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Semiconductor Device Manufacturing: Process > Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions > On Insulating Substrate Or Layer (e.g., Tft, Etc.) On Insulating Substrate Or Layer (e.g., Tft, Etc.)On Insulating Substrate Or Layer (e.g., Tft, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087489 - Organic thin film transistor, method of manufacturing the same, and flat panel display comprising the same The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic ... 04/19/07 - 20070087488 - Semiconductor device and manufacturing method thereof It is an object of the present invention to control the plane orientation of crystal grains obtained by using a laser beam, into a direction that can be substantially regarded as one direction in an irradiation region of the laser beam. After forming a cap film over a semiconductor film, ... 04/19/07 - 20070087487 - Semiconductor device and manufacturing method thereof An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, ... 04/19/07 - 20070087486 - Thin-film transistor, tft-array substrate, liquid-crystal display device and method of fabricating the same A thin-film transistor includes a gate layer, a gate insulting layer, a semiconductor layer, a drain layer, a passivation layer (each of which being formed on or over an insulating substrate), and a conductive layer formed on the passivation layer. The conductive layer is connected to the gate layer or ... 04/19/07 - 20070087485 - Methods for fabricating polysilicon film and thin film transistors A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the ... 04/12/07 - 20070082435 - Flat panel display and fabrication method thereof A flat panel display and fabrication method thereof. The present invention uses four etching processes to define a second conducting layer, a doped semiconductor layer and a semiconductor layer. The first etching process is a wet etching using a first resist layer to etch the second conducting layer. The second ... 04/12/07 - 20070082434 - Manufacturing of thin film transistor array panel The present invention relates to a manufacturing method of a thin film transistor array panel. the method includes forming a gate line including a gate electrode on a substrate, forming a first insulating layer on the gate line, forming a semiconductor layer on the first insulating layer, forming an ohmic ... 04/12/07 - 20070082433 - Thin film transistor A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is patterned such that the semiconductor layer does not include a seed or a grain boundary created when forming the semiconductor layer on ... 04/12/07 - 20070082432 - Variable exposure photolithography A method of forming a thin film transistor on a substrate including an insulating layer and layers of etchable material over the insulating layer by depositing a layer of photoresist made of polymers that are altered by actinic energy. In the method, an amine cross-linking agent is used with portions ... 04/05/07 - 20070077693 - Method of fabricating fin field effect transistor using isotropic etching technique Methods of fabricating a fin field effect transistor (FinFET) are disclosed. Embodiments of the invention provide methods of fabricating FinFETs by optimizing a method for forming the fin so that a short channel effect is prevented and high integration is achieved. Accordingly, the fin which has a difficulty in its ... 04/05/07 - 20070077692 - Liquid crystal display device and fabricating method thereof A method for fabricating an LCD device includes forming sequentially a first conductive layer, a first insulation layer, a semiconductor layer, and an ohmic contact layer on a first substrate; forming a gate line by patterning the first conductive layer, the first insulation layer, the semiconductor layer, and the ohmic ... 04/05/07 - 20070077691 - Manufacturing method of semiconductor device It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the ... 04/05/07 - 20070077690 - Semiconductor device with transistors and fabricating method therefor A semiconductor device with transistors and a fabricating method therefore are provided. The electrodes of the transistors are formed on the same layer, and they are coupled to one another by a conductor layer. Therefore, the requirement for the vias in whole circuit is reduced, and the cost is decreased. ... 03/29/07 - 20070072350 - Method of manufacturing semiconductor device In a step of doping a silicon-based semiconductor film as a TFT active layer such as channel doping or the like, a protective film is formed by a CVD method as a pretreatment so as to prevent the silicon-based semiconductor film from being contaminated and etched. However, in the case ... 03/29/07 - 20070072349 - Manufacturing method of a display device The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step ... 03/29/07 - 20070072348 - Method of manufacturing an amoled The present invention relating to a method of manufacturing an AMOLED panel. The method comprises providing a substrate, forming a TFT on the substrate, forming an inter-layer insulator layer, forming a plurality of via holes, forming a metal layer which electrically contacts a source and a drain, forming a transparent ... 03/22/07 - 20070065996 - Method for manufacturing a semiconductor device It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when selectively removing an interlayer insulating film with at least two layers constituting a semiconductor device, and forming an opening. One ... 03/22/07 - 20070065995 - Semiconductor device and method of manufacturing the same There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a ... 03/22/07 - 20070065994 - Passivation structure for ferroelectric thin-film devices Ferroelectric thin film devices including a passivation structure to reduce or control a leakage path between two electrodes and along an interface between a ferroelectric thin film layer and a passivation layer are described. Methods for fabricating such devices are also disclosed. The passivation structure includes a first passivation layer ... 03/22/07 - 20070065993 - Fabricating method for flexible thin film transistor array substrate A method of fabricating a flexible thin film transistor array substrate is provided. First, a rigid substrate is provided, and a polymer material layer is coated on the rigid substrate. Then, an insulating layer is coated over the polymer material layer by a spin coating process. The insulating layer covers ... 03/22/07 - 20070065992 - Higher selectivity, method for passivating short circuit current paths in semiconductor devices Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include: 1) reducing the voltage bias on the cell while increasing the time of application ... 03/22/07 - 20070065991 - Thin film transistor array panel and method of manufacturing the same The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention ... 03/08/07 - 20070054443 - Method for manufacturing semiconductor device A semiconductor device having high electrical characteristics is manufactured at low cost and with high throughput. A semiconductor film is crystallized or activated by being irradiated with a laser beam emitted from one fiber laser. Alternatively, laser beams are emitted from a plurality of fiber lasers and coupled by a ... 03/08/07 - 20070054442 - Method for manufacturing thin film transistor, thin film transistor and pixel structure A method for manufacturing a thin film transistor is provided. First, a poly-silicon island is formed on a substrate. Then, a patterned gate dielectric layer and a gate are formed on the poly-silicon island. Next, a source/drain is formed in the poly-silicon island beside the gate, wherein the region between ... 03/08/07 - 20070054441 - Thin film transistor and manufacturing process thereof A thin film transistor including a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer is provided. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain ... 03/01/07 - 20070048910 - Method for manufacturing thin film transistor array panel for display device A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to ... 02/22/07 - 20070042536 - Thin film transistor and method for manufacturing the same A method for manufacturing a thin film transistor of the invention comprises steps of: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a polysilicon layer on the gate insulating layer; forming an etching-stop layer on the polysilicon layer and corresponding to ... 02/15/07 - 20070037325 - After deposition method of thinning film to reduce pinhole defects A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized ... 02/15/07 - 20070037324 - Process for producing an mos transistor and corresponding integrated circuit A silicon substrate (SOI) is placed on a buried oxide layer (BOX). An MOS transistor is produced in an active zone of the substrate which is defined by an isolating region. A gate region and source and drain regions, which between them define a channel, are produced so that the ... 02/15/07 - 20070037323 - Manufacturing strained silicon substrates using a backing material A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(l) and is defined normal to the surface region. A backing plate is coupled to the deformable surface region to ... 02/08/07 - 20070032000 - Vertical pixel structures for emi-flective display and methods for making the same A vertical pixel structure for emi-flective display and a method thereof are provided. The vertical pixel structure has a substrate, a emitting pixel unit arranged on the substrate and a reflective pixel unit arranged on the emitting pixel unit. By using the vertical pixel structure the aperture of the display ... 02/01/07 - 20070026583 - Electrooptical device and a method of manufacturing the same To provide a semiconductor device of high reliability by arranging TFTs that have appropriate structures in accordance with circuit functions. In a semiconductor device having a driver circuit portion and a pixel portion on the same insulator, gate insulating films of a driver TFT are designed to be thinner than ... 