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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Responsive To Nonelectrical Signal > Responsive To Electromagnetic Radiation > Compound Semiconductor > Chalcogen (i.e., Oxygen (o), Sulfur (s), Selenium (se), Tellurium (te)) Containing Chalcogen (i.e., Oxygen (o), Sulfur (s), Selenium (se), Tellurium (te)) ContainingChalcogen (i.e., Oxygen (o), Sulfur (s), Selenium (se), Tellurium (te)) Containing patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072334 - Semiconductor fabrication process employing spacer defined vias A semiconductor fabrication process includes forming a first etch mask (131) that defines a first opening (132) and a second etch mask (140) that defines a second opening (142) overlying an interlevel dielectric (ILD) (108). The ILD (108) is etched to form a first via (154) defined by the first ... 01/25/07 - 20070020797 - Self-aligned process for manufacturing phase change memory cells A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the heater element and the phase change storage region ... 01/04/07 - 20070004078 - Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films This invention relates to a method for producing group IB-IIA-VIA quaternary or higher alloy semiconductor films wherein the method comprises the steps of (i) providing a metal film comprising a mixture of group IB and group IIIA metals; (ii) heat treating the metal film in the presence of a source ... 11/30/06 - 20060270099 - Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry A first conductive electrode material is formed on a substrate. Chalcogenide comprising material is formed thereover. The chalcogenide material comprises AxSey. A silver comprising layer is formed over the chalcogenide material. The silver is irradiated effective to break a chalcogenide bond of the chalcogenide material at an interface of the ... 09/21/06 - 20060211165 - Methods for forming phase-change memory devices Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration. ... 09/14/06 - 20060205108 - Method for making tapered opening for programmable resistance memory element A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide. ... 07/06/06 - 20060148125 - Phase changable memory device structures A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole ... 05/25/06 - 20060110846 - Electrically programmable memory element with improved contacts A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer. ... 03/23/06 - 20060063297 - Reducing leakage currents in memories with phase-change material A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less ... 02/16/06 - 20060035403 - Pcram device with switching glass layer A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method. ... 01/26/06 - 20060019427 - One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection A method of homogeneously forming metal chalcogenide nanocrystals includes the steps combining a metal source, a chalcogenide source, and at least one solvent at a first temperature to form a liquid comprising assembly, and heating the assembly at a sufficient temperature to initiate nucleation to form a plurality of metal ... ### FreshPatents.com Support |