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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate > Including Source Or Drain Electrode Formation Prior To Semiconductor Layer Formation (i.e., Staggered Electrodes) Including Source Or Drain Electrode Formation Prior To Semiconductor Layer Formation (i.e., Staggered Electrodes)Including Source Or Drain Electrode Formation Prior To Semiconductor Layer Formation (i.e., Staggered Electrodes) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/18/07 - 20070015323 - Semiconductor device and method of manufacturing the same An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing ... 07/27/06 - 20060166417 - Transistor having high mobility channel and methods Methods and resulting structure of forming a transistor having a high mobility channel are disclosed. In one embodiment, the method includes providing a gate electrode including a gate material area and a gate dielectric, the gate electrode being positioned over a channel in a silicon substrate. A dielectric layer is ... 06/29/06 - 20060141688 - Method for producing insulated gate thin film semiconductor device An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 μm or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral ... 12/29/05 - 20050287725 - Plasma processing method, plasma processing apparatus, and computer recording medium According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied ... 08/18/05 - 20050181551 - Method of fabricating a light emitting device There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that ... ### FreshPatents.com Support |