02/01/07 - 20070026582 - Method for manufacturing a semiconductor substrate and method for manufacturing a semiconductor device A method for manufacturing a semiconductor substrate includes forming a first semiconductor layer on a predetermined region of a semiconductor base, forming a second semiconductor layer whose etching selective ratio is smaller than that of the first semiconductor layer on the first semiconductor layer, forming a support member to support ... 02/01/07 - 20070026581 - Method of manufacturing thin-film electronic device A method of manufacturing a thin-film electronic device comprising providing a dielectric layer on a base, providing a first electrically conductive layer having a first opening and covering at least part of the dielectric layer; and forming a first through-hole extending through the base and communicating with the first opening. ... 02/01/07 - 20070026580 - Method for manufacturing semiconductor device A semiconductor device is manufactured by forming a gate electrode layer over a substrate having a light transmitting property; forming a gate insulating layer over the gate electrode layer; forming a photocatalyst material over the gate insulating layer; immersing the photocatalyst material in a solution containing a plating catalyst material ... 02/01/07 - 20070026579 - Doped single crystal silicon silicided efuse An eFuse begins with a single crystal silicon-on-insulator (SOI) structure that has a single crystal silicon layer on a first insulator layer. The single crystal silicon layer is patterned into a strip. Before or after the patterning, the single crystal silicon layer is doped with one or more impurities. At ... 01/25/07 - 20070020823 - Method for manufacturing thin film device and semiconductor device The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), ... 01/25/07 - 20070020822 - Method for manufacturing bottom substrate of liquid crystal display device A method for manufacturing liquid crystal display substrates comprises the steps of: (a) providing a substrate having a transparent electrode layer and a metal layer; (b) forming a patterned photoresist layer through half-tone or diffraction; (c) defining signal line area and thin film diode area, or pixel area and conductive ... 01/25/07 - 20070020821 - Method for forming a thin-film transistor A method for forming a thin-film transistor includes forming a source electrode and a drain electrode on an element-side substrate, forming a semiconductor layer in contact with the source electrode and the drain electrode, forming a gate insulating layer overlaid on the semiconductor layer, and forming a gate electrode overlaid ... 01/18/07 - 20070015322 - Method of forming doped regions in the bulk substrate of an soi substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same In one illustrative embodiment, the method comprises providing an SOI substrate comprised of an active layer, a buried insulation layer and a bulk substrate, forming a doped region in the bulk substrate under the active layer, forming a plurality of transistors above the SOI substrate in an area above the ... 01/18/07 - 20070015321 - Manufacturing method for semiconductor device With respect to the selective ratio in the etching process, it is an object to give design freedom in size of an LDD overlapped with a gate electrode, which is formed in a self-aligning manner, by performing an etching process under an etching condition that has a high selective ratio ... 01/18/07 - 20070015320 - Method of making a polycrystalline thin film, a mask pattern used in the same and a method of making a flat panel display device using the same A method of forming a polycrystalline thin film for a thin film transistor, a mask used in the method, and a method of making a flat panel display device using the method of forming a polycrystalline thin film for a thin film transistor are disclosed. Certain embodiments are capable of ... 01/18/07 - 20070015319 - Method for forming contact hole and method for fabricating thin film transistor plate using the same A method for forming a contact hole includes forming a conductive layer on a substrate, patterning the conductive layer to form a wiring, forming an insulating layer on the wiring and the substrate through a low temperature process, and dry etching the insulating layer using an anoxic gas to expose ... 01/18/07 - 20070015318 - Method of manufacturing a thin film transistor A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an active layer of a TFT. When a semiconductor layer is crystallized by a CW laser, one part is formed ... 01/04/07 - 20070004103 - Thin film transistor array panel and manufacturing method thereof A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second ... 01/04/07 - 20070004102 - Method for manufacturing semiconductor device An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the ... 01/04/07 - 20070004101 - Manufacturing method of array substrate using lift-off method A method of forming a pattern includes forming a photoresist pattern on a substrate, forming a first material layer on substantially an entire surface of the substrate including the photoresist pattern, heat-treating the substrate including the first material layer and the photoresist pattern, and forming the pattern by removing the ... 01/04/07 - 20070004100 - Semiconductor device and method for manufacturing the same An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and ... 12/28/06 - 20060292760 - Method of fabricating a thin film transistor for an array panel A method for making a thin film transistor, TFT, (306) on a substrate includes a photolithographic process step of patterning three layers of materials to form a TFT (306) and to form a bridging structure (308) crossing over a TFT gate bus-line conductor (202) at a cross over region; followed ... 12/28/06 - 20060292759 - Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a plurality areas defined laterally in the substrate through a bottom surface ... 12/28/06 - 20060292758 - Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same are provided. Pyrimidopyrimidine derivative structures, along with example syntheses, are provided. The pyrimidopyrimidine derivatives may be pyrimidopyrimidine oligothiophene derivatives in which an oligothiophene having p-type semiconductor characteristics may be bonded to a pyrimidopyrimidine having n-type ... 12/28/06 - 20060292757 - Thin-film transistor (tft) for driving organic light-emitting diode (oled) and method for manufacturing the same A thin-film transistor (TFT) and a method for manufacturing the thin-film transistor using a color filter as a dielectric layer so as to drive an organic light-emitting diode. The thin-film transistor comprises: a substrate; a first poly-silicon mesa formed on the substrate; an insulating layer formed on the substrate and ... 12/28/06 - 20060292756 - Flip chip die assembly using thin flexible substrates Apparatus and methods for flattening thin substrate surfaces by stretching thin flexible substrates to which ICs can be bonded. Various embodiments beneficially maintain the substrate flatness during the assembly process through singulation. According to one embodiment, the use of a window frame type component carrier allows processing of thin laminates ... 12/21/06 - 20060286724 - Substrate backgate for trigate fet Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back ... 12/14/06 - 20060281233 - Method for manufacturing simox wafer and simox wafer This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of ... 12/14/06 - 20060281232 - Method of growing a germanium epitaxial film on insulator for use in fabrication of a cmos integrated circuit A method of fabricating a silicon-germanium CMOS includes preparing a silicon substrate wafer; depositing an insulating layer on the silicon substrate wafer; patterning and etching the insulating layer; depositing a layer of polycrystalline germanium on the insulating layer and on at least a portion of the silicon substrate wafer; patterning ... 12/07/06 - 20060275960 - Integrated circuit device and method for manufacturing integrated circuit device An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including ... 12/07/06 - 20060275959 - Method for fabricating thin film transistor (tft) display A method for fabricating a thin film transistor (TFT) display is provided, wherein the processes of a liquid crystal substrate and an organic thin film transistor (OTFT) substrate are separated. The fabrication of liquid crystal substrate employs the technology of polymer encapsulated liquid crystal molecule, and leaves the polymeric layer ... 12/07/06 - 20060275958 - Fabricating nanoscale and atomic scale devices This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition ... 11/30/06 - 20060270123 - Semiconductor device and method of manufacturing the same To realize the reduction of a manufacturing cost and the enhancement of yield by reducing the number of steps of a TFT in an electro-optical device typified by an active matrix liquid crystal display device. A semiconductor device of the present invention is characterized by including a first wiring and ... 11/30/06 - 20060270122 - Organic tft, method of manufacturing the same and flat panel display device having the same An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and ... 11/30/06 - 20060270121 - Manufacturing method of semiconductor device Even if the insulated isolation structure which makes element isolation using partial and full isolation combined use technology is manufactured, the manufacturing method of a semiconductor device which can manufacture the semiconductor device with which characteristics good as a semiconductor element formed in the SOI layer where insulated isolation was ... 11/23/06 - 20060263952 - Method of manufacturing a semiconductor device The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming. An ... 