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Semiconductor Device Manufacturing: Process > Making Regenerative-type Switching Device (e.g., Scr, Igbt, Thyristor, Etc.) Making Regenerative-type Switching Device (e.g., Scr, Igbt, Thyristor, Etc.)Making Regenerative-type Switching Device (e.g., Scr, Igbt, Thyristor, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/01/07 - 20070026577 - High voltage non punch through igbt for switch mode power supplies A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom formed by a light species atom implant to a depth of less ... 09/14/06 - 20060205122 - Method for fabricating a field stop zone In a method for fabricating a field stop zone in a semiconductor body of a semiconductor component. According to the method, the semiconductor body is irradiated with protons, and the irradiated semiconductor body is subjected to a heat treatment process. Prior to the irradiation process, the semiconductor body is subjected ... 09/07/06 - 20060199312 - Method of manufacturing a vertical junction field effect transistor having an epitaxial gate A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial ... 03/09/06 - 20060051902 - Method for manufacturing power diode and equipment for the same A method and equipment for manufacturing a power diode are described. More particularly, a manufacturing method and a unit of equipment used to remove an exposed portion of a P-N junction of a semiconductor (especially for power diodes) are described. The equipment has a reaction vessel having an input outlet ... 07/07/05 - 20050148118 - Horizontal tram and method for the fabrication thereof A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a trench therein. A thyristor is formed around the trench and within the semiconductor substrate. The thyristor has at least four layers with three P-N junctions therebetween. A gate for the thyristor is formed within ... ### FreshPatents.com Support |