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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Schottky Gate (e.g., Mesfet, Hemt, Etc.) > Having Heterojunction (e.g., Hemt, Modfet, Etc.) Having Heterojunction (e.g., Hemt, Modfet, Etc.)Having Heterojunction (e.g., Hemt, Modfet, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/25/07 - 20070020829 - Semiconductor device and a method of manufacturing the same For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching ... 12/14/06 - 20060281238 - Method of manufacturing an adaptive algan buffer layer A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the ... 12/14/06 - 20060281237 - Method of manufacturing junction field effect transistor A method of manufacturing a junction field-effect transistor which controls variations of p-type impurities in a gate region and obtains a favorable PN junction characteristic includes: depositing ZnO in a thin layer by a sputtering method on a surface of a region in which a gate electrode of an n+-AlGaAs ... 09/14/06 - 20060205127 - Method of manufacturing photoreceiver Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrier layer, and the cap layer ... 05/18/06 - 20060105510 - Transistor or semiconductor device and method of fabricating the same Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive ... 03/16/06 - 20060057790 - Hemt device and method of making A HEMT type device which has pillars with vertical walls perpendicular to a substrate. The pillars are of an insulating semiconductor material such as GaN. Disposed on the side surfaces of the pillars is a barrier layer of a semiconductor material such as AlGaN having a bandgap greater than that ... 10/06/05 - 20050221547 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the ... 09/29/05 - 20050214992 - Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes. ... 08/04/05 - 20050170574 - Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof Transistors are fabricated by forming a nitride-based semiconductor barrier layer on a nitride-based semiconductor channel layer and forming a protective layer on a gate region of the nitride-based semiconductor barrier layer. Patterned ohmic contact metal regions are formed on the barrier layer and annealed to provide first and second ohmic ... 07/28/05 - 20050164436 - Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch A method of forming a relaxed silicon—germanium layer for use as an underlying layer for a subsequent, overlying tensile strain silicon layer, has been developed. The method features initial growth of a underlying first silicon—germanium layer on a semiconductor substrate, compositionally graded to feature the largest germanium content at the ... 06/16/05 - 20050130356 - Method of manufacturing organic electro luminescence panel, manufacturing apparatus of organic electro luminescence panel, and organic electro luminescence panel A method of manufacturing an organic electro luminescence panel in which a part or all of an electro luminescence layer formed of a plurality of layers is formed by vapor-deposition using a vapor-deposition mask is provided. The method comprises disposing the vapor-deposition mask on a given position on a vapor-deposited ... 06/02/05 - 20050118752 - Method of making substrates for nitride semiconductor devices For fabricating an LED substrate with minimal dislocations in its nitride semiconductor layers, GaN is epitaxially grown into a first formative layer overlying a multilayered buffer region on a silicon substrate. A second formative layer is then formed on the first formative layer by epitaxially growing AlN, at such a ... ### FreshPatents.com Support |