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Semiconductor Device Manufacturing: Process > Making Regenerative-type Switching Device (e.g., Scr, Igbt, Thyristor, Etc.) > Having Field Effect Structure Having Field Effect StructureHaving Field Effect Structure patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077689 - Complimentary lateral iii-nitride transistors A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device. ... 11/10/05 - 20050250257 - Method of forming a super-junction semiconductor device In one embodiment, a transistor is formed to have alternating depletion and conduction regions that are formed by doping the depletion and conduction regions through an opening in a substrate of the transistor. ... 09/01/05 - 20050191794 - Method for forming a trench mosfet having self-aligned features A semiconductor device is formed as follows. A plurality of trenches is formed in a silicon layer. An insulating layer filling an upper portion of each trench is formed. Exposed silicon is removed from adjacent the trenches to expose an edge of the insulating layer in each trench, such that ... ### FreshPatents.com Support |