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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate > And Additional Electrical Device On Insulating Substrate Or Layer And Additional Electrical Device On Insulating Substrate Or LayerAnd Additional Electrical Device On Insulating Substrate Or Layer patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/08/07 - 20070032001 - Semiconductor device having a trench isolation and method of fabricating the same The present invention provides a method of fabricating a semiconductor device in which deterioration in a transistor characteristic is prevented by preventing a channel stop implantation layer from being formed in an active region. A resist mask is formed so as to have an opening over a region in which ... 01/04/07 - 20070004106 - Technique for perfecting the active regions of wide bandgap semiconductor nitride devices This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of ... 12/21/06 - 20060286727 - Polycrystalline silicon liquid crystal display device and fabrication method thereof A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a ... 06/29/06 - 20060141687 - Methods of forming semiconductor constructions The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory devices can be incorporated within semiconductor-on-insulator (SOI) constructions. The base region of the bipolar device can be physically and electrically connected to one of ... 04/13/06 - 20060079035 - Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus A method of manufacturing a thin film semiconductor device which includes a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a lower electrode that conductively connects a second ... 02/16/06 - 20060035421 - Semiconductor device and method therefore Where the silicon active layer of an SOI substrate is used as a resistor, it is difficult to form small wells densely in a semiconductor support substrate portion under the resistor because of the presence of a buried insulation film. It is also difficult to control the potential division of ... 01/19/06 - 20060014335 - Method of manufacturing a semiconductor device Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order ... 10/20/05 - 20050233508 - Semiconductor device and method of manufacturing the same In a semiconductor device having a semiconductor element having a plurality of SOI-Si layers, the height of element isolation regions from the surface of the semiconductor substrate are substantially equal to each other. Alternatively, the element isolation regions are formed at the equal height on the semiconductor substrate and then ... 09/29/05 - 20050214990 - Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the ... 09/29/05 - 20050214989 - Silicon optoelectronic device An optoelectronic integrated circuit is fabricated by forming isolation trenches in a SOI structure to form at least first and second areas of silicon, by forming a first silicon island over the first silicon area during a first silicon forming step such that the first silicon island forms at least ... 08/11/05 - 20050176185 - Fabrication method of thin-film transistor array with self-organized organic semiconductor The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer ... 08/04/05 - 20050170569 - Apparatus for manufacturing flat panel display devices A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. ... ### FreshPatents.com Support |