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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Responsive To Nonelectrical Signal > Physical Stress Responsive Physical Stress ResponsivePhysical Stress Responsive patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087464 - Method for producing etched holes and/or etched trenches as well as a diaphragm sensor unit A method for producing etched holes and/or etched trenches of components based on silicon and/or a layered silicon/insulator structure. A germanium-containing layer and/or a germanium layer is provided at the point in the etching direction at which or in whose surroundings an etching procedure is to be completed. Germanium and/or ... 04/12/07 - 20070082421 - Miniature silicon condenser microphone A silicon condenser microphone package includes a transducer unit, a substrate, and a cover. The substrate includes an upper surface transducer unit is attached to the upper surface of the substrate and overlaps at least a portion of the recess wherein a back volume of the transducer unit is formed ... 04/05/07 - 20070077675 - Electronic component packaging the conveyance of part of this material by electro-migration into the hole (6) to form a plug (20). ... 03/29/07 - 20070072329 - Method and apparatus for manufacturing a display apparatus A light-shielding layer is formed and patterned on a front substrate that is opposed to a back substrate and on which a number of electron-emitting elements are arranged. A phosphor layer is formed and patterned on the part on which the light-shielding layer is not provided. A metal back layer ... 03/29/07 - 20070072328 - Method and system for hermetically sealing packages for optics A system for hermetically sealing devices. The system includes a substrate, which includes a plurality of individual chips. Each of the chips includes a plurality of devices and each of the chips are arranged in a spatial manner as a first array. The system also includes a transparent member of ... 03/29/07 - 20070072327 - Method of forming an integrated mems resonator A method of producing an integrated MEMS resonator includes providing a substrate including single crystal silicon and partially forming a resonator in a first portion of the substrate, the resonator having a resonating element formed by the substrate and an electrode, the resonating element and the electrode forming a variable ... 03/22/07 - 20070065967 - Micromachined structures using collimated drie A method of making an etch structure in a substrate involves the steps of providing a mask on a substrate with a pattern that leaves at least one opening leaving the substrate in direct contact with the ambient, performing an isotropic or quasi-isotropic etch through a mask to create a ... 03/22/07 - 20070065966 - Process for single and multiple level metal-insulator-metal integration with a single mask Method of fabricating a MIM capacitor and MIM capacitor. The method includes providing a substrate including a dielectric layer formed on a first conductive layer and a second conductive layer formed over the dielectric layer, and patterning a mask on the second conductive layer. Exposed portions of the second conductive ... 03/15/07 - 20070059858 - Microfabricated capacitive ultrasonic transducer for high frequency applications The invention relates to an electro-acoustic transducer, particularly an ultrasonic transducer, comprising a plurality of electrostatic micro-cells of the cMUT type. The electrostatic micro-cells are arranged in homogeneous groups of micro-cells having the same geometrical characteristics. The micro-cells of each group have geometries different from the geometry of the micro-cells ... 03/15/07 - 20070059857 - Three-axis accelerometer The invention comprises a method of fabricating a three-axis accelerometer. A first wafer having a first and a second major surface provided with etching at least two cavities in the first major surface of the first wafer and patterning metal onto the first major surface of the first wafer to ... 02/15/07 - 20070037310 - Semiconductor sensor production method and semiconductor sensor A semiconductor sensor production method includes the steps of (A) forming a first etching mask layer on a support part segment of a backside semiconductor layer, except on a portion of the support part segment which portion is along edges of the support part segment; (B) forming a second etching ... 02/01/07 - 20070026561 - Method of manufacturing piezoelectric element and method of manufacturing liquid-jet head While a piezoelectric element is being formed by sequentially laminating a lower electrode whose uppermost layer is made of iridium, a titanium layer, a piezoelectric layer and an upper electrode to each other on a substrate, the piezoelectric layer is formed, by an MOD method, on the titanium layer with ... 02/01/07 - 20070026560 - Method of producing semiconductor pressure sensor A method of producing a semiconductor pressure sensor, the sensor having a diaphragm to be deformed by pressure, including: a step of preparing a semiconductor substrate having front and rear surfaces, both of the surfaces being mirror surfaces; a thermally oxidizing step of forming a thermally-oxidized film on the rear ... 02/01/07 - 20070026559 - System and method for direct-bonding of substrates A method of forming a MEMS (Micro-Electro-Mechanical System), includes forming an ambient port through a MEMS cap which defines a cavity containing a plurality of MEMS actuators therein; and bonding a lid arrangement to the MEMS cap to hermetically seal the ambient port. ... 