11/23/06 - 20060263951 - Thin film transistor and method of fabricating the same A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The method includes: forming a first capping ... 11/23/06 - 20060263950 - Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device having a stacked structure, an amorphous silicon layer may be formed on a first single crystalline silicon layer. An amorphous state of the amorphous silicon layer may be converted into a single crystalline state to form a preliminary second single crystalline silicon ... 11/23/06 - 20060263949 - Thin film transistor and manufacturing method thereof A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is ... 11/16/06 - 20060258064 - Method of forming poly-silicon thin film transistors A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization ... 11/16/06 - 20060258063 - Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers One aspect of this disclosure relates to a method for creating proximity gettering sites in a silicon on insulator (SOI) wafer. In various embodiments of this method, a relaxed silicon germanium region is formed over an insulator region of the SOI to be proximate to a device region. The relaxed ... 11/16/06 - 20060258062 - Plasma cvd method In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is Gradually increased from 50 W to 250 W (an output ... 11/16/06 - 20060258061 - Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel A thin film transistor array panel is provided, which includes: a semiconductor layer; a first insulating layer on the semiconductor layer; a gate line including a first amorphous silicon layer and a metal; a second insulating layer covering the gate line; and a data line formed on the second insulating ... 11/09/06 - 20060252186 - Method of manufacturing semiconductor device having conductive thin films In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is ... 11/02/06 - 20060246637 - Sidewall gate thin-film transistor A sidewall gate thin-film transistor (TFT) and associated fabrication method are provided. The method provides a substrate with a surface and forms a surface-normal feature. The surface-normal feature is normal with respect to the substrate surface, with a sidewall made from an electrical insulator. An active silicon (Si) layer is ... 11/02/06 - 20060246636 - Semiconductor device and method of manufacturing the same To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate ... 11/02/06 - 20060246635 - Semiconductor device, method for manufacturing the same, circuit substrate, electro-optical apparatus, and electronic equipment A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a ... 11/02/06 - 20060246634 - Semiconductor device and method of fabricating thereof To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped difference in at least one layer ... 11/02/06 - 20060246633 - Manufacturing method of thin film transistor, display device using thin film transistor, and electronic device incorporating display device In forming a thin film transistor, to form a film superior in quality to a film formed by a conventional CVD method and to form a film equal or superior in quality to a film formed by a thermal oxidation method at a temperature which does not affect a substrate. ... 11/02/06 - 20060246632 - Thin film transistor, thin film transistor subsrate, electronic apparatus and process for producing polycrystalline semiconductor thin film A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the small heat capacity ... 10/26/06 - 20060240608 - Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser ... 10/26/06 - 20060240607 - Sectional field effect devices and method of fabrication A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and ... 10/26/06 - 20060240606 - Method of manufacturing a liquid crystal display device Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and ... 10/26/06 - 20060240605 - Organic thin film transistor and method of fabricating the same An organic thin film transistor (TFT) and a method of fabricating the same are provided. In the method, an organic semiconductor layer is formed by mixing carbon nanotubes with an organic semiconductor material or coating the organic semiconductor material on a carbon nanotube layer. The resulting organic semiconductor layer has ... 10/26/06 - 20060240604 - Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray. ... 10/26/06 - 20060240603 - Active matrix circuit substrate, method of manufacturing the same, and active matrix display including the active matrix circuit substrate An active matrix circuit substrate including data lines, select lines, and pixel circuits electrically coupled with a data line and two adjacent select lines. The pixel circuits include a thin film transistor having a gate electrode coupled with one of the two adjacent select lines and a storage capacitor having ... 10/26/06 - 20060240602 - Transistor for active matrix display and a method for producing said transistor A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated ... 10/19/06 - 20060234430 - Tft fabrication process A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of ... 10/19/06 - 20060234429 - Method for fabricating thin film transistor of liquid crystal display device A method for fabricating a thin film transistor for an LCD device is presented that uses six mask processes. Portions of a semiconductor layer formed on a substrate are doped with first and second impurities in different regions. A conductive layer is deposited and the conductive and semiconductor layers patterned ... 10/19/06 - 20060234428 - Methods of implementing and enhanced silicon-on-insulator (soi) box structures Enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures and methods are provided for implementing enhanced SOI BOX structures. An oxygen implant step is performed from a backside into a thinned silicon substrate layer. An anneal step forms thick buried oxide (BOX) regions from oxygen implants in the silicon substrate layer. The ... 10/12/06 - 20060228838 - Display device and manufacturing method thereof Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation ... 10/12/06 - 20060228837 - Apparatus and method for laser radiation There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of ... 10/12/06 - 20060228836 - Method and structure for forming strained devices A method for manufacturing a device includes mapping extreme vertical boundary conditions of a mask layer based on vertical edges of a deposited first layer and a second layer. The mask layer is deposited over portions of the second layer based on the mapping step. The exposed area of the ... 10/12/06 - 20060228835 - Method of doping a gate electrode of a field effect transistor A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface ; forming an island on the top surface of the substrate, a top surface of the island parallel to the ... 10/05/06 - 20060223243 - Carbon nanotube - metal contact with low contact resistance A metal to Carbon nanotube contact region is described that comprises a chemical bond between the metal and the Carbon nanotube. ... 09/28/06 - 20060216877 - Image display and manufacturing method of the same An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer ... 09/28/06 - 20060216876 - Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is ... 09/28/06 - 20060216875 - Method for annealing and method for manufacturing a semiconductor device A method for annealing a semiconductor substrate by light irradiation, includes depositing a translucent film with a predetermined thickness on a semiconductor substrate. The translucent film has a refractive index that is smaller than that of the semiconductor substrate. The thickness is defined by a peak wavelength of the light ... 09/28/06 - 20060216874 - Method for forming low temperature polysilicon thin film transistor with low doped drain structure A method for forming a low temperature polysilicon thin film transistor with a low doped drain structure comprises: a) forming a polysilicon island on a substrate; b) forming a dielectric layer, a metal layer and a cap layer in sequence cover to the polysilicon island; c) forming a photo-resist patterened ... 09/28/06 - 20060216873 - Image display device and the manufacturing method therefor A resist pattern 18 to form a terminal 40A of data line is limited to the bus line of the terminal 40A. Width of the resist pattern 18 is set to a value approximately equal to a value of the width of the bus line of the terminal 40A so ... 09/28/06 - 20060216872 - Method of manufacturing a semiconductor device having an organic thin film transistor Since positional displacement occurs in a case of using a printing method, an electrode substrate in which a lower electrode and an upper electrode are accurately positioned by way of an insulator could not be formed. Use of a photomask for positional alignment increases the cost outstandingly. According to the ... 09/21/06 - 20060211184 - Ultra-thin si channel mosfet using a self-aligned oxygen implant and damascene technique The present invention provides a thin channel MOSFET having low external resistance. In broad terms, a silicon-on-insulator structure comprising a SOI layer located atop a buried insulating layer, said SOI layer having a channel region which is thinned by the presence of an underlying localized oxide region that is located ... 09/21/06 - 20060211183 - Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor ... 09/21/06 - 20060211182 - Laser annealing method and laser annealing device A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the ... 09/21/06 - 20060211181 - Method of manufacturing polysilicon thin film transistor plate and liquid crystal display including polysilicon thin film transistor plate manufactured by the method Provided are a method of manufacturing a polysilicon thin film transistor plate, which includes leveling the surface of crystallized polysilicon having protruding grains at grain boundaries to improve the electrical characteristics of an active layer, and a liquid crystal display including a polysilicon thin film transistor plate manufactured by the ... 