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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > Having Schottky Gate (e.g., Mesfet, Hemt, Etc.)
Having Schottky Gate (e.g., Mesfet, Hemt, Etc.)Having Schottky Gate (e.g., Mesfet, Hemt, Etc.) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.
06/05/14 - 20140154847 - Spatial orientation of the carbon nanotubes in electrophoretic deposition process
This method offers opportunity to produce oriented arrays of individual nanotubes, which opens up a new technique for fabrication and mass production of nanotube-based devices and circuits. Several such devices are considered. These are MESFET- and MOSFET-like transistors and CMOS-like voltage inverter....
05/16/13 - 20130122669 - Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the...
06/09/11 - 20110136304 - Techniques to enhance selectivity of electrical breakdown of carbon nanotubes
Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than...