01/25/07 - 20070020794 - Method of strengthening a microscale chamber formed over a sacrificial layer A method for forming an improved chamber for a micro-electromechanical device includes depositing a sacrificial layer on a substrate; depositing a masking layer on a surface of the sacrificial layer; removing at least one predetermined portion of the masking layer down to the sacrificial layer to form an etch pattern; ... 01/18/07 - 20070015303 - Nanotube device structure and methods of fabrication Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; ... 12/21/06 - 20060286706 - Method of making a substrate contact for a capped mems at the package level Methods have been provided for forming a micro-electromechanical systems (“MEMS”) device (100) from a substrate (500) comprising a handle layer (108) and a cap (132) overlying the handle layer (108). In one exemplary embodiment, the method includes cutting through the substrate (500) to separate the substrate (500) into a first ... 11/16/06 - 20060258039 - Integrated getter area for wafer level encapsulated microelectromechanical systems There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area and/or an increased chamber volume, which causes little to no increase in overall ... 11/16/06 - 20060258038 - Piezoresistive sensing structure A technique for manufacturing a piezoresistive sensing structure includes a number of process steps. Initially, a piezoresistive element is implanted into a first side of an assembly that includes a semiconductor material. A passivation layer is then formed on the first side of the assembly over the element. The passivation ... 10/19/06 - 20060234413 - Method for forming anti-stiction bumps on a micro-electro mechanical structure A technique for forming anti-stiction bumps on a bottom surface of a micro-electro mechanical (MEM) structure includes a number of process steps. The MEM structure is fabricated from an assembly that includes a support substrate bonded to a single-crystal semiconductor layer, via an insulator layer. A plurality of holes are ... 10/12/06 - 20060228824 - Anodic bonding apparatus, anodic bonding method, and method of producing acceleration sensor An anodic bonding apparatus includes a first electrode and a second electrode. The first electrode has a first surface, and the second electrode has a second surface facing the first surface. The first surface includes a first central area; a first substrate placing area for placing a laminated substrate; and ... 10/12/06 - 20060228823 - Mems structure with anodically bonded silicon-on-insulator substrate A silicon-on-insulator (SOI) substrate is anodically bonded to a glass substrate in a MEMS structure with or without electrically bypassing the insulator layer by electrically comprising the silicon layers. The insulator layer serves as an etch stop to create a well-defined, thin silicon membrane for a sensor. A second glass ... 10/05/06 - 20060223215 - Method for making a microelectromechanical systems (mems) device including a superlattice A method for making a microelectromechanical system (MEMS) device may include providing a substrate, and forming at least one movable member supported by the substrate. The at least one movable member may include a superlattice including a plurality of stacked groups of layers with each group of layers of the ... 09/28/06 - 20060216849 - Substrate for stressed systems and method of making same A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. ... 09/28/06 - 20060216848 - Mechanical quantity measuring apparatus A semiconductor mechanical quantity measuring apparatus in which the reverse surface of a strain-detecting semiconductor element is bonded to an object of measurement, and a member having a small elastic modulus is interposed between the wiring board for supporting the strain-detecting semiconductor element and the strain-detecting semiconductor element. It then ... 09/28/06 - 20060216847 - Process for fabricating micromachine A method for manufacturing a micromachine is provided which can remove a sacrifice layer and can perform sealing without using a specific packaging technique. In a method for manufacturing a micromachine (1) including an oscillator (4), a step of forming a sacrifice layer around a movable portion of the oscillator ... 09/21/06 - 20060211163 - Anhydrous hf release of process for mems devices A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performing an in-situ vacuum evaporation of etch by-products at ... 09/21/06 - 20060211162 - Crystal-structure-processed devices, methods and systems for making Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a selected material whose internal crystalline structure becomes appropriately changed thereby to establish the desired mechanical properties for a created device. ... 09/14/06 - 20060205105 - Electronic device and it's manufacturing method A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and ... 08/24/06 - 20060189022 - Mems heat pumps for integrated circuit heat dissipation A cooling mechanism within an integrated circuit includes an internal pump for circulating thermally conductive fluid within closed loop channels. The cooling channels are embedded within an integrated circuit die, such as in interlevel dielectric layers between metal levels. The channels are formed by engineering deposition of a layer to ... 08/10/06 - 20060177956 - Method of manufacturing a hermetic chamber with electrical feedthroughs A method of manufacturing a hermetically-sealed chamber with an electrical feedthrough includes the step of hermetically fixing an electrode to a substrate in a predetermined location on the substrate. A passage is formed through the substrate through the predetermined location such that at least a portion of the electrode is ... 