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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) > Having Insulated Gate Having Insulated GateHaving Insulated Gate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082436 - Method of fabricating reflection type liquid crystal display A liquid crystal display device includes (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a transistor formed on the first substrate, (e) a wiring layer formed on the first ... 03/15/07 - 20070059868 - Thin film transistor manufacturing method and substrate structure A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure ... 03/01/07 - 20070048913 - Method of manufacturing a stacked semiconductor device In a method of manufacturing a stacked semiconductor device, a seed layer including impurity regions may be prepared. A first insulation interlayer pattern having a first opening may be formed on the seed layer. A first SEG process may be carried out to form a first plug partially filling the ... 03/01/07 - 20070048912 - Method of forming single crystalline silicon layer, structure including the same, and method of fabricating thin film transistor using the same Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of forming the single crystalline silicon layer includes forming a silicon nitride layer on a substrate, forming an insulating layer ... 03/01/07 - 20070048911 - Etching tape and method of fabricating array substrate for liquid crystal display using the same A method of fabricating a liquid crystal display array substrate includes forming a gate wiring line having a gate pad electrode, forming a data wiring line having a data pad electrode, forming a protection layer over the gate pad electrode and the data pad electrode, and positioning etching tapes on ... 02/15/07 - 20070037328 - Method of manufacturing a non-volatile memory device A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion ... 02/15/07 - 20070037327 - Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor A shielded gate trench FET is formed as follows. A trench is formed in a silicon region of a first conductivity type, the trench including a shield electrode insulated from the silicon region by a shield dielectric. An inter-poly dielectric (IPD) including a layer of thermal oxide and a layer ... 02/15/07 - 20070037326 - Shallow source/drain regions for cmos transistors A transistor having shallow, high-dopant concentration source/drain regions is provided. A gate electrode is formed on a substrate, and the source/drain regions of the substrate are transformed into an amorphous state by, for example, implanting Si, Ge, Xe, In, Ar, Kr, Rn, a combination thereof, or the like ions. A ... 02/01/07 - 20070026585 - Patterned-print thin-film transistors with top gate geometry A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to ... 02/01/07 - 20070026584 - Dielectric isolated body biasing of silicon on insulator The present invention provides, in one aspect, a microelectronics device 100 that includes a silicon on insulator (SOI) region 110 located over a microelectronics substrate 115. The SOI region 110 comprises a first dielectric layer 120 located over the microelectronics substrate 115, a biasing layer 125 located over the first ... 01/25/07 - 20070020826 - Method for manufacturing semiconductor device It is an object of the invention to provide a technique forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configuration of the invention is that a first semiconductor region ... 01/25/07 - 20070020825 - Method of manufacturing thin film transistor substrate A method of manufacturing a thin film transistor (TFT) substrate to minimize a rugged surface of an organic layer overlapping with a storage electrode is provided. The method includes forming a passivation layer on a substrate having a storage electrode and an organic layer covering the passivation layer, forming a ... 01/25/07 - 20070020824 - Multi-layered complementary conductive line structure and manufacturing method thereof and manufacturing method of a thin film transistor display array A multi-layered complementary conductive line structure, a manufacturing method thereof and a manufacturing method of a TFT (thin film transistor) display array are provided. The process of TFT having multi-layered complementary conductive line structures does not need to increase the mask number in comparison with the currently process and is ... 01/11/07 - 20070010047 - Semiconductor device and manufacturing method thereof The objectives of the present invention are achieving TFTs having a small off current and TFT structures optimal for the driving conditions of a pixel portion and driver circuits, and providing a technique of making the differently structured TFTs without increasing the number of manufacturing steps and the production costs. ... 