09/21/06 - 20060211180 - Field effect transistor and method of manufacturing the same Provided is a field effect transistor having an organic semiconductor layer, in which crystal grains having a maximum diameter of 10 μm or more account for 25% or more of the surface area of the organic semiconductor layer. The organic semiconductor layer preferably contains 7 to 200 crystal grains having ... 09/14/06 - 20060205125 - Tft substrate and display device having the same A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer ... 09/14/06 - 20060205124 - Bottom-gate sonos-type cell having a silicide gate A bottom-gate thin film transistor having a silicide gate is described. This transistor is advantageously formed as SONOS-type nonvolatile memory cell, and methods are described to efficiently and robustly form a monolithic three dimensional memory array of such cells. The fabrication methods described avoid photolithography over topography and difficult stack ... 09/14/06 - 20060205123 - Methods for metal plating of gate conductors and semiconductors formed thereby A method of metal plating a gate conductor on a semiconductor is provided. The method includes defining an organic polymer plating mandrel on the semiconductor, activating one or more sites of the organic polymer plating mandrel, and binding a seed layer to the one or more of the activated sites. ... 09/07/06 - 20060199315 - Resistor integration structure and technique for noise elimination A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW ... 09/07/06 - 20060199314 - Thin film transistor, and method of fabricating thin film transistor and pixel structure A thin film transistor and method of fabrication a thin film transistor and a pixel structure are provided. First, a gate is formed on the substrate. Then, a gate-isolating layer is formed on the substrate to cover the gate electrode. After that, a source/drain is formed on the gate-isolating layer ... 09/07/06 - 20060199313 - Thin film semiconductor device and method of manufacturing a thin film semiconductor device A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate 10 of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are printed using an offset lithography printing process. ... 08/31/06 - 20060194374 - Method of fabricating thin film transistor substrate for display device A method of fabricating a thin film transistor substrate for a display device is provided. The method includes the steps of forming a gate line and a gate electrode connected to the gate line; forming a gate insulating film disposed covering the gate line and the gate electrode; forming a ... 08/24/06 - 20060189047 - Television, electronic apparatus, and method of fabricating semiconductor device [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the ... 08/24/06 - 20060189046 - Thin film forming method and forming device therefor A method of forming a thin film of the present invention comprises: an optical characteristic adjusting step of repeatedly conveying a substrate holder between a zone to perform an intermediate thin film forming step and a zone to perform a film composition converting step while controlling a conveying speed of ... 08/17/06 - 20060183274 - Transparent oxide semiconductor thin film transistors This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them. ... 08/17/06 - 20060183273 - Thin film transistor and method of fabricating the same A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming ... 08/10/06 - 20060177972 - Thin-film transistor and method for manufacturing the same A thin-film transistor (100) of the present invention comprises a semiconductor layer (4), and a source region (5), a drain region (6), and a gate region (2) which formed on the semiconductor layer to be separated from each other. Said semiconductor layer is made of composite material, and said composite ... 08/03/06 - 20060172472 - Thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; ... 08/03/06 - 20060172471 - Semiconductor device An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film ... 08/03/06 - 20060172470 - Method of manufacturing thin film element A method of manufacturing a thin film element is proposed, which can prevent the decrease in TFT manufacturing yield caused by the cracks occurring in an isolation layer at the time of the removing of an element formation substrate. A protection layer is formed between a plurality of TFTs, and ... 08/03/06 - 20060172469 - Method of fabricating a polycrystalline silicon thin film transistor An amorphous silicon (a-Si) layer is first formed on a substrate, and the a-Si layer is next patterned to form silicon islands for defining device active regions. Then, a single shot laser beam with long pulse is utilized to irradiate each silicon island, and lateral growth crystallization is induced in ... 08/03/06 - 20060172468 - Method of making a planar double-gated transistor A silicon layer interposed between the top silicon nitride layer (SiN) and a silicon germanium layer (SiGe) which in turn is over a thick oxide (BOX) is selectively etched to leave a stack with a width that sets the gate length. A sidewall insulating layer is formed on the SiGe ... 08/03/06 - 20060172467 - Strained silicon devices transfer to glass for display applications A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe layer; fabricating an IC device on the strained silicon ... 07/27/06 - 20060166414 - Selective deposition A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting ... 07/27/06 - 20060166413 - Thin film transistor device and method of manufacturing the same A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist ... 07/27/06 - 20060166412 - Method for manufacturing semiconductor elemental device The present invention provides a method for manufacturing a semiconductor elemental device comprising an SOI structure in which an SOI layer is laminated, comprising the steps of setting transistor forming regions and a device isolation region to the SOI layer, forming a pad oxide film over the SOI layer and ... 07/27/06 - 20060166411 - Semiconductor device and manufacturing method thereof An object of the invention is to provide a semiconductor device and a display device which can be manufactured with improved material efficiency through a simplified manufacturing process, and a manufacturing method thereof. Another object is to provide a technique capable of forming a pattern such as a wiring included ... 07/27/06 - 20060166410 - Manufacturing method of semiconductor device Before applying a resist on a first gate insulating film, a thinner is provided on an entire surface including a surface of the first gate insulating film to wash the surface of the first gate insulating film. Specifically, while a semiconductor substrate is being rotated, onto a central part thereof ... 07/27/06 - 20060166409 - Method of preparation of a precursor oligocene The synthesis of a precursor oligocene, particularly pentacene, is a two-step process. In the fist step the Diels-Alder adduct of the a,b-dihydro-a,b-etheno-oligocene with a 1,1-dialkoxy-cyclopentadiene is formed. In the second step this Diels-Alder adduct is converted into the precursor oligocene, in that first the corresponding keto-compound is formed, which may ... 07/20/06 - 20060160282 - Thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, The method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the ... 07/20/06 - 20060160281 - Method of fabricating a thin film transistor A method of fabricating a thin film transistor is disclosed. The method comprises forming an amorphous silicon layer overlying a substrate. A first heat treatment is then performed to reduce the hydrogen atom concentration of the amorphous silicon layer. Next, the amorphous silicon layer is patterned to form an island-shaped ... 07/20/06 - 20060160280 - Thin film transistor, a method for preparing the same and a flat panel display employing the same Provided are a thin film transistor, a method for preparing the same and a flat panel display employing the same. The thin film transistor includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the ... 07/20/06 - 20060160279 - Optical mask and manufacturing method of thin film transistor array panel using the optical mask A photo mask is provided. The mask includes: a transmitting area and a translucent area, wherein the translucent area includes a plurality of light blocking portions blocking light, and wherein the light blocking portions have a plurality of areas blocking different amounts of light. By using this type of photo ... 07/20/06 - 20060160278 - Thin film device active matrix by pattern reversal process This invention provides a method of fabricating an active matrix of thin film devices through a pattern reversal self aligned imprint lithography (SAIL) process. The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of ... 07/20/06 - 20060160277 - Active layer island A method for forming an electronic device including at least one electrically conductive and one semiconductive material deposited from solution, the method comprising: forming on the substrate a confinement structure consisting of a least a first zone and a second zone, depositing the electrically conductive material on the substrate, wherein ... 07/20/06 - 20060160276 - Electronic devices A method for forming an electronic device having a multilayer structure, comprising: embossing a surface of a substrate so as to depress first and second regions of the substrate relative to at least a third region of the substrate; depositing conductive or semiconductive material from solution onto the first and ... 07/13/06 - 20060154407 - Chuck plate assembly with cooling means The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and ... 07/06/06 - 20060148138 - Field transistor monitoring pattern for shallow trench isolation defects in semiconductor device A field transistor monitoring pattern has two active areas, i.e., a source region and a drain region, spaced apart from each other by an STI area intervening therebetween. The STI area is generally narrower than each active area. The monitoring pattern further has two gate patterns, each having a gate ... 