comprises an upper part in rigid connection with the portion of semiconductor material, ... ### FreshPatents.com Support |