07/20/06 - 20060160263 - Method for manufacturing pressure sensor A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film ... 06/29/06 - 20060141658 - Corrugated diaphragm A diaphragm includes a substrate having a hole and a sheet of material formed on the substrate and covering the hole. The sheet of material includes one or more corrugations that are substantially free of defects. A method of forming the diaphragm includes forming a corrugated surface free of stringers ... 06/15/06 - 20060128048 - Pyramid socket suspension An apparatus and method for flexibly suspending a sensing mechanism between a pair of cover plates, including a sensing mechanism formed in a crystalline silicon substrate; a pair of cover plates formed in crystalline silicon substrates; a first plurality of complementary interfaces in fixed relation between the sensing mechanism and ... 06/01/06 - 20060115920 - Semiconductor device having mems In a semiconductor device having a MEMS according to this invention, a plurality of units having movable portions for constituting a MEMS are monolithically mounted on a semiconductor substrate on which an integrated circuit including a driving circuit, sensor circuit, memory, and processor is formed. Each unit has a processor, ... 06/01/06 - 20060115919 - Method of making a microelectromechanical (mem) device using porous material as a sacrificial layer A method of making a microelectromechanical (MEM) device using a standard silicon wafer, rather than an SOI wafer, includes selectively implanting a dopant in regions of the standard wafer, to thereby form heavily doped regions therein. The heavily doped regions are then converted to porous silicon regions. An electrical isolation ... 03/16/06 - 20060057757 - Method of manufacturing semiconductor probe having resistive tip A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck ... 03/16/06 - 20060057756 - Surface shape recoginition sensor and method of producing the same A structure (113b) which includes an overhang and a support portion supporting substantially the center of the overhang, and in which the area of the support portion is smaller than the area of the overhang in the two-dimensional direction of an upper electrode (110b) is formed on the upper electrode ... 01/12/06 - 20060008936 - Method for manufacturing semiconductor physical quantity sensor A method for manufacturing a semiconductor physical quantity sensor is provided. The sensor includes a multi-layered substrate, a cavity, a groove, a movable portion and a fixed portion. The multi-layered substrate includes a support substrate, an embedded insulation film, and a semiconductor layer. The method includes the steps of: preparing ... 01/12/06 - 20060008935 - Physical quantity sensor and method for manufacturing the same A physical quantity sensor includes: a semiconductor substrate; a cavity disposed in the substrate and extending in a horizontal direction of the substrate; a groove disposed on the substrate and reaching the cavity; a movable portion separated by the cavity and the groove so that the movable portion is movably ... 12/15/05 - 20050277219 - Sensor design and process An accelerometer (305) for measuring seismic data. The accelerometer (305) includes an integrated vent hole for use during a vacuum sealing process and a balanced metal pattern for reducing cap wafer bowing. The accelerometer (305) also includes a top cap press frame recess (405) and a bottom cap press frame ... 12/01/05 - 20050266598 - Method for fabricating vertical offset structure A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing ... 11/24/05 - 20050260782 - Conductive etch stop for etching a sacrificial layer In one embodiment, a micro device is formed by depositing a sacrificial layer over a metallic electrode, forming a moveable structure over the sacrificial layer, and then etching the sacrificial layer with a noble gas fluoride. Because the metallic electrode is comprised of a metallic material that also serves as ... 11/10/05 - 20050250237 - Microstructured component and a method for producing a microstructured component A microstructured component includes at least: one chip having a microstructured area and a surface area, on which a nanostructured, self-organized coating is applied. The nanostructured, self-organized coating may be used as an antistick coating for repelling moisture or a surrounding molding material. Moreover, when using flip-chip and stack-chip technologies, ... 10/20/05 - 20050233492 - Method of fabricating silicon-based mems devices A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure ... 10/06/05 - 20050221528 - Microelectronic mechanical system and methods The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in ... 09/15/05 - 20050202585 - Micro-machined electromechanical system (mems) accelerometer device having arcuately shaped flexures A method for suspending a movable structure form a support structure wherein first and second flat and thin arcuately shaped flexures are formed having spaced apart substantially planar and parallel opposing surfaces, each of the first and second flexures being structured for connection between a support structure and a movable ... 08/18/05 - 20050181529 - Method for manufacturing a semiconductor component, as well as a semiconductor component, in particular a membrane sensor A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective ... ### FreshPatents.com Support |