07/06/06 - 20060148137 - Integrated mems packaging An integrated MEMS package and associated packaging method are provided. The method includes: forming an electrical circuit, electrically connected to the first substrate; integrating a MEMS device on a first substrate region, electrically connected to the first substrate; providing a second substrate overlying the first substrate; and, forming a wall ... 06/29/06 - 20060141685 - Liquid crystal display device and fabrication method thereof A method for fabricating a liquid crystal display includes providing a first substrate having a pixel part and a driving circuit part, forming a gate electrode in the pixel part of the first substrate, forming a first insulation film, a first amorphous silicon thin film and a second amorphous silicon ... 06/29/06 - 20060141684 - Polysilicon film, thin film transistor using the same, and method for forming the same A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process ... 06/29/06 - 20060141683 - Production method for thin-film semiconductor A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately ... 06/15/06 - 20060128079 - Method for manufacturing a thin film transistor A method for manufacturing a thin film transistor (TFT) includes the steps of: providing a substrate (1); and forming a TFT circuit on the substrate using laser-induced chemical vapor deposition (LCVD). Detailedly, the method includes providing the bare substrate, cleaning the substrate with cleaning liquid, and successively forming a gate ... 06/15/06 - 20060128078 - Soi substrate manufacturing method This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer (204b) and semiconductor layer (203b) are in turn ... 06/15/06 - 20060128077 - Thin film transistor and method for manufacturing the same A method for manufacturing a thin film transistor includes forming a gate oxide film on a substrate, forming a first nitride layer on the gate oxide film, forming a polysilicon layer on the first nitride layer, forming a second nitride layer on sidewalls of the gate oxide film, first nitride ... 06/15/06 - 20060128076 - Self-aligning patterning method The method comprises firstly forming a patterned mask 20 on the surface of a sacrificial layer 18 which is part of a multi-layer structure 10 which comprises the substrate 12, a conductive layer 14, an insulating layer 16 and the sacrificial layer 18. Unpatterned areas are then etched to remove ... 06/15/06 - 20060128075 - Manufacturing method of silicon on insulator wafer Provided is a method of manufacturing a silicon on insulator (SOI) substrate, which includes the steps of (a) forming a buried oxidation layer to a predetermined depth of a first wafer and forming an oxidation layer on a surface of the first wafer; (b) bonding a second wafer onto the ... 06/15/06 - 20060128074 - Combined fully-depleted silicon-on-insulator (fd-soi) and partially-depleted silicon-on-insulator (pd-soi)devices A method (100) of forming fully-depleted (90) and partially-depleted (92) silicon-on-insulator (SOI) devices on a single die in an integrated circuit device (2) is disclosed using SOI starting material (4, 6, 8) and a selective epitaxial growth process (110). ... 06/08/06 - 20060121651 - Thin film transistor and method of fabricating the same A thin film transistor and method of fabricating the same are provided. The thin film transistor is characterized in that low angle grain boundaries formed in a channel layer in a semiconductor layer pattern is tilted −15 to 15° with respect to a current flowing direction. The method includes: forming ... 06/01/06 - 20060115934 - Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is ... 05/25/06 - 20060110864 - Method of fabricating a thin film transistor using dual or multiple gates A method of fabricating a TFT using dual or multiple gates, and a TFT having superior characteristics and uniformity by providing a method of fabricating a TFT using dual or multiple gates by calculating the probability including Nmax, the maximum number of crystal grain boundaries in active channel regions according ... 05/25/06 - 20060110863 - Semiconductor device, and method for manufacturing the same It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, ... 05/25/06 - 20060110862 - Method of forming a thin film transistor A method of forming a thin film transistor comprising a deposition procedure of a microcrystal material layer and performing a plasma treatment procedure. The deposition procedure and the plasma treatment procedure are repeated. A buffer layer is thus formed on the gate electrode. ... 05/18/06 - 20060105507 - Method to form si-containing soi and underlying substrate with different orientations A method of forming a hybrid SOI substrate comprising an upper Si-containing layer and a lower Si-containing layer, wherein the upper Si-containing layer and the lower Si-containing layer have different crystallographic orientations. In accordance with the present invention, the buried insulating region may be located within one of the Si-containing ... 05/18/06 - 20060105506 - Method of manufacturing a thin film transistor A method of manufacturing a thin film transistor is described. A polysilicon island is formed over a substrate. A gate insulating layer is formed over the substrate to cover the polysilicin island. A gate is formed on the gate insulating layer above the polysilicon island. A passivation layer is formed ... 05/11/06 - 20060099745 - Method for forming integrated advanced semiconductor device using sacrificial stress layer An integrated advanced method for forming a semiconductor device utilizes a sacrificial stress layer as part of a film stack that enables spatially selective silicide formation in the device. The low-resistance portion of the device to be silicided includes NMOS transistors and PMOS transistors. The stressed film may be a ... 05/04/06 - 20060094173 - Method for forming semiconductor device In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, substrate-biasing between an SOI transistor and the silicon substrate is performed via a plug. As a result, the contact hole for the substrate-biasing does not need to pass through an ... 05/04/06 - 20060094172 - Method of fabricating thin film transistor A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In ... 05/04/06 - 20060094171 - Isolation trench thermal annealing method for non-bulk silicon semiconductor substrate A method for fabricating a semiconductor product employs a semiconductor substrate other than a bulk silicon semiconductor substrate. The semiconductor substrate is etched to form an etched semiconductor substrate having an isolation trench adjoining an active region. The etched semiconductor substrate is thermally annealed prior to forming a semiconductor device ... 05/04/06 - 20060094170 - Memory capable of storing information and the method of forming and operating the same The present invention discloses a method for manufacturing memory unit capable of storing multi-bits binary information. Firstly, a gate is formed on a dielectric layer over a semiconductor substrate. Next, a first etching is performed to etch the semiconductor substrate by using the gate acting as an etching mask to ... 05/04/06 - 20060094169 - Semiconductor device structure and method therefor Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and an overlying layer of the other crystal orientation. The underlying layer has a portion exposed on which is epitaxially ... 05/04/06 - 20060094168 - Method of forming a thin film component Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described. ... 04/27/06 - 20060088961 - Method of fabricating poly crystalline silicon tft A method of fabricating a poly crystalline silicon thin film transistor (TFT) is provided. The method includes the operations of forming a poly crystalline silicon having a source, a drain, and a channel region between the source and the drain on a substrate in a predetermined pattern; forming an insulating ... 04/27/06 - 20060088960 - Semiconductor material, field effect transistor and manufacturing method thereof The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a ... 04/20/06 - 20060084206 - Thin-film pattern forming method, semiconductor device, electro-optic device, and electronic apparatus A thin-film pattern forming method that deposits a plurality of thin films on a substrate to form a thin-film pattern, includes: forming a second thin film on the substrate, the second thin film having an affinity for a functional liquid containing a thin-film material that makes up a first thin ... 04/20/06 - 20060084205 - Method of manufacturing thin film device electro-optic device, and electronic instrument A method of manufacturing a thin film device, comprises: forming a pair of multi-layered structures each formed by bonding a transfer layer including a thin film device to a temporary transfer substrate, including; forming the transfer layer on a transfer-source substrate via a first separation layer separated in accordance with ... 04/20/06 - 20060084204 - Method of manufacturing a thin film transistor A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous ... 04/13/06 - 20060079033 - Method for making thin-film semiconductor device A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the ... 04/13/06 - 20060079032 - Method of manufacturing thin film transistor A method of manufacturing a thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming a semiconductor layer on the gate insulating film; forming a bank including a first bank portion and a second bank portion, the first bank ... 04/13/06 - 20060079031 - Semiconductor device and manufacturing method thereof An insulating film layer is formed between a channel region of an MOS element formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a sapphire substrate, and the sapphire substrate, thereby to bring a stress state of the monocrystal silicon ... 