12/28/06 - 20060292762 - Replacement gate field effect transistor with germanium or sige channel and manufacturing method for same using gas-cluster ion irradiation A self-aligned MISFET transistor (500H) on a silicon substrate (502), but having a graded SiGe channel or a Ge channel. The channel (526) is formed using gas-cluster ion beam (524) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based ... 12/21/06 - 20060286726 - Forming interconnects A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localized region of the insulating layer so as ... 12/21/06 - 20060286725 - Method for manufacturing thin film transistors A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a gate electrode, a gate insulator, an active channel layer, a drain electrode, and a source electrode on a substrate. ... 12/14/06 - 20060281235 - Process for fabricating a thin film semiconductor device, thin film semiconductor device, and liquid crystal display A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using ... 12/14/06 - 20060281234 - Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device. In the method, a substrate is prepared, which includes a buried oxide film and a SiGe layer formed on the buried oxide film. Then, heat treatment is performed on the substrate at a temperature equal to or lower than a first temperature, to ... 11/30/06 - 20060270126 - Semiconductor device and method of manufacturing the same Plural trench isolation films are provided with portions of an SOI layer interposed therebetween in a surface of the SOI layer in a resistor region (RR) where a spiral inductor (SI) is to be provided. Resistive elements are formed on the trench isolation films, respectively. Each of the trench isolation ... 11/30/06 - 20060270125 - Method for manufacturing semiconductor device and mos field effect transistor Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming area provided in a semiconductor layer formed on an insulator, and a body region, (a) ion implantation of Ar in ... 11/30/06 - 20060270124 - Thin film transistor and method of fabricating thin film transistor substrate Provided are a thin film transistor (TFT) capable of increasing ON current and decreasing OFF current values, a TFT substrate having the polysilicon TFT, a method of fabricating the polysilicon TFT, and a method of fabricating a TFT substrate having the polysilicon TFT. The polysilicon TFT substrate includes a gate ... 11/23/06 - 20060263956 - Thin film transistor and method for fabricating the same A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin ... 11/23/06 - 20060263955 - Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same. In order to achieve the object, the design of a second mask ... 11/23/06 - 20060263954 - Method of forming thin film transistor A method of forming a thin film transistor on a substrate. The method comprises forming a pattern layer on the substrate, forming a gate dielectric layer over the pattern layer, forming a first conductor pattern on the gate dielectric layer, forming an interlayer dielectric layer on the first conductor layer ... 11/23/06 - 20060263953 - Method of fabricating substrateless thin film field-effect devices and an organic thin film transistor obtainable by the method A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, S and a gate electrode (G) insulated from the channel region, is described. The method ... 11/16/06 - 20060258065 - Method of fabricating polysilicon film Method of fabricating polysilicon film includes forming insulating layer, first amorphous silicon layer, and cap layer over a substrate. An annealing is performed to transform the first amorphous silicon layer into first polysilicon layer with at least a hole. The cap layer is removed. A portion of the insulating layer ... 11/09/06 - 20060252187 - Method of forming a pseudo soi substrate and semiconductor devices The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a depth, forming a layer of insulating material ... 11/02/06 - 20060246640 - Method for manufacturing semiconductor device The present invention provides a manufacturing method of a semiconductor device at low cost and with high reliability. According to one feature of a method for manufacturing a semiconductor device includes the steps of forming a metal film over a substrate; forming a metal oxide film over the surface of ... 11/02/06 - 20060246639 - Thin film transistor and method of fabricating the same A thin film transistor (TFT) and a method of fabricating the same, in which a fabrication process is simplified and damage to a gate insulating layer is decreased. The method of fabricating the TFT includes forming at least one buffer layer on a substrate, forming a first semiconductor layer formed ... 10/12/06 - 20060228839 - Methods for fabricating array substrates Methods for fabricating array substrates are provided. A method for fabricating an array substrate includes forming a first metal layer over a substrate and then patterned by a first photolithography to forming a gate line, a gate electrode connecting the gate line, and a pad over the substrate. An insulating ... 