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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Schottky Gate (e.g., Mesfet, Hemt, Etc.) Having Schottky Gate (e.g., Mesfet, Hemt, Etc.)Having Schottky Gate (e.g., Mesfet, Hemt, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087493 - Trench schottky device with single barrier A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal barrier layer over the full upper surface of the wafer including the trench interiors and the mesas ... 02/22/07 - 20070042538 - Methods for preserving strained semiconductor substrate layers during cmos processing Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be formed with little or no consumption of surface silicon. These oxides, such as screening oxide and pad ... 02/01/07 - 20070026590 - Dynamic schottky barrier mosfet device and method of manufacture A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically ... 12/28/06 - 20060292768 - Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a gate insulating layer, a gate electrode, an oxide layer, and sidewalls. The gate insulating layer is formed on the substrate. The gate electrode includes an upper layer and a lower layer stacked on ... 11/16/06 - 20060258070 - Organic thin film transistor, display device using the same and method of fabricating the same An organic thin film transistor includes a dual gate electrode on a substrate, a gate insulating layer on the dual gate electrode, source and drain electrodes on the gate insulating layer, and an organic semiconductor layer on the source and drain electrodes. ... 10/05/06 - 20060223247 - Schottky junction diode devices in cmos A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that ... 10/05/06 - 20060223246 - Schottky junction diode devices in cmos with multiple wells A Schottky junction diode device having improved performance and a multiple well structure is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped differently, such ... 10/05/06 - 20060223245 - T-gate formation Methods of forming T-gate structures on a substrate are provided that use only UV-sensitive photoresists. Such methods provide T-gate structures using two lithographic steps using a single wavelength of radiation. ... 06/08/06 - 20060121658 - Method of manufacturing field effect transistor Provided is a method of manufacturing a field effect transistor (FET). The method includes steps of: forming an ohmic metal layer on a substrate in source and drain regions; sequentially forming an insulating layer and a multilayered resist layer on the entire surface of the resultant structure and simultaneously forming ... 02/16/06 - 20060035422 - Integrated pet and schottky device A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die. ... 01/26/06 - 20060019435 - Methods of fabricating nitride-based transistors with a cap layer and a recessed gate An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage ... 12/22/05 - 20050282320 - Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate, forming a resist on the semiconductor substrate so that the resist contacts only one side face of the gate electrode, and tilting the gate electrode by shrinking or expanding the resist. ... 09/15/05 - 20050202614 - Laser diode device with nitrogen incorporating barrier In an active region of an optical-electronic semiconductor device, nitrogen is incorporated in a barrier adjacent a GaNAs-based (e.g., GaInNAs) quantum well to improve device performance at wavelength bands above 1.2 microns. In a specific example embodiment, a mirror or cladding layer is grown over the active region in a ... 09/15/05 - 20050202613 - T-gate formation Methods of forming T-gate structures on a substrate are provided that use only UV-sensitive photoresists. Such methods provide T-gate structures using two lithographic steps using a single wavelength of radiation. ... 06/30/05 - 20050142709 - Method for fabricating field effect transistor Provided is a method for fabricating a filed effect transistor, the method comprising: depositing a first semiconductor layer and a second semiconductor layer on a substrate in sequence, which have a different bandgap from each other, and patterning the second semiconductor layer to have a mesa structure; forming a first ... 06/23/05 - 20050136577 - Microelectronic device fabrication method In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metallic contact ... 06/09/05 - 20050124100 - Electronic device comprising enhancement mode phemt devices, depletion mode phemt devices, and power phemt devices on a single substrate and method of creation The present invention comprises an integrated circuit fabricated on a single substrate where the integrated circuit comprises a first block comprising an enhancement mode pHEMT transistor on a substrate; a second block comprising a depletion mode pHEMT transistor on the substrate, the second block operatively connected to the first block; ... ### FreshPatents.com Support |