03/30/06 - 20060068533 - Thin film circuit device, manufacturing method thereof, electro-optical apparatus, and electronic system To provide a thin film circuit device in which a three-dimensional circuit structure is realized, a thin film circuit device is formed of a first thin film circuit layer and a second thin film circuit layer laminated to each other. The first thin film circuit layer contains a first thin ... 03/30/06 - 20060068532 - Dual-gate thin-film transistor A dual-gate thin film transistor (DG-TFT) and associated fabrication method are provided. The method comprises: forming a first (back) gate in a first horizontal plane; forming source/drain (S/D) regions and an intervening channel region in a second horizontal plane, overlying the first plane; and, forming a second (top) gate in ... 03/30/06 - 20060068531 - Finfet sram cell using inverted finfet thin film transistors An integrated circuit, such as a SRAM cell (130), including an inverted FinFET transistor (P2) and a FinFET transistor (N3). The inverted FinFET transistor includes a first gate region (108) formed by semiconductor structure (100) on a substrate, a first body region comprised of a semiconductor layer (104), having a ... 03/30/06 - 20060068530 - Semiconductor device and method of manufacturing same at least a first, in particular planar, metallization region (40) arranged between the isolating layer (10) and the component (30), in particular between the isolating layer (10) and the slightly doped zone (34) of the component (30), as well as a method of manufacturing at least one semiconductor device (100) ... 03/16/06 - 20060057786 - Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by 103 on the surface of an amorphous silicon film 102. Then a crystalline silicon film 104 is obtained by a heat treatment. At this time, the crystallization is remarkably improved by the action of ... 03/16/06 - 20060057785 - Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device, comprising introducing a work piece comprising a semiconductor substrate, a gate insulation film formed on the semiconductor substrate, and a gate electrode film formed on the gate insulation film, into a chamber, and forming a gate electrode by selectively etching the ... 03/16/06 - 20060057784 - Enhanced resurf hvpmos device with stacked hetero-doping rim and gradual drift region An HV PMOS device formed on a substrate having an HV well of a first polarity type formed in an epitaxial layer of a second polarity type includes a pair of field oxide regions on the substrate and at least partially over the HV well. Insulated gates are formed on ... 03/09/06 - 20060051907 - Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). Then, the crystalline semiconductor thin film (102) is ... 03/09/06 - 20060051906 - Method of fabricating a semiconductor device There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first ... 03/09/06 - 20060051905 - Method of fabricating planarized poly-silicon thin film transistors A buffer layer, a protective layer and a poly-silicon layer are formed on a substrate in turn, and the poly-silicon layer is then patterned to form island active regions. Next, n-type ions are implanted into portions of the poly-silicon layer to form source/drain regions. Then, a dilute buffer oxide etchant ... 03/09/06 - 20060051904 - Method for forming polycrystalline silicon thin film transistor A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the ... 03/02/06 - 20060046360 - Method of fabricating thin film transistor A method of fabricating a thin film transistor is provided. The method comprises first preparing a substrate and forming an amorphous silicon layer on the substrate. A catalyst construction is then positioned on the amorphous silicon layer and an anode and a cathode are then connected to the catalyst construction. ... 03/02/06 - 20060046359 - Method of manufacturing active matrix substrate, active matrix substrate, electro-optical device, and electronic apparatus A method of manufacturing an active matrix substrate includes forming wiring lines each having a matrix pattern on a substrate such that a wiring line extending in any one of a first direction and a second direction is separated from another wiring line at an intersection; forming a laminated portion ... 03/02/06 - 20060046358 - Method of manufacturing an electro-optical device An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices. An EL material is formed by printing in an active matrix EL display device. Relief printing or screen printing may be used as the method of printing. ... 03/02/06 - 20060046357 - Method for fabricating thin film transistor The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst ... 03/02/06 - 20060046356 - Method for forming a circuit package having a thin substrate According to one embodiment, a method of manufacturing a semiconductor device is provided. The method comprises forming a silicon-on-insulator (SOI) wafer. The SOI wafer has a carrier silicon layer, an oxide layer disposed outwardly from the carrier silicon layer, and a silicon layer disposed outwardly from the oxide layer. The ... 03/02/06 - 20060046355 - Methods of forming semiconductor constructions The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspects, a semiconductor construction is passivated by subjecting the construction to an anneal at a temperature ... 02/23/06 - 20060040431 - Supporting member for semiconductor elements, and method for driving supporting member for semiconductor elements A support member for semiconductor device elements includes a conductive layer separated from the semiconductor elements by an insulative layer. A protective potential lower than any operating potential applied to the semiconductor device elements is applied to the conductive layer. The relatively negative potential on the conductive layer forms an ... 02/23/06 - 20060040430 - System and method for integrating low schottky barrier metal source/drain According to one embodiment of the invention, a method for integrating low Schottky barrier metal source/drain includes providing a substrate, forming an epitaxial SiGe layer outwardly from the substrate, forming an epitaxial Si layer outwardly from the SiGe layer, and forming a metal source and a metal drain. ... 02/16/06 - 20060035419 - Low temperature curable materials for optical applications The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating ... 02/16/06 - 20060035418 - Method for fabricating semiconductor device First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, ... 02/16/06 - 20060035417 - Semiconductor device and method for forming the same The present invention is related to semiconductor device and method for manufacturing the same. In accordance with the semiconductor device and method for manufacturing the same, at least one opening extending between LDD regions and exposing a buried insulating layer is formed so that a gate electrode surrounds the surface ... 02/09/06 - 20060030088 - Shadow frame with cross beam for semiconductor equipment A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a ... 02/09/06 - 20060030087 - Compliant substrate for a heteroepitaxial structure and method for making same The present invention relates to a compliant substrate having a top surface for receiving a heteroepitaxial structure or heteroepitaxial layer. This substrate comprises a carrier substrate, a top single-crystalline layer, a buried layer located between the carrier substrate and the top layer, and a weakened region located in the top ... 02/09/06 - 20060030086 - Method of manufacturing thin film transistor Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. ... 02/09/06 - 20060030085 - Method of fabricating thin film transistor Disclosed is a method of fabricating a thin film transistor in which, in order to control the concentration of metal catalysts remaining on a polycrystalline silicon layer when an amorphous silicon layer formed on an insulating substrate is crystallized into the polycrystalline silicon layer by a super grain silicon (SGS) ... 02/09/06 - 20060030084 - Manufacture of electronic devices comprising thin-film circuit elements In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimisation of the respective TFT and diode properties while ... 02/02/06 - 20060024869 - Gate material for semiconductor device fabrication In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal. Subsequently formed shallow sources and drains, therefore, are not affected by the gate annealing step. ... 02/02/06 - 20060024868 - Selective oxidation of silicon in diode, tft, and monolithic three dimensional memory arrays The present invention relates to use of selective oxidation to oxidize silicon in the presence of tungsten and/or tungsten nitride in memory cells and memory arrays. This technique is especially useful in monolithic three dimensional memory arrays. In one aspect of the invention, the silicon of a diode-antifuse memory cell ... 02/02/06 - 20060024867 - Method of applying electrical stress to low-temperature poly-crystalline thin film transistor A low-temperature poly-crystalline thin film transistor in which amorphous silicon is crystallized using a laser crystallization method or a metal induced lateral crystallization method shows an unstable electrical property since crystallization is accomplished at a low temperature. When an electrical stress is applied to the low-temperature poly-crystalline thin film transistor ... 02/02/06 - 20060024866 - Thin film transistor and method for fabricating same A method for forming a thin film transistor on a substrate is disclosed. A gate electrode and a gate insulation layer are disposed on a surface of the substrate. A deposition process is performed by utilizing hydrogen diluted silane to form a silicon-contained thin film on the gate insulation layer ... 01/19/06 - 20060014332 - Soi device having increased reliability and reduced free floating body effects The present invention provides a novel method for increasing the amount of deuterium incorporated into trap sites of a transistor device during a deuterium passivation anneal by electrically pre-stressing the fabricated device prior to a deuterium anneal. The method of the present invention equally applies to SOI and CMOS technology. ... 