09/07/06 - 20060199317 - Thin film transistor and method for production thereof The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed ... 09/07/06 - 20060199316 - Fabrication method of a low-temperature polysilicon thin film transistor An LTPS-TFT structure comprises a gate, a gate dielectric layer, a patterned silicon layer, a patterned insulating layer, an ohmic contact layer and a source/drain layer. The gate and the gate dielectric layer are disposed on the substrate. The patterned silicon layer and the patterned insulating layer are disposed on ... 08/31/06 - 20060194375 - Semiconductor device and method of manufacturing thereof To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. ... 08/24/06 - 20060189049 - Four-transistor schmitt trigger inverter A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an ... 08/24/06 - 20060189048 - Method to strain nmos devices while mitigating dopant diffusion for pmos using a capped poly layer The present invention facilitates semiconductor fabrication by providing methods of fabrication that apply tensile strain to channel regions of devices while mitigating unwanted dopant diffusion, which degrades device performance. Source/drain regions are formed in active regions of a PMOS region (102). A first thermal process is performed that activates the ... 08/03/06 - 20060172475 - Ultrathin soi transistor and method of making the same A method of fabricating an ultrathin SOI memory transistor includes preparing a substrate, including forming an ultrathin SOI layer of the substrate; adjusting the threshold voltage of the SOI layer; depositing a layer of silicon oxide on the SOI layer; patterning and etching the silicon oxide layer to form a ... 08/03/06 - 20060172474 - Method for fabricating a semiconductor device A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process ... 08/03/06 - 20060172473 - Method of forming a two-layer gate dielectric A substrate is provided, and a silicon dioxide thin film is formed thereon. Subsequently, an amorphous silicon thin film is formed over the silicon dioxide thin film, and a low temperature plasma nitridation process is preformed to form a nitrogen-containing amorphous silicon thin film. Following that, an oxygen annealing process ... 07/27/06 - 20060166415 - Two-transistor tri-state inverter A two-transistor tri-state inverter is provided, made from a NMOS dual-gate thin-film transistor (DG-TFT) having a top gate, a back gate, and source/drain regions. A PMOS DG-TFT also has a top gate, a back gate, and S/D regions, and the NMOS first S/D region is connected to a PMOS first ... 07/20/06 - 20060160283 - Method of fabricating a liquid crystal display device A method of fabricating a liquid crystal display device comprises the following steps. A first N-type LDD (Lightly Doped Drain) and a second N-type LDD are formed in a semiconductor layer by tilted ion implantation with a gate electrode serving as a mask. The two N-type LDDs are adjacent to ... 07/13/06 - 20060154408 - Method of forming channel region of tft composed of single crystal si A method of forming a high quality channel region of a TFT by forming a large size monocrystalline silicon thin film using a patterned metal mask and a grain boundary filtering region is provided. The method includes sequentially stacking a first buffer layer and an amorphous silicon layer on a ... 07/06/06 - 20060148141 - Method of manufacturing a flexible thin film transistor array panel including plastic substrate A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the gate line, and a semiconductor layer, firstly etching the semiconductor layer; secondly etching the semiconductor layer, forming a data line ... 07/06/06 - 20060148140 - Method for forming a silicon oxynitride layer A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge ... 07/06/06 - 20060148139 - Selective second gate oxide growth The invention comprises a method of dual oxide gate formation comprising the steps of forming a first gate oxide and forming a second gate oxide using in-situ steam generation oxidation. ... 06/29/06 - 20060141686 - Copper gate electrode of liquid crystal display device and method of fabricating the same A copper gate electrode, applied in a thin-film-transistor liquid crystal display (TFT-LCD) device, at least comprises an adhesive layer formed on a glass substrate, and a patterned copper layer formed on the adhesive layer. The adhesive layer at least comprises one of nitrogen and phosphorus (for example, polysilazane) for enhancing ... 06/22/06 - 20060134841 - Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same A method of forming a pattern having a step difference and a method of making a thin film transistor and an LCD device using the method of forming the pattern. The method of forming a pattern having a step difference includes forming a first pattern having a predetermined shape in ... 06/15/06 - 20060128080 - Manufacturing method of semiconductor device The present invention makes it is possible to provide a manufacturing method of a semiconductor device by which damage by plasma process or doping process during a LDD formation process can be reduced as much as possible. Charge density to be stored in a gate electrode and the damage of ... 