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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Responsive To Nonelectrical Signal > Physical Stress Responsive > Having Cantilever Element Having Cantilever ElementHaving Cantilever Element patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087465 - Micromechanical component having an anodically bonded cap and a manufacturing method A micromechanical component includes a cap wafer made up of at least a first silicon substrate and a thin glass substrate, and having a functional wafer made up of at least a second silicon substrate, at least one electrical contact surface being disposed on the functional wafer. The cap wafer ... 04/12/07 - 20070082422 - Method of fabricating suspended beam in a mems process A method of fabricating a suspended beam in a MEMS process, said method comprising the steps of: (a) etching a pit in a substrate, said pit having a base and sidewalls; (b) depositing sacrificial material on a surface of said substrate so as to fill said pit; (c) removing said ... 02/22/07 - 20070042524 - Mems devices having support structures with substantially vertical sidewalls and methods for fabricating the same Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the ... 01/18/07 - 20070015304 - Low compressive tinx, materials and methods of making the same Disclosed herein is a microelectromechanical device having a structural layer composed of a low stress TiNx layer and a method of making the same. ... 12/21/06 - 20060286707 - Substrate contact for a capped mems and method of making the substrate contact at the wafer level A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and ... 12/14/06 - 20060281214 - Method of making a soi silicon structure A process for making a microelectromechanical device having a moveable component defined by a gap pattern in a semiconductor layer of a silicon-on-insulator wafer involves the use of a plurality of deep reactive ion etching steps at various etch depths that are used to allow a buried oxide layer of ... 09/14/06 - 20060205106 - Integrated micro electro-mechanical system and manufacturing method thereof In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a ... 09/07/06 - 20060199297 - Mems device package and method of manufacturing the same A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the ... 06/22/06 - 20060134821 - Manufacturing method of a microelectromechanical switch The method for manufacturing a micromechanical switch includes manufacturing a hanging bar, on a first semiconductor substrate, equipped at an end thereof with a contact electrode, and a frame projecting from the first semiconductor substrate. A second semiconductor substrate with conductive tracks includes a second input/output electrode and a third ... 05/25/06 - 20060110843 - Method of manufacturing an external force detection sensor A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole dry etching of an element substrate, and an electrically conductive material is used as an etching stop layer during the dry etching. ... 04/06/06 - 20060073627 - Probe for a scanning probe microscope and method for fabricating same A method for fabricating a probe for a scanning probe microscope, wherein the probe includes a mounting block, a cantilever and a tip, includes the steps of: forming a first mask to define a pattern for the tip and a second mask to define a pattern for the cantilever on ... 01/26/06 - 20060019421 - Semiconductor mechanical sensor A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface ... 01/05/06 - 20060003482 - Elastomeric cmos based micro electromechanical varactor A micro electro-mechanical system (MEMS) variable capacitor is described, wherein movable comb electrodes of opposing polarity are fabricated simultaneously on the same substrate and are independently actuated. The electrodes are formed in an interdigitated fashion to maximize capacitance. The MEMS variable capacitor includes CMOS manufacturing steps in combination with elastomeric ... 12/01/05 - 20050266599 - Method of manufacturing a micro-electrical-mechanical system Micro-electrical-mechanical systems are fabricated in a substrate having a sacrificial layer sandwiched between two semiconductor layers. The semiconductor layers are selectively etched to create non-etched frames and etched microstructures immobilized within the frames by the sacrificial layer. An adhesive sheet is attached to one surface of the substrate, and the ... 11/24/05 - 20050260784 - Surface mems mirrors with oxide spacers An MEMS mirror structure is formed using an etching process that forms sidewall oxide spacers while maintaining the integrity of the oxide layer formed over the reflective layer of the MEMS mirror structure. The discrete mirror structure is formed to include a reflective layer sandwiched between oxide layers and with ... 09/08/05 - 20050196891 - Providing a charge dissipation structure for an electrostatically driven device In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the ... 06/23/05 - 20050136565 - Fabrication of movable micromechanical components employing low-cost, high-resolution replication technology method A method of fabricating a high-aspect ratio micro-mechanical device or system with dimensions that can vary from nanometers to millimeters is disclosed. According to the method, a tool master with a high-aspect ratio, submicron lateral resolution and vertical dimensions substantially corresponding to the vertical dimensions of the device or system ... 06/16/05 - 20050130339 - Protected switch and techniques to manufacture the same Briefly, micromechanical system (MEMS) switches that utilize protective layers to protect electrical contact points. ... 06/09/05 - 20050124089 - Method of forming a seal for a semiconductor device In one embodiment, a reflowable layer 51 is deposited over a semiconductor device 10 and reflowed in an environment having a pressure approximately equal to that of atmosphere to form a seal layer 52. The seal layer 52 seals all openings 43 in the underlying layer of the semiconductor device ... ### FreshPatents.com Support |