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Semiconductor Device Manufacturing: Process > Having Metal Oxide Or Copper Sulfide Compound Semiconductor Component Having Metal Oxide Or Copper Sulfide Compound Semiconductor ComponentHaving Metal Oxide Or Copper Sulfide Compound Semiconductor Component patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054437 - Optical element and its manufacturing method An optical element includes a substrate, a surface-emitting type semiconductor laser that emits laser light in a direction vertical to a surface of the substrate, and a light-receiving element formed above or below the surface-emitting type semiconductor laser provided above the substrate. The optical element includes a first insulation layer ... 02/22/07 - 20070042526 - Metal oxide solid solution, preparation and use thereof Disclosed is a method for preparing a metal oxide solid solution in nano size. The metal oxide solid solution is prepared by reacting a reactant mixture containing water and at least two water-soluble metal compounds at 200 to 700° C. under a pressure of 180 to 550 bar in a ... 12/07/06 - 20060275948 - Process for forming zinc oxide film A process for forming zinc oxide film over a surface of a substrate which comprises a step of vaporising and supplying a materilal prepared by dissolving dimethylzinc or diethylzinc into an organic solvent to a chemical vapor deposition apparatus and a step of simultaneously supplying a gas comprising an oxidizing ... 10/05/06 - 20060223223 - Method of production of circuit board utilizing electroplating A method of production of a circuit board utilizing electroplating which prevents signal reflection and noise due to unnecessary parts in the circuit patterns when electroplating to form circuit patterns on the board to thereby improve the electrical properties and realize higher density layout of the circuit patterns, including the ... 04/27/06 - 20060088952 - Method and system for focused ion beam directed self-assembly of metal oxide island structures A process for guiding the growth of metal oxide islands of material which involves: presenting a metal oxide surface to a charged particle beam; impinging the metal oxide surface with ions from the charged particle beam; presenting said metal oxide surface to a deposition chamber; coating said surface with vapor ... 02/16/06 - 20060035405 - Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same The present invention can provide methods of manufacturing a thin film including hafnium titanium oxide. The methods can include introducing a first reactant including a hafnium precursor onto a substrate; chemisorbing a first portion of the first reactant to the substrate, and physisorbing a second portion of the first reactant ... 11/17/05 - 20050255629 - Biomimetic approach to low-cost fabrication of complex nanostructures of metal oxides by natural oxidation at low-temperature A metal oxide nanostructure is formed by oxidizing metallic metal in the presence of a solution containing a liquid ligand to form a metal-ligand complex, and decomposing the metal-ligand complex to form the metal oxide nanostructure. The metal-ligand complex can be a complex of zinc or copper with formamide. In ... 09/08/05 - 20050196896 - Micromirror array device Disclosed herein is a micromirror array device that comprises an array of reflective deflectable mirror plates each being associated with one single addressing electrode to be deflected to an ON state angle. A light transmissive electrode is disposed proximate to the mirror plates for deflecting the mirror plates to a ... 08/04/05 - 20050170554 - Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical connection with each end of the ... ### FreshPatents.com Support |