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Semiconductor Device Manufacturing: Process > Making Device Array And Selectively Interconnecting > Using Structure Alterable To Nonconductive State (i.e., Fuse) Using Structure Alterable To Nonconductive State (i.e., Fuse)Using Structure Alterable To Nonconductive State (i.e., Fuse) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/28/06 - 20060292755 - Tunable antifuse element and method of manufacture A tunable antifuse element (102, 202, 204, 504, 952) and method of fabricating the tunable antifuse element, including a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer ... 11/23/06 - 20060263947 - Methods of forming fusible devices The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer ... 10/05/06 - 20060223242 - Method of forming a crack stop void in a low-k dielectric layer between adjacent fusees A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The crack stop void is formed simultaneously with the formation of an interconnect structure. ... 09/07/06 - 20060199311 - Antifuse having tantalum oxynitride film and method for making same A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride ... 08/24/06 - 20060189042 - Semiconductor chip and method of fabricating the same There is provided a semiconductor chip having fuses. The semiconductor chip includes fuses each having a first terminal electrically connected to a first logic circuit, a second terminal electrically connected to a second logic circuit, and a blowable region formed between the first terminal and the second terminal; and fuse ... 06/29/06 - 20060141681 - Processing a memory link with a set of at least two laser pulses A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within ... 06/29/06 - 20060141680 - Processing a memory link with a set of at least two laser pulses A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within ... 06/22/06 - 20060134839 - Low voltage non-volatile memory transistor A p-channel non-volatile memory (NVM) transistor is programmed by shifting the threshold voltage of the transistor. The threshold voltage is shifted by introducing a programming current to the gate electrode of the transistor, and simultaneously introducing a negative bias to the transistor. The threshold voltage of the p-channel NVM transistor ... 06/22/06 - 20060134838 - Processing a memory link with a set of at least two laser pulses A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within ... 06/15/06 - 20060128073 - Multiple-wavelength laser micromachining of semiconductor devices A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size. ... 04/06/06 - 20060073642 - Method for manufacturing a multiple-bit-per-cell memory A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer ... 03/02/06 - 20060046354 - Recessed gate dielectric antifuse A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the ... 02/09/06 - 20060030083 - Semiconductor device and fabricating method thereof A semiconductor device comprising a substrate with an integrated circuit structure and a patterned metallic layer thereon is provided. The patterned metallic layer includes a first pattern and a second pattern. The first pattern has a thickness different from the second pattern. Since the first pattern and the second pattern ... 02/09/06 - 20060030082 - Semiconductor device and fabricating method thereof A semiconductor device comprising a substrate with an integrated circuit structure and a patterned metallic layer thereon is provided. The patterned metallic layer includes a first pattern and a second pattern. The first pattern has a thickness different from the second pattern. Since the first pattern and the second pattern ... 12/15/05 - 20050277232 - Diode junction poly fuse System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, ... 11/10/05 - 20050250256 - Semiconductor device and fabricating method thereof A semiconductor device comprising a substrate with an integrated circuit structure and a patterned metallic layer thereon is provided. The patterned metallic layer includes a first pattern and a second pattern. The first pattern has a thickness different from the second pattern. Since the first pattern and the second pattern ... 10/06/05 - 20050221540 - Use of dar coating to modulate the efficiency of laser fuse blows The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer ... 10/06/05 - 20050221539 - Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. ... 09/08/05 - 20050196909 - Method and circuit for adjusting a resistance in an integrated circuit The invention relates to a method for adjusting a resistance in an integrated circuit, the resistance having a first conductive area and a second conductive area between which a dielectric area is arranged, a programming current being conducted through the resistance, the programming current being selected so as to adjust ... 08/18/05 - 20050181546 - Methods for fabricating fuse programmable three dimensional integrated circuits A method of fabricating a field programmable integrated circuit comprised of: constructing a semiconductor device comprising a fuse circuit to customize the logic content of a programmable logic circuit; and attaching said semiconductor device in a detachable lid package, wherein the fuses are customized in the field by detaching the ... 07/28/05 - 20050164430 - Semiconductor device having a fuse A fuse used for redundancy function in a semiconductor device includes a pair of fuse terminals formed as a common layer with top interconnect lines by using a damascene technique, and a fuse element made of refractive metal and bridging the fuse terminals. The fuse element is formed as a ... 07/21/05 - 20050158919 - Semiconductor fuses and semiconductor devices containing the same A fuse for use in a semiconductor device includes spaced-apart terminals with at least two layers of conductive material and a single-layer conductive link joining the spaced-apart terminals and including a single layer of conductive material. A first, lower layer of the terminals of each fuse may be formed from ... 06/30/05 - 20050142699 - Method and structure for electrostatic discharge protection of photomasks A mask for manufacturing integrated circuits and use of the mask. The mask has a mask substrate. The mask also has an active mask region within a first portion of the mask substrate. The active region is adapted to accumulate a pre-determined level of static electricity. The mask also has ... 06/09/05 - 20050124097 - Integrated circuit with two phase fuse material and method of using and making same A method of programming a fuse utilizes a fuse including a material having a first phase and a second phase. The first phase has a different resistivity than the second phase. The method includes providing a current or voltage to the fuse and changing the material from the first phase ... ### FreshPatents.com Support |