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Semiconductor Device Manufacturing: Process > Having Diamond Semiconductor Component Having Diamond Semiconductor ComponentHaving Diamond Semiconductor Component patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082427 - Method for manufacturing a compound semiconductor device having an improved via hole In a method for manufacturing a compound semiconductor device, a principal surface of a SiC wafer, on which a compound semiconductor device is located, is bonded to a support substrate with an adhesive having a softening point higher than 200° C. A via hole is formed dry etching, including supplying ... 01/11/07 - 20070010044 - Method for sensor edge and mask height control for narrow track width devices A process for defining and controlling the mask height of sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are used to form the mask structure. ... 01/11/07 - 20070010043 - Method for sensor edge control and track width definition for narrow track width devices A process for defining and controlling the track width for sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are used to form the mask structure. ... 11/30/06 - 20060270103 - Methods of fabricating silicon carbide devices having smooth channels Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well ... 10/19/06 - 20060234419 - Diamond medical devices Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface ... 08/10/06 - 20060177962 - Process for producing n-type semiconductor diamond and n-type semiconductor diamond A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li ... 04/20/06 - 20060084197 - Wafer-level diamond spreader An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of ... 03/02/06 - 20060046345 - Method for fabricating a silicon carbide interconnect for semiconductor components using heating and oxidizing An interconnect for semiconductor components includes a substrate, and interconnect contacts on the substrate for electrically engaging component contacts on the components. The interconnect contacts include silicon carbide conductive layers, and conductors in electrical communication with the silicon carbide conductive layers. The silicon carbide conductive layers provides a wear resistant ... 12/15/05 - 20050277224 - Base material for forming diamond film and diamond film There is disclosed a base material for forming a diamond film by vapor phase synthesis, wherein diamond particles having a particle diameter of 2 nm to 100 nm exist at a density of 1 ×108 to 1 ×1013 number/cm2 on a surface of the base material, and spaces among the ... 12/01/05 - 20050266606 - Method of producing an n-type diamond with high electrical conductivity The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the donor species, at a temperature that ... 08/18/05 - 20050181536 - Method of manufacturing silicon carbide semiconductor device Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms thereof is dissolved, since the inter-band scattering is prevented from ... 06/16/05 - 20050130341 - Selective synthesis of semiconducting carbon nanotubes Methods for selecting semiconducting carbon nanotubes from a random collection of conducting and semiconducting carbon nanotubes synthesized on multiple synthesis sites carried by a substrate and structures formed thereby. After an initial growth stage, synthesis sites bearing conducting carbon nanotubes are altered to discontinue synthesis at these specific synthesis sites ... 06/02/05 - 20050118746 - Minimizing degradation of sic bipolar semiconductor devices A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of ... ### FreshPatents.com Support |