01/19/06 - 20060014331 - Floating-body dram in tri-gate technology A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A ... 01/19/06 - 20060014330 - Method for manufacturing soi wafer The present invention provides a manufacturing method for an SOI wafer with a high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer ... 01/12/06 - 20060008954 - Methods for integrating replacement metal gate structures Methods and associated structures of forming a microelectronic device are described. Those methods comprise providing a substrate comprising a first transistor structure comprising an n-type gate material and second transistor structure comprising a p-type gate material, selectively removing the n-type gate material to form a recess in the first gate ... 01/12/06 - 20060008953 - Structure of ltps-tft and method of fabricating channel layer thereof A LTPS-TFT structure comprising a cap layer, a polysilicon film and a gate is provided. The cap layer is disposed over the substrate with a gap between the two. The polysilicon film is disposed over the cap layer and is divided into a channel region and a source/drain region on ... 01/12/06 - 20060008952 - Fabrication method of thin film transistor A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming ... 01/05/06 - 20060003502 - Method of fabricating semiconductor device and semiconductor fabricated by the same method A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O ... 01/05/06 - 20060003501 - Method of fabricating semiconductor device and semiconductor fabricated by the same method A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition ... 01/05/06 - 20060003500 - Epitaxial siox barrier/insulation layer A method for producing an insulating or barrier layer (FIG. 1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be ... 12/29/05 - 20050287723 - Semiconductor-on-insulator constructions; and methods of forming semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, ... 12/29/05 - 20050287722 - Method of fabricating semiconductor device Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to ... 12/29/05 - 20050287721 - Method for manufacturing wiring substrate, thin film transistor, display device and television device An object of the present invention is to provide a method for manufacturing a display device by improving the utilization efficiency of materials and simplifying manufacturing process. Another object of the invention is to provide a technique for forming a pattern such as a wiring having a predetermined shape included ... 12/29/05 - 20050287720 - Method of fabricating thin film transistor by reverse process A method of fabricating a thin film transistor is provided. The thin film transistor fabrication method includes the steps of: forming an amorphous silicon film on an insulation substrate; continuously forming a gate oxide film and a gate electrode metal film on the silicon film of the substrate; sequentially patterning ... 12/29/05 - 20050287719 - Organic thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; depositing an organic semiconductor layer on the data line, the ... 12/29/05 - 20050287718 - Integrated soi fingered decoupling capacitor The invention provides a fingered decoupling capacitor in the bulk silicon region that are formed by etching a series of minimum or sub-minimum trenches in the bulk silicon region, oxidizing these trenches, removing the oxide from at least one or more disjoint trenches, filling all the trenches with either in-situ ... 12/22/05 - 20050282317 - Thin film semiconductor apparatus and method for driving the same A thin film semiconductor apparatus comprising thin film transistors integrated on a substrate, and a wiring connecting the thin film transistors to one another, wherein each of the thin film transistors comprises a channel which has a predetermined threshold-voltage and on-off operates depending on a gate voltage applied through a ... 12/22/05 - 20050282316 - Method of manufacturing an electronic device comprising a thin film transistor A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10; 20), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes (24; 26, 28) over the semiconductor layer. A short diffusion ... 12/15/05 - 20050277233 - Semiconductor device and method of manufacturing the same In a method of obtaining a crystalline silicon film having high crystallinity at a low temperature and for a short time by using a catalytic element and using both a heat treatment and irradiation of laser light, a catalytic element which does not require a gettering step is used as ... 12/08/05 - 20050272185 - Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and ... 12/08/05 - 20050272184 - Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of ... 11/24/05 - 20050260800 - Method of manufacturing a semiconductor device The present invention provides a manufacturing method of a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level, and also provide a semiconductor device obtained in accordance with the manufacturing method. The manufacturing method comprises steps of adding a ... 11/24/05 - 20050260799 - Semiconductor device and method for producing the same The present invention provides a method for producing an SOI semiconductor device capable of forming a uniform field oxide film with good controllability. The method for producing a semiconductor device with an SOI substrate having a support substrate 1 and a semiconductor layer 3 that interpose a first insulating film ... 11/10/05 - 20050250261 - One transistor soi non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a substrate, a buried insulator layer formed on the substrate, and a transistor formed on the buried insulator layer. The transistor ... 11/10/05 - 20050250260 - Method of fabricating liquid crystal display device The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the ... 11/10/05 - 20050250259 - Soi-type semiconductor device, and production method for manufacturing such soi-type semiconductor device In a silicon-on-insulator (SOI)-type semiconductor device, a buried silicon dioxide layer is produced in the silicon substrate. An area of the silicon substrate, which is sited above the buried silicon dioxide layer, is defined as an SOI area, and the remaining area is defined as a non-SOI area. A peripheral ... 10/27/05 - 20050239238 - Simultaneous planar and non-planar thin-film transistor processes A method is provided for concurrently forming MP-TFTs and P-TFTs. Generally, the method comprises: forming a P-TFT having source/drain (S/D) regions, an intervening channel region, and a gate, all in a first horizontal plane; and simultaneously forming a MP-TFT having a first gate in the first horizontal plane and at ... 10/20/05 - 20050233507 - Semiconductor display device and method of manufacturing the same A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer ... 10/13/05 - 20050227420 - Mask rom and the method of forming the same and the scheme of reading the device The structure of the nonvolatile memory comprises a substrate having source/drain formed at unselected sides and source/drain with extension source/drain formed at other selected sides. A gate dielectric layer is formed on the substrate and a gate is formed on the gate dielectric layer. An isolation layer is formed along ... 10/13/05 - 20050227419 - Semiconductor device and manufacturing method thereof Manufacture of TFTs corresponding to various circuits makes structures thereof complex, which involves a larger number of manufacturing steps. Such an increase in the number of the manufacturing steps leads to a higher manufacturing cost and a lower manufacturing yield. In the invention, a high concentration of impurities is doped ... 10/13/05 - 20050227418 - Method for creating a self-aligned soi diode by removing a polysilicon gate during processing A method of forming a self-aligned SOI diode, the method comprising depositing a protective structure over a substrate; implanting a plurality of diffusion regions of variable dopant types in an area between at least one pair of isolation regions in the substrate, the plurality of diffusion regions separated by a ... 10/06/05 - 20050221543 - Double gated transistor and method of fabrication Accordingly, the present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention uses provides a double gated transistor with asymmetric gate doping, where one of the double gates is doped degenerately ... 10/06/05 - 20050221542 - Semiconductor device and manufacturing method thereof A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolithography steps, a liquid crystal display ... 09/29/05 - 20050214986 - Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use ... 09/29/05 - 20050214985 - Method to make markers for double gate soi processing A method of making at least one marker (MX) for double gate SOI processing on a SOI wafer is disclosed. The marker has a diffracting structure in a first direction and the diffracting structure is configured to generate an asymmetrical diffraction pattern during use in an alignment and overlay detection ... 09/29/05 - 20050214984 - Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a ... 09/29/05 - 20050214983 - Semiconductor device, method for manufacturing the same, liquid crystal television and el television A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step coverage property is disclosed. According to the present invention, a method for manufacturing a semiconductor device comprises ... 09/29/05 - 20050214982 - Electrical fuse for silicon-on-insulator devices A method and apparatus for providing an electrical fuse is provided. An electrical fuse is patterned from the active layer of a semiconductor-on-insulator (SOI) wafer. One shape of the electrical fuse may be a first and second portion electrically coupled via a third section. The third section is typically thinner ... 