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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate > Including Recrystallization Step Including Recrystallization StepIncluding Recrystallization Step patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087492 - Method for forming semiconductor film, method for manufacturing semiconductor device and electrooptic device, apparatus for performing the same, and semiconductor device and electrooptic device An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus ... 04/05/07 - 20070077696 - Laser irradiation method and laser irradiation apparatus An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the ... 03/22/07 - 20070065998 - Polysilicon thin film fabrication method A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is ... 03/01/07 - 20070048915 - Method for forming a thin film transistor A method for forming a thin film transistor. A buffer layer is formed on a substrate. A single crystal layer is formed on the buffer layer. An amorphous layer is formed on the single crystal layer. The amorphous layer is transferred to a crystallized layer by laser annealing. A gate ... 02/15/07 - 20070037332 - Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device In order to solve the problem, a pulsed laser beam 1 having a wavelength absorbed sufficiently in the semiconductor film is used in combination with a laser beam 2 having a high output and having a wavelength absorbed sufficiently in the melted semiconductor film. After irradiating the laser beam 1 ... 02/15/07 - 20070037331 - Laser irradiation method, laser irradiation apparatus, and semiconductor device An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor ... 02/15/07 - 20070037330 - Evaluation method of semiconductor device, manufacturing method of the semiconductor device, design management system of device comprising the semiconductor device, dose amount control program for the semiconductor device, computer-readable recording medi There is provided a new method of obtaining the dopant activation rate of a device accurately and simply in a different way from a method of obtaining a carrier density with use of a Hall measurement or CV measurement, and also provided a production method of a device performed with ... 02/01/07 - 20070026589 - Method and apparatus for stacking sheets, and method and apparatus for manufacturing liquid crystal display panel A broad crystal display panel having a color filter substrate is supported by supporting nails and the middle portion of a supporting span is pressed by a loading bar. From this state, the supporting nails are removed to release the supporting, and subsequently the supporting nails are also removed to ... 02/01/07 - 20070026588 - Method of fabricating a thin film transistor A method of fabricating a thin film transistor is provided. An amorphous silicon layer is formed on a substrate. Then, the amorphous silicon layer is transformed into a polysilicon layer. After that, a heat process is performed for repairing the lattice defects of the polysilicon layer. Then, an ion implantation ... 01/04/07 - 20070004111 - Method and apparatus for forming a crystalline silicon thin film A hydrogen gas is supplied into a deposition chamber (10) accommodating a silicon sputter target (2) and a deposition target substrate (S), a high-frequency power is applied to the gas to generate plasma exhibiting Hα/SiH* from 0.3 to 1.3 in the deposition chamber, and chemical sputtering is effected on the ... 01/04/07 - 20070004110 - Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device An optical system (in FIGS. 1A and 1B) wherein a rectilinear laser beam of homogeneous energy distribution is defined for annealing a non-single crystalline semiconductor film (a surface to-be-irradiated 1108), is constructed of reflectors (1106, 1107 etc.) easily and inexpensively without including lenses of transmission type. The rectilinear laser beam ... 12/07/06 - 20060275965 - Plasma display device with improved heat dissipation efficiency A plasma display device comprises: a plasma display panel for displaying an image; a chassis base mounted on a rear surface of the plasma display panel; a driving circuit unit mounted on a surface of the chassis base opposite to the plasma display panel; a signal transmitting device which electrically ... 11/30/06 - 20060270130 - Semiconductor device and method for manufacturing the same Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where ... 11/30/06 - 20060270129 - Method for crystallizing amorphous semiconductor thin film by epitaxial growth using non-metal seed and method for fabricating poly-crystalline thin film transistor using the same A method for crystallizing an amorphous semiconductor thin film using a non-metal seed epitaxial growth (NSEG) is provided. The method includes the steps of: forming a pair of non-metal seeds for inducing a crystallization of an amorphous semiconductor thin film at a predetermined distance on a transparent insulation substrate; depositing ... 11/23/06 - 20060263957 - Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, ... 11/16/06 - 20060258069 - Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries ... 11/09/06 - 20060252189 - Method and apparatus for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The ... 10/05/06 - 20060223244 - Method of manufacturing orientation film and method of manufacturing liquid discharge head A method of manufacturing an orientation film which method is suitable for manufacturing an orientation film containing a ceramic at low cost. The method includes the steps of: (a) forming a ceramic film on a seed substrate in which crystal orientation is controlled at least on a surface thereof by ... 08/31/06 - 20060194377 - Laser process where N is the number of shots of the pulsed laser beam. ... 08/24/06 - 20060189052 - Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer to a second thickness less than the first thickness and crystallizing the etched semiconductor layer in a ... 08/17/06 - 20060183276 - Method of manufacturing a semiconductor device After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that ... 08/17/06 - 20060183275 - Method and system for implementing film grain insertion Aspects of a system and method for processing video data may comprise, for each line of a field of an image, generating noise based on a current seed, inserting the generated noise in a current line of the field, and generating a new seed for processing a subsequent line of ... 08/10/06 - 20060177974 - Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by ... 