REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Having Selenium Or Tellurium Elemental Semiconductor Component Having Selenium Or Tellurium Elemental Semiconductor ComponentHaving Selenium Or Tellurium Elemental Semiconductor Component patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/15/07 - 20070037316 - Memory cell contact using spacers A method of forming contacts used in a memory device. The method involves forming a via in an insulating layer, forming spacers on sidewalls of the via, and filling the via with a conductive material. The resulting contact has rounded upper corners to improve the reliability of the memory device. ... 02/08/07 - 20070031991 - Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition The invention relates to a method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition and a first mixture comprising at least one carrier gas and at least one organometallic compound as well as a second mixture comprising at least one carrier gas and at least ... 02/01/07 - 20070026566 - Phase change memory with damascene memory element A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may ... 12/21/06 - 20060286709 - Manufacturing methods for thin film fuse phase change ram A method for manufacturing a memory device comprises forming an electrode layer on a substrate which comprises circuitry made using front-end-of-line procedures. The electrode layer includes a first electrode and a second electrode, and an insulating member between the first and second electrodes for each phase change memory cell to ... 12/14/06 - 20060281218 - Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be driven by a CMOS steering element. ... 12/14/06 - 20060281217 - Methods for fabricating phase changeable memory devices Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have ... 12/14/06 - 20060281216 - Method of manufacturing a phase change ram device utilizing reduced phase change current To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed on the metal pads. Nano-sized copolymer patterns aligned with the metal pads covered by the ... 11/30/06 - 20060270102 - Phase change ram device and method for fabricating the same A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolation layer formed so as to define a ... 11/09/06 - 20060252176 - Memory element and its method of formation A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, ... 09/14/06 - 20060205110 - Method for manufacturing an electrolyte material layer in semiconductor memory devices A method for manufacturing an electrolyte material layer with a chalcogenide material incorporated or deposited therein for use in semiconductor memory devices, in particular resistively-switching memory devices or components. The method comprises the steps of producing a semiconductor substrate, depositing a binary chalcogenide layer onto the semiconductor substrate, depositing a ... 05/04/06 - 20060094154 - Common word line edge contact phase-change memory A method of fabricating a phase-change memory cell is described. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a first dimension of a bottom electrode and a second dimension controlled by an etch process. The contact area is a product of ... 04/20/06 - 20060084196 - Method for regeneration of an electrolysis bath for the production of a compound i-iii-vi sb in thin layers The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in ... 04/06/06 - 20060073631 - Phase change memory with damascene memory element A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may ... 02/09/06 - 20060030068 - Fabrication method for phase change diode memory cells A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer ... 01/05/06 - 20060003489 - One mask pt/pcmo/pt stack etching process for rram applications A one-mask etching method for use with a PCMO-containing RRAM to reduce stack side-wall residuals, includes preparing a substrate, taken from the group of substrates consisting of silicon, silicon dioxide and polysilicon; depositing a bottom electrode on the substrate; depositing a PCMO layer on the bottom electrode; depositing a top ... 12/29/05 - 20050287698 - Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices A method of forming a metal chalcogenide. A metal is provided and exposed to a chalcogen plasma to form the metal chalcogenide. ... 09/22/05 - 20050208699 - Phase change memory cell on silicon-on insulator substrate The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase ... 09/15/05 - 20050202589 - Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes ... 09/15/05 - 20050202588 - Method of forming a chalcogenide material containing device Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed over a substrate. The stack includes a layer of chalcogenide material and a metal, e.g., silver, containing layer. A protective layer ... ### FreshPatents.com Support |