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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate > Adjusting Channel Dimension (e.g., Providing Lightly Doped Source Or Drain Region, Etc.) Adjusting Channel Dimension (e.g., Providing Lightly Doped Source Or Drain Region, Etc.)Adjusting Channel Dimension (e.g., Providing Lightly Doped Source Or Drain Region, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/07/06 - 20060275964 - Semiconductor device and method for fabricating the same A MIS-type semiconductor device includes a p-type semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and n-type diffused source and drain layers formed in regions of the semiconductor substrate located below both sides of the gate electrode. Insides ... 09/21/06 - 20060211185 - Method for manufacturing transistor in semiconductor device Disclosed herein is a method for manufacturing a transistor in a semiconductor device, which can improve the refresh characteristics of the device. The method comprises the steps of: providing a silicon substrate having active and field regions defined thereon; performing a first channel ion implantation process into the silicon substrate; ... 09/14/06 - 20060205126 - Method for fabricating metal oxide semiconductor with lightly doped drain A method for fabricating metal oxide semiconductor with lightly doped drain. In the method, the gate electrode, the LDD of the n-type MOS TFT, and the source/drain electrode of the p-type MOS TFT are defined simultaneously in one photolithography step. The contact holes and the source/drain electrode of the n-type ... 05/25/06 - 20060110868 - Production of lightly doped drain of low-temperature poly-silicon thin film transistor A method is disclosed to make a lightly doped drain of a low-temperature poly-silicon thin film transistor. Nitrogen is implanted during steps of doping the source and the drain so as to suppress the spreading of the other types of dope so that the poly-silicon layer forms a shallow interface ... 03/02/06 - 20060046362 - Integrated circuit devices with high and low voltage components and processes for manufacturing these devices The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on the dielectric layer. A first region of the gate material layer is doped to a first nonzero level ... 01/12/06 - 20060008955 - Semiconductor device, method of manufacturing the same, and electro-optical device The present invention is directed to a method of manufacturing a semiconductor device including a semiconductor layer having a heavily doped source region, a heavily doped drain region, a lightly doped source region, a lightly doped drain region and a channel region, and a gate electrode opposite to the semiconductor ... 12/08/05 - 20050272189 - Method of manufacturing thin film transistor array panel A method of manufacturing a thin film transistor array panel is provided, which includes forming a semiconductor layer of poly silicon, forming a gate insulating layer on the semiconductor layer, forming a conductive layer including a first metal layer and a second metal layer formed on the first metal layer, ... 11/10/05 - 20050250266 - Semiconductor device having a gate oxide film with some ntfts with ldd regions and no ptpts with ldd regions A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the ... 11/10/05 - 20050250265 - Method of fabricating poly-silicon thin film transistor using metal induced lateral crystallization A method of fabricating a thin film transistor using a metal induced lateral crystallization is provided. The thin film transistor fabrication method includes the steps of: forming an amorphous silicon film on an insulation substrate, and then patterning the amorphous silicon film, to thereby form a semiconductor layer; sequentially forming ... 08/18/05 - 20050181552 - Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device. A plurality of device separation regions are formed in an SOI layer of an SOI substrate, a desired impurity is implanted into a body portion of an Si active layer region, and therereafter a gate electrode is formed with a gate ... 07/14/05 - 20050153489 - Semiconductor device and method for manufacturing the same A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in ... ### FreshPatents.com Support |