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Semiconductor Device Manufacturing: Process > Making Regenerative-type Switching Device (e.g., Scr, Igbt, Thyristor, Etc.) > Having Field Effect Structure > Junction Gate > Vertical Channel Vertical ChannelVertical Channel patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/25/07 - 20070020819 - Vertical transistor structures having vertical-surrounding-gates with self-aligned features The present inventions include a vertical transistor formed by defining a channel length of the vertical-surrounding-gate field effect transistor with self-aligning features. The method provides process steps to define the transistor channel length and recess silicon pillars used to form the vertical-surrounding gate field effect transistor structure for use in ... ### FreshPatents.com Support |