06/08/06 - 20060121653 - Method for insulating patterns formed in a thin film of oxidizable semi-conducting material A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: formation, on the thin film, of a mask defining, in the thin ... 06/08/06 - 20060121652 - Semiconductor device and method of manufacturing the same In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each ... 06/01/06 - 20060115937 - Devices for an insulated dielectric interface between high-k material and silicon Methods and devices are described for an insulated dielectric interface between a high-k material and silicon for improving electrical characteristics of devices. A method includes forming an oxide layer on a silicon substrate using an in situ steam generation process, etching the oxide layer to form a reduced thickness oxide ... 06/01/06 - 20060115936 - Method of manufacturing semiconductor device with reduced junction leakage current and gate electrode resistance of transistor After a gate electrode made of a material containing a refractory metal is formed, the gate electrode is oxidized to form an oxide film for covering an exposed side surface of the gate electrode, at a predetermined temperature in an initial oxidization phase, and thereafter, the gate electrode is oxidized ... 06/01/06 - 20060115935 - Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device There is provided a method of manufacturing a semiconductor device, the method including: forming a γ-aluminum oxide layer on a semiconductor substrate; forming a semiconductor layer on the γ-aluminum oxide layer; forming an exposed portion for exposing a part of the γ-aluminum oxide layer through the semiconductor layer; forming a ... 05/25/06 - 20060110867 - Field effect transistor manufacturing method Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution ... 05/25/06 - 20060110866 - Method for fabricating thin film transistors Thin film transistor fabrication methods. A gate electrode is formed on a substrate. The surface of metal gate is subjected to a hydrogen plasma treatment to remove a native oxide formed thereon. A nitride layer as a buffer layer is formed to cover the metal gate. A gate insulating layer ... 05/25/06 - 20060110865 - Method of forming ultra thin silicon oxynitride for gate dielectric applications A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon layer is formed over the oxide layer. A ... 05/11/06 - 20060099746 - Mask reduction of lpts-tft array by use of photo-sensitive low-k dielectrics The present invention discloses a method of mask reduction of low-temperature polysilicon thin film transistor array by use of photo-sensitive low-K dielectric, which comprises the steps of: defining a polysilicon-island on a preprocessed glass substrate; forming a gate oxide layer and a first metal layer in sequence; patterning the first ... 05/04/06 - 20060094174 - Method of fabricating a tft device formed by printing A thin-film transistor for an active matrix display is fabricated using printing means, such as a gravure offset printer. First and second pattern layers (251, 252; 30) are formed on a layer structure (4) wherein at least one of the layers is printed. The printed layers (251, 252; 30) mask ... 04/27/06 - 20060088962 - Method of forming a solution processed transistor having a multilayer dielectric Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor having a multilayer dielectric are described. ... 04/13/06 - 20060079034 - Method to form a passivation layer Embodiments of methods, apparatuses, devices, and/or systems for forming a passivation layer are described. ... 04/06/06 - 20060073645 - Manufacturing method of a thin film transistor array panel A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode, forming a gate insulating layer on the gate line, forming a semiconductor stripe on the gate insulating layer; forming ohmic contacts on the semiconductor stripe, forming a data line including a ... 03/30/06 - 20060068534 - Method for manufacturing semiconductor device Laser is applied onto part on an SOS substrate using a sapphire layer to form an identifying mark. The sapphire layer on the surface of the SOS substrate, which has been exposed upon laser application, is covered with an insulating film formed by heat treatment at 700° C. or less, ... 03/09/06 - 20060051909 - Active matrix substrate and manufacturing method thereof, electric optical device and electronic device The invention reduces the resistance of a feed line in a display device (electro-optical device), and reduces the loss in the current supply to a light-emitting element, etc. In an electro-optical device including an electro-optical element and a driver circuit to drive the electro-optical element, a wiring board used for ... 