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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate > Combined With Electrical Device Not On Insulating Substrate Or Layer > Complementary Field Effect Transistors Complementary Field Effect TransistorsComplementary Field Effect Transistors patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/11/07 - 20070010048 - Semiconductor-on-insulator (soi) strained active areas Differentially strained active regions for forming strained channel semiconductor devices and a method of forming the same, the method including providing a semiconductor substrate comprising a lower semiconductor region, an insulator region overlying the lower semiconductor region and an upper semiconductor region overlying the insulator region; forming a doped area ... 09/07/06 - 20060199318 - Semiconductor device and method for fabricating the same The semiconductor device comprises a gate interconnection 24a including a gate electrode formed over a semiconductor substrate 14 with a gate insulation film 22 formed therebetween; a first source/drain diffused layer 28 formed near the end of the gate interconnection 24a; a second source/drain diffused layer 34 formed remote from ... 07/27/06 - 20060166416 - Addition of ballast hydrocarbon gas to doped polysilicon etch masked by resist A chemical composition and method for providing uniform and consistent etching of gate stacks on a semiconductor wafer, whereby the composition includes an etchant and an added ballast gas added. The gate stacks are formed using this combined etchant and ballast gas composition. The ballast gas may either be similar ... 03/16/06 - 20060057787 - Strained finfet cmos device structures A semiconductor device structure, includes a PMOS device 200 and an NMOS device 300 disposed on a substrate 1,2, the PMOS device including a compressive layer 6 stressing an active region of the PMOS device, the NMOS device including a tensile layer 9 stressing an active region of the NMOS ... 11/17/05 - 20050255639 - Complementary thin film transistor circuit, electro-optical device, and electronic apparatus A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using a plurality of single crystal grains, the plurality of single crystal grains being formed substantially centered on each of a plurality of starting-point portions disposed on an insulating surface of a substrate, the plurality of single ... 07/14/05 - 20050153488 - Semiconductor device and method of fabricating the same Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs ... ### FreshPatents.com Support |