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Semiconductor Device Manufacturing: Process > Making Conductivity Modulation Device (e.g., Unijunction Transistor, Double Base Diode, Conductivity-modulated Transistor, Etc.) Making Conductivity Modulation Device (e.g., Unijunction Transistor, Double Base Diode, Conductivity-modulated Transistor, Etc.)Making Conductivity Modulation Device (e.g., Unijunction Transistor, Double Base Diode, Conductivity-modulated Transistor, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/04/07 - 20070004098 - Method of producing a semiconductor device with an aluminum or aluminum alloy electrode A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on ... 05/04/06 - 20060094165 - Method for fabricating semiconductor components In a method for fabricating semiconductor components a first carrier is provided and at least one semiconductor component is arranged on the first carrier between ist boundary lines. The semiconductor has at least one semiconductor contact-connection region which is located on a first surface of the first carrier. Then conical ... 02/23/06 - 20060040429 - Fabrication method of thin film transistor The present invention provides a fabrication method of thin film transistor comprising a step of forming an amorphous silicon layer on a substrate, a step of forming a capping layer on the amorphous silicon layer, a step of forming a metal catalyst layer on the capping layer, a step of ... 07/14/05 - 20050153484 - Suspended gate single-electron device The present invention provides a single-electron transistor device (100). The device (100) comprises a source (105) and drain (110) located over a substrate (115) and a quantum island (120) situated between the source and drain (105, 110), to form tunnel junctions (125, 130) between the source and drain (105, 110). ... 07/07/05 - 20050148119 - Method of manufacturing thin film transistor, method of manufacturing flat panel display, thin film transistor, and flat panel display A method of manufacturing a thin film transistor and a method of manufacturing a flat panel display without increasing the number of heat treatment steps, and a thin film transistor and a flat panel display obtained by such methods are disclosed. A semiconductor region having an island shape is formed ... ### FreshPatents.com Support |