08/10/06 - 20060177973 - Generation method of light intensity distribution, generation apparatus of light intensity distribution, and light modulation element assembly A generation method of a light intensity distribution uses a first light modulation element and a second light modulation element which are arranged to be apart from each other by a distance D and face each other in parallel to optically modulate a light beam which enters the light modulation ... 07/27/06 - 20060166418 - Method of fabricating semiconductor device Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface ... 06/08/06 - 20060121657 - Method for manufacturing a semconductor device A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is ... 06/08/06 - 20060121656 - Methods of manufacturing semiconductor devices An example method of manufacturing a semiconductor device includes sequentially forming a gate insulating layer and a polysilicon layer on a semiconductor substrate having a first conductivity type, forming an amorphous silicon layer on a surface of the polysilicon layer by making the surface of the polysilicon layer amorphous, forming ... 06/08/06 - 20060121655 - Method of crystallizing amorphous semiconductor thin film and method of fabricating poly crystalline thin film transistor using the same A method of crystallizing an amorphous semiconductor thin film used for a thin film transistor (TFT) is provided. The method includes the steps of: forming first and second crystallization induced metal patterns locally in respective portions of a source region and a drain region of the TFT on an amorphous ... 05/25/06 - 20060110869 - Semiconductor device including a tft having large-grain polycrystalline active layer, lcd employing the same and method of fabricating them A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in ... 04/13/06 - 20060079041 - Manufacturing method for a semiconductor device Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size ... 04/13/06 - 20060079040 - Laser processing unit, laser processing method, and method for manufacturing semiconductor device Objects of the present invention is to reduce a number of scanning a linear laser, to shorten the amount of time for laser annealing, and to reduce a manufacturing process, a manufacturing time, and manufacturing cost of a semiconductor device. In this invention, a gas at high temperature is locally ... 04/06/06 - 20060073648 - Thin film transistor and method of fabricating the same Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned ... 03/23/06 - 20060063315 - Method for fabricating thin film transistor A method of fabricating a thin film transistor can include forming a metal catalyst layer on a substrate on which an amorphous silicon layer and a capping layer are formed. The metal catalyst may be formed using a sputtering target in which a composition ratio of the metal catalyst is ... 03/09/06 - 20060051912 - Method and apparatus for a stacked die configuration A stacked die configuration for use in an IC package includes a first IC die mechanically coupled to a substrate material. Mechanically coupled to the first IC die is an interposer having an aperture adapted to receive a second IC die. Mechanically coupled to the first IC die and fitting ... 03/09/06 - 20060051911 - Large-grain p-doped polysilicon films for use in thin film transistors A method is disclosed to form a large-grain, lightly p-doped polysilicon film suitable for use as a channel region in thin film transistors. The film is preferably deposited lightly in situ doped with boron atoms by an LPCVD method at temperatures sufficiently low that the film is amorphous as deposited. ... 03/02/06 - 20060046363 - Process for producing semiconductor device A semiconductor device fabricating method includes forming an amorphous silicon film on a substrate irradiating the amorphous silicon film with laser light to transform at least a part of the amorphous silicon film into a polycrystalline silicon film, and oxidizing the surface of the polycrystalline silicon film in an atmosphere ... 02/23/06 - 20060040436 - Method and apparatus forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed ... 02/02/06 - 20060024870 - Manufacturing method for low temperature polycrystalline silicon cell A manufacturing method for low temperature polycrystalline silicon cell, including steps of: forming a buffer layer on a substrate; depositing a-Si:H on the buffer layer; baking and dehydrogenating the a-Si:H; melting and crystallizing the a-Si into Poly-Si by means of laser; defining a Poly-Si island via photolithography; depositing a gate ... 01/19/06 - 20060014337 - Semiconductor device and method for manufacturing the same A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly parallel to a current-flow between a source ... 01/12/06 - 20060008957 - Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and ... 01/05/06 - 20060003506 - Crystallization method and apparatus thereof A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and second regions, performing a first crystallization by irradiating a laser beam on the first region of the amorphous ... 12/29/05 - 20050287726 - Method of crystallizing amorphous semiconductor thin film and method of fabricating poly-crystalline thin film transistor using the same A method of crystallizing an amorphous semiconductor thin film formed on a substrate is provided. The method includes the steps of: forming a gate insulation film and a gate electrode on an amorphous semiconductor thin film; locally forming first and second crystallization induced metal patterns for inducing crystallization of the ... 12/22/05 - 20050282319 - Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the ... 12/15/05 - 20050277236 - Method for manufacturing semiconductor device It is an object of the present invention to control the position in crystal lateral growth of a semiconductor film without making a system cumbersome and complicated. A method for manufacturing a semiconductor device according to the present invention includes the step of forming a semiconductor film over an insulating ... 12/15/05 - 20050277235 - Methods of manufacturing semiconductor devices having single crystalline silicon layers and related semiconductor devices Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed layer. The first non-single crystalline silicon layer is irradiated ... 11/17/05 - 20050255640 - Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated ... 11/10/05 - 20050250267 - Method of heat treating thin film transistor using metal induced lateral crystallization A method of heat treating a thin film transistor using a metal induced lateral crystallization (MILC) method is provided, which does not deteriorate performance of a poly-silicon thin film transistor and can perform a MILC heat treatment at lower cost, in forming the poly-silicon thin film transistor by the MILC ... 