09/22/05 - 20050208710 - Method of manufacturing a semiconductor device An object of the present invention is to form a channel formation region, or a TFT formation region, using one crystal aggregate (domain) by controlling crystal location and size, thus suppressing TFT variations. According to the present invention, laser irradiation is performed selectively on an amorphous silicon film in the ... 09/15/05 - 20050202603 - Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an NMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or ... 09/15/05 - 20050202602 - Method of manufacturing a semiconductor device At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above ... 09/15/05 - 20050202601 - Electro-optical device, method of manufacturing the same, and electronic apparatus To control transistor the characteristics and the manufacturing efficiency of TFTs for driving display elements in an active manner and for realizing a display with high definition and high brightness. There is provided a method of manufacturing an electro-optical device comprising a step of forming a semiconductor film on a ... 09/15/05 - 20050202600 - Silicon-on insulator (soi) substrate having dual surface crystallographic orientations and method of forming same A method is provided of forming a silicon-on-insulator (SOI) substrate having at least two exposed surface crystal orientations. The method begins by providing an SOI substrate having a first silicon layer with a surface having a first crystal orientation located on a first buried oxide layer. The buried oxide layer ... 09/08/05 - 20050196911 - Method for fabricating active-matrix display device A method for fabricating a display device having a thin film transistor. When forming wirings and electrode patterns made of a metal layer on a mother substrate, the metal wiring and the electrode patterns are patterned and, simultaneously, the metal layer within a predetermined range of the outermost region of ... 09/08/05 - 20050196910 - Method of manufacturing a semiconductor device and electronic equipment Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an ... 08/25/05 - 20050186717 - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus To provide a manufacturing method of an electro-optical device capable of effectively forming self-emitting elements in a large substrate on which a plurality of small substrates are arranged in a plane, without increasing the size of a manufacturing apparatus, the electro-optical device manufactured by the method, and an electronic apparatus ... 08/25/05 - 20050186716 - Load-lock technique Disclosed is a load-lock system, an exposure apparatus having the same, and a load-lock method. In one preferred form, the load-lock system includes a chamber housing, and a capacity changing system for changing the capacity of the chamber housing. The load-lock method includes the steps of conveying an object into ... 08/18/05 - 20050181548 - Method of manufacturing a display panel A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried ... 08/18/05 - 20050181547 - Method for manufacturing thin film device and semiconductor device The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), ... 08/11/05 - 20050176183 - Method of manufacturing thin film transistor, method of manufacturing display and display A method of manufacturing a thin film transistor in which a microscopic film can be evenly formed regardless of a size of a substrate and that satisfies a low cost of manufacture and provides high performance includes applying a liquid silicon material on a predetermined region of the substrate where ... 08/11/05 - 20050176182 - Forming a plurality of thin-film devices An aspect of the present invention is a method for forming a plurality of thin-film devices. The method includes providing a flexible substrate and utilizing a self-aligned imprint lithography (SAIL) process to form the plurality of thin-film devices on the flexible substrate. ... 08/04/05 - 20050170568 - Isotropic polycrystalline silicon A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a ... 08/04/05 - 20050170567 - Laser irradiation apparatus and method of fabricating a semiconductor device There is provided an optical system for reducing faint interference observed when laser annealing is performed to a semiconductor film. The faint interference conventionally observed can be reduced by irradiating the semiconductor film with a laser beam by the use of an optical system using a mirror of the present ... 08/04/05 - 20050170566 - Thin film structure, capacitor, and methods for forming the same A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be formed on the ... 08/04/05 - 20050170565 - Forming method of contact hole, and manufacturing method of semicondutor device, liquid crystal display device and el display device When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading ... 08/04/05 - 20050170564 - Thin film tansistor array panel and fabricating method thereof A method of forming a thin film transistor array panel is described. The thin film transistor array comprises a substrate, a plurality of scan lines, a plurality of gates a plurality of first bonding pads and a plurality of second bonding pads, wherein the first bonding pads are connected with ... 07/28/05 - 20050164434 - Method of fabricating semiconductor device A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. ... 07/28/05 - 20050164433 - Ultra thin channel mosfet Described is a method for making thin channel silicon-on-insulator structures. The inventive method comprises forming a set of thin spacer abutting a gate region in a first device and a second device region; forming a raised source/drain region on either side of the gate region in the first device region ... 07/28/05 - 20050164432 - Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest ... 07/28/05 - 20050164431 - Integration of pre-s/d anneal selective nitride/oxide composite cap for improving transistor performance The present invention facilitates semiconductor device operation and fabrication by providing a cap-annealing process that improves channel electron mobility without substantially degrading PMOS transistor devices. The process uses an oxide/nitride composite cap to alter the active dopant profile across the channel regions. During an annealing process, dopants migrate out of ... 07/21/05 - 20050158923 - Ultra-thin body transistor with recessed silicide contacts A semiconductor device (100), including a dielectric pedestal (220) located above and integral to a substrate (110) and having first sidewalls (230), a channel region (210) located above the dielectric pedestal (220) and having second sidewalls (240), and source and drain regions (410) opposing the channel region (210) and each ... 07/21/05 - 20050158922 - Method of manufacturing a semiconductor device Contamination of an interface of respective films constituting a TFT due to an contaminant impurity in a clean room atmosphere becomes a great factor to lower the reliability of the TFT. Besides, when an impurity is added to a crystalline semiconductor film, its crystal structure is broken. By using an ... 07/21/05 - 20050158921 - Soi substrate An SOI substrate having a partial SOI structure in which a buried insulating film having a predetermined area is formed via an active layer in a part of a silicon single crystal substrate in plan view by ion-implanting elements to the part of the substrate and then applying thereto a ... 07/21/05 - 20050158920 - Thin film transistor with multiple gates using super grain silicon crystallization A thin film transistor with multiple gates using a SGS process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a thin film transistor using super grain silicon (SGS) crystallization comprising a semiconductor layer formed on an insulating substrate in ... 07/14/05 - 20050153487 - Formation of silicon-germanium-on-insulator (sgoi) by an integral high temperature simox-ge interdiffusion anneal A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implanted-ion rich region in the Si-containing substrate. The implanted-ion rich region has a sufficient ion concentration such that during ... 07/14/05 - 20050153486 - Method of fabricating a strained silicon channel finfet An exemplary embodiment relates to a method of FinFET channel structure formation. The method can include providing a compound semiconductor layer above an insulating layer, providing a trench in the compound semiconductor layer, and providing a strained semiconductor layer above the compound semiconductor layer and within the trench. The method ... 07/07/05 - 20050148122 - Substrate, manufacturing method therefor, and semiconductor device A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate ... 07/07/05 - 20050148121 - Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial ... 06/30/05 - 20050142700 - Strained silicon on a sige on soi substrate A semiconductor device with an undercut relaxed SiGe layer having voids beneath the SiGe layer. The voids may be filled with a dielectric such as SiO2. A strained Si layer may be epitaxially grown on the relaxed SiGe layer to combine the benefits of a defect-free strained Si surface and ... 06/23/05 - 20050136573 - Method of making direct contact on gate by using dielectric stop layer A CMOS RF device and a method to fabricate said device with low gate contact resistance are described. Conventional MOS transistor is first formed with isolation regions, poly-silicon gate structure, sidewall spacers around poly gate, and implanted source/drain with lightly and heavily doped regions. A silicon dioxide layer such as ... 06/23/05 - 20050136572 - Method of fabricating reflection type liquid crystal display A liquid crystal display device includes (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a transistor formed on the first substrate, (e) a wiring layer formed on the first ... 06/02/05 - 20050118751 - Semiconductor device and fabrication method thereof A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen ... ### FreshPatents.com Support - Terms & Conditions |