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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate > Vertical Channel Vertical ChannelVertical Channel patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/28/06 - 20060292764 - Method of manufacturing a vertical mos transistor In a method of manufacturing a vertical MOS transistor, a body region, a trench, a gate oxide film, a gate electrode, a source region, and a body contact region are successively formed in a semiconductor substrate. An intermediate insulating film is deposited over a main surface of the semiconductor substrate ... 06/08/06 - 20060121654 - Transistor assembly and method of its fabrication A transistor assembly with semiconductor material vertically introduced into micro holes (4) in a pliable a film laminate consisting of two plastic films (1, 3) with a metal layer (2) located therebetween. Said semiconductor material is provided with contacts (6, 7) by metalizing the top side and bottom side of ... 09/15/05 - 20050202606 - Semiconductor device and method of forming the same A semiconductor device including a resistor and a method of forming the same. In the semiconductor device, a conductive pattern, which connects source regions, and a resistor are formed of the same material, which can be polysilicon. In the method, the conductive pattern and the resistor are simultaneously formed. Thus, ... ### FreshPatents.com Support |