10/27/05 - 20050239240 - Process for fabricating semiconductor device A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense ... 10/27/05 - 20050239239 - Thin-film transistor and method of fabricating the same There is provided a thin-film transistor being capable of reducing dispersion in threshold voltage and a method of fabricating the same. The thin-film transistor includes an insulating undercoating layer formed for a substrate, a semiconductor active layer of polycrystalline silicon formed on the insulating undercoating layer, and a gate electrode ... 10/20/05 - 20050233512 - Method of manufacturing a semiconductor device In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is ... 10/20/05 - 20050233511 - Laser mask and method of crystallization using the same Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N×M active regions are defined; positioning a laser mask having first and second blocks over the substrate, wherein the first and second blocks ... 10/20/05 - 20050233510 - Semiconductor device, electro-optical device, integrated circuit and electronic equipment A method of manufacturing a semiconductor device includes an origin part forming process in order to form a plurality of origin parts, each of which serves as an origin for crystallization of a semiconductor film on a substrate, a semiconductor film forming process to form the semiconductor film on the ... 10/13/05 - 20050227422 - Semiconductor device and manufacturing method of the same Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a ... 09/29/05 - 20050214991 - Method and apparatus for producing semiconductor device An amorphous silicon film is formed on a flat glass substrate, and then crystallized by heating to obtain a crystalline silicon film. The glass substrate is placed on a stage having a convex U-shaped curved surface. The glass substrate is heated for a desired period of time at a temperature ... 09/22/05 - 20050208714 - Method of manufacturing a semiconductor device and manufacturing system thereof A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film. ... 09/22/05 - 20050208713 - Liquid crystal display device and method for fabricating the same A method for fabricating a liquid crystal display device, which includes a liquid crystal layer, a pair of electrodes for use to apply a voltage to the liquid crystal layer, and at least one inorganic alignment film. The inorganic alignment film makes direct contact with the liquid crystal layer and ... 09/15/05 - 20050202612 - Thin film transistor and method of manufacturing the same An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the ... 09/15/05 - 20050202611 - Method of laser irradiation A method of laser irradiation including reflecting a linear laser beam from a mirror to bend an optical path of the laser beam, adjusting a width of the laser beam in the short axis direction of the laser beam whose optical path is bent by the mirror, by a short ... 09/01/05 - 20050191799 - Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode which is ... 09/01/05 - 20050191798 - Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode which is ... 08/25/05 - 20050186720 - Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon film at a predetermined temperature in an H2O ... 08/18/05 - 20050181553 - Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser ... 08/11/05 - 20050176190 - Alloying method, and wiring forming method, display device forming method, and image unit fabricating method An alloying method includes the steps of forming a metal layer on a semiconductor having been transferred to a material having a low thermal conductivity, and alloying an interface between the semiconductor and the metal layer by irradiating the interface with a laser beam having a wavelength absorbable in at ... 08/11/05 - 20050176189 - Method of forming single crystal silicon thin film using sequential lateral solidification (sls) Provided is a method of forming a single crystal silicon thin film using an SLS method and a patterned grain boundary filtering region. The method of forming a single crystal silicon thin film by crystallizing an amorphous silicon layer deposited on a substrate, includes patterning the amorphous silicon layer to ... 08/04/05 - 20050170573 - Semiconductor device and method of manufacturing the same Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency ... 08/04/05 - 20050170572 - Laser annealing apparatus and annealing method of semiconductor thin film using the same A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the ... 07/21/05 - 20050158930 - Method of manufacturing a semiconductor device A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions ... 07/21/05 - 20050158929 - Semiconductor device and method for manufacturing the same There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed ... 07/21/05 - 20050158928 - Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization A method of fabricating a thin film transistor with multiple gates using a SGS process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a thin film transistor using super grain silicon (SGS) crystallization comprising a semiconductor layer formed on ... 07/14/05 - 20050153491 - Process of forming low-strain(relaxed) silicon geranium crystal layer A process of forming a low-strain crystal layer having low cell dislocation, low surface roughness and low thickness comprises: forming at least one crystal layer on a substrate; patterning the crystal layer by exposure and development to form an ion-doping region; doping ions in the ion-doping region of the crystal ... 06/30/05 - 20050142708 - Method for forming polycrystalline silicon film Disclosed herein is a method for forming a polycrystalline (poly-Si) film by the crystallization of an amorphous silicon film using laser light irradiation. The disclosed method comprises the steps of: sequentially depositing a buffer film and an amorphous silicon film on a glass substrate; depositing a metal film having laser ... 06/30/05 - 20050142707 - Method of crystallizing/activating polysilicon layer and method of fabricating thin film transistor having the same polysilicon layer Provided is a method of crystallizing/activating a polysilicon layer and a method of fabricating a thin film transistor having the same polysilicon layer, in which when a gate material is patterned to form a gate electrode and define source/drain regions, the gate material on source/drain regions partially remains, so that ... ### FreshPatents.com Support |