03/09/06 - 20060051908 - Method of fabricating semiconductor device A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode, forming an insulating film for element isolation protruding from a surface of the semiconductor substrate, forming an oxide film on the ... 03/02/06 - 20060046361 - Stripping composition for removing a photoresist and method of manufacturing tft substrated for a liquid crystal display device using the same In a stripping composition for easily removing a photoresist without an adverse effect and a method of manufacturing a TFT substrate for an LCD device using the same, the stripping composition includes acetic acid and ozone gas contained in the acetic acid as a bubble form to remove the photoresist ... 02/23/06 - 20060040435 - Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device ... 02/23/06 - 20060040434 - Method of fabricating thin film transistor A method of fabricating a thin film transistor includes preparing an insulating substrate; forming a first amorphous silicon layer on the substrate; forming a diffusion barrier layer pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the whole surface of the substrate; forming a metal ... 02/23/06 - 20060040433 - Graded semiconductor layer A process for forming a semiconductor device. The process includes forming a template layer for forming a layer of strained silicon. In one example a layer of graded silicon germanium is formed where the germanium is at a higher concentration at the lower portion and at a lower concentration at ... 02/23/06 - 20060040432 - Thin film trnsistor, method for producing a thin film transistor and electronic device having such a transistor A thin film transistor (100) is mounted on a substrate (102), which is covered by a semiconductor layer (120). The semiconductor layer (120) has a first doped region (121) and a second doped region (122) with an undoped region (123) in between. In addition, the semiconductor layer (120) has a ... 02/16/06 - 20060035420 - Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound. ... 02/09/06 - 20060030089 - Method for fabricating polycrystalline silicon thin film transistor A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the ... 01/26/06 - 20060019433 - Thin film transistor structure and method of fabricating the same In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-channel etching (BCE) type TFT device, ... 01/19/06 - 20060014333 - Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film ... 01/05/06 - 20060003505 - Method of fabricating display device A method of fabricating a display device is provided. The method includes providing a substrate having a pixel region and a circuit region located at the periphery of the pixel region. A first semiconductor layer and a second semiconductor layer are formed on the pixel region and on the circuit ... 01/05/06 - 20060003504 - Method of fabricating thin film transistor using metal induced lateral crystallization by etch-stopper layer patterns A method of forming wires of a poly-crystalline TFT by crystallizing an amorphous silicon thin film using a metal film is provided. The wires forming method includes the steps of: removing a MILC metal film; forming etch-stopper layer patterns on at least part of respective source and drain regions formed ... 01/05/06 - 20060003503 - Thin film transistor and method for fabricating the same A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin ... 12/29/05 - 20050287724 - Transparent conductive films and processes for forming them A target containing an indium oxide and a tin oxide is used and sputtered particles from the target are transported by a forced gas flow of a sputter gas onto an organic substrate and deposited on the organic substrate while applying a DC bias voltage or an RF bias voltage ... 12/22/05 - 20050282318 - Method of forming a transistor with a bottom gate A transistor having a bottom gate formed from a layer of gate material and a channel region formed from a layer semiconductor material. In some examples, the layer of gate material is patterned separately from the layer of semiconductor material. In some examples the patterning of the layer of gate ... 12/15/05 - 20050277234 - Flexible carbon-based ohmic contacts for organic transistors The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source). ... 12/08/05 - 20050272187 - Process for ultra-thin body soi devices that incorporate epi silicon tips and article made thereby The invention relates to a transistor that includes an ultra-thin body epitaxial layer that forms an embedded junction with a channel that has a length dictated by an undercut under the gate stack for the transistor. The invention also relates to a process of forming the transistor and to a ... 12/08/05 - 20050272186 - Method for forming a lightly doped drain in a thin film transistor In accordance with the present invention, a gate electrode structure with inclined planes is used as a mask when performing an ion implantation process. The inclined planes are used to define the lightly doped drain (LDD) region in the active area. Therefore, the width of the LDD can be defined ... 12/01/05 - 20050266621 - Gate electrodes of semiconductor devices and methods of manufacturing the same Gate electrodes of semiconductor devices and methods of manufacturing the same are disclosed. An example method comprises: sequentially forming a gate oxide layer and a sacrificial buffer layer on a semiconductor substrate; patterning the sacrificial buffer layer to form an auxiliary pattern; depositing a polysilicon layer; dry etching the polysilicon ... 12/01/05 - 20050266620 - Semiconductor device, electro-optic device, integrated circuit, and electronic apparatus The present invention is directed to a semiconductor device with a thin film transistor on a substrate and a method of forming that semiconductor device and thin film transistor on a substrate. The thin film transistor on the substrate is created by forming a starting point section to be an ... 12/01/05 - 20050266619 - Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a p/n junction A method for making a semiconductor device is described. That method comprises forming on a substrate a first gate dielectric layer that has a first substantially vertical component, then forming a first metal layer on the first gate dielectric layer. After forming on the substrate a second gate dielectric layer ... 11/24/05 - 20050260801 - High performance fet with elevated source/drain region A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETs. The FETs include a thin channel with raised source/drain (RSD) regions at each end on an insulator layer, e.g., on an ultra-thin silicon on insulator (SOI) chip. Isolation trenches at each ... 11/10/05 - 20050250263 - Apparatus and methods for integrated circuit with devices with body contact and devices with electrostatic discharge protection An integrated circuit (IC) includes one or more silicon-on-insulator (SOI) transistors. Each SOI transistor includes a first source region, a second source region, a drain region, a body contact region, a gate, and first and second isolation regions. The body contact region couples electrically to a body of the SOI ... 11/10/05 - 20050250262 - Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure The present invention provides a thin film transistor structure in which at least a trench is formed in an insulating polymer film formed on a substrate. In the thin film transistor structure, a trench formed in the insulating polymer film accommodates a gate wiring constituted of a plurality of conductive ... 11/03/05 - 20050245010 - Stripper solution and method for manufacturing liquid crystal display using the same A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon ... 11/03/05 - 20050245009 - Backgated finfet having diferent oxide thicknesses A method of producing a backgated FinFET having different dielectric layer thickness on the front and back gate sides includes steps of introducing impurities into at least one side of a fin of a FinFET to enable formation of dielectric layers with different thicknesses. The impurity, which may be introduced ... 11/03/05 - 20050245008 - Method for forming narrow gate structures on sidewalls of a lithographically defined sacrificial material A method for forming a gate structure for a semiconductor device includes defining a conductive sacrificial structure on a substrate, forming a reacted metal film on sidewalls of the conductive sacrificial structure, and removing unreacted portions of the conductive sacrificial structure. ... 10/13/05 - 20050227421 - Method of manufacturing a semiconductor on a silicon on insulator (soi) substrate using solid epitaxial regrowth (sper) and semiconductor device made thereby A method of producing a semiconductor device on a silicon on insulator (SOI) substrate is disclosed. In one aspect, the method comprises providing a device with a monocrystalline semiconductor layer on an insulating layer; providing a mask on the semiconductor layer to provide first shielded portions and first unshielded portions, ... 10/06/05 - 20050221545 - Method for manufacturing semiconductor device When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain is locally generated in the semiconductor film. Accordingly, a variation is caused among portions with strain and portions without strain, and ... 09/29/05 - 20050214988 - Method and structure for buried circuits and devices A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component ... 09/29/05 - 20050214987 - Replacement gate process for making a semiconductor device that includes a metal gate electrode A method for making a semiconductor device is described. That method comprises forming a polysilicon layer on a dielectric layer, which is formed on a substrate. The polysilicon layer is etched to generate a patterned polysilicon layer with an upper surface that is wider than its lower surface. The method ... 09/22/05 - 20050208712 - Method of forming a partially depleted silicon on insulator (pdsoi) transistor with a pad lock body extension A MOSFET device structure formed on a silicon on insulator layer, and a process sequence employed to fabricate said MOSFET device structure, has been developed. The process features insulator filled, shallow trench isolation (STI) regions formed in specific locations of the MOSFET device structure for purposes of reducing the risk ... 09/22/05 - 20050208711 - Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same A method for fabricating a thin film array substrate for a liquid crystal display includes steps of forming a gate line assembly and a common electrode line assembly on a first substrate. The gate line assembly includes a plurality of gate lines and gate pads, and the common electrode line ... 09/15/05 - 20050202605 - Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device. A plurality of device separation regions are formed in an SOI layer of an SOI substrate, a desired impurity is implanted into a body portion of an Si active layer region, and therereafter a gate electrode is formed with a gate ... 09/15/05 - 20050202604 - Integrated semiconductor device and method to make same A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abuts the gate region ... 09/08/05 - 20050196912 - Planar pedestal multi gate device A method of forming a transistor comprises disposing a planar platform (or pedestal, or layer) of silicon atop a support structure of oxide which is atop a substrate; forming gate structures both atop and beneath the planar platform; and forming source and drain diffusions within the planar platform. The gate ... 09/01/05 - 20050191796 - Method for manufacturing thin film transistor Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the ... 08/25/05 - 20050186718 - Method for fabricating liquid crystal display panel A method for fabricating a liquid crystal display panel is provided. A thin film transistor array substrate and a color filter array substrate are formed. The thin film transistor array substrate includes a screen region having gate lines, data lines, thin film transistors, and pixel electrodes; a pad region having ... 08/11/05 - 20050176184 - Semiconductor device fabrication method The present invention adequately activates a substrate contact region of a support substrate without substantially changing the conventional SOI-CMOS device formation process. An exposed face of the support substrate is formed in an element isolation region of a layered substrate, which includes a support substrate having a first semiconductor layer, ... 07/21/05 - 20050158926 - Methods of forming thin-film transistor display devices Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the semiconductor layer. The data line ... 07/21/05 - 20050158925 - Thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a first insulating layer and a semiconductor layer in sequence on the gate line; depositing a conductive layer on the semiconductor layer; photo-etching the conductive layer and the ... 07/21/05 - 20050158924 - Polycrystalline silicon layer with nano-grain structure and method of manufacture A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; ... 06/30/05 - 20050142702 - Semiconductor device and manufacturing method thereof A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element ... 06/30/05 - 20050142701 - Display device and method for manufacturing the same The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam ... 06/23/05 - 20050136575 - Method for forming gate of semiconductor device Disclosed is a method for forming a gate of a semiconductor device. The method includes the steps of forming a first oxide layer on a substrate divided into a cell area and a peripheral circuit area, forming a photoresist film pattern on a cell area, thereby exposing a surface of ... 06/23/05 - 20050136574 - Thin film transistor and process for making an array panel A method for making a thin film transistor, TFT, (306) on a substrate includes a photolithographic process step of patterning three layers of materials to form a TFT (306) and to form a bridging structure (308) crossing over a TFT gate bus-line conductor (202) at a cross over region; followed ... 06/16/05 - 20050130354 - Metal oxide semiconductor (mos) transistor including a planarized material layer and method of fabricating the same A method of fabricating a MOS transistor, and the MOS transistor fabricated by the method, includes providing a substrate, forming a predetermined layer having a non-planar surface on the substrate, the predetermined layer including at least one active region, forming a gate electrode material layer on the non-planar, predetermined layer, ... 06/16/05 - 20050130353 - Method of fabricating liquid crystal display panel A method of fabricating a liquid crystal display panel includes forming a first conductive layer on a substrate and patterning the first conductive layer using a first resist pattern printed on the first conductive layer to form a gate pattern. A semiconductor layer and a second conductive layer are stacked